N Channel MOSFET Siliup SP60N55T2 60V 3.5A Continuous Drain Current with Low RDSon in SOT 23 Package
Key Attributes
Model Number:
SP60N55T2
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
3.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
55mΩ@10V;70mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Reverse Transfer Capacitance (Crss@Vds):
17pF
Number:
1 N-channel
Output Capacitance(Coss):
90pF
Pd - Power Dissipation:
1.2W
Input Capacitance(Ciss):
330pF
Gate Charge(Qg):
8.6nC@10V
Mfr. Part #:
SP60N55T2
Package:
SOT-23
Product Description
Product Overview
The SP60N55T2 is a 60V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high power and current handling. It features a surface mount SOT-23 package and is suitable for applications such as battery switches and DC/DC converters. With a typical RDS(on) of 55m at 10V and 70m at 4.5V, and a continuous drain current of 3.5A, this MOSFET offers efficient performance.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: N-Channel MOSFET
- Package Type: SOT-23
- Device Code: 60N55
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 60 | V | |||
| Static Drain-Source On-Resistance | RDS(on) | VGS=10V | 55 | 80 | m | |
| Static Drain-Source On-Resistance | RDS(on) | VGS=4.5V | 70 | 100 | m | |
| Continuous Drain Current | ID | 3.5 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | 60 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current | ID | 3.5 | A | |||
| Pulse Drain Current | IDM | Tested | 14 | A | ||
| Power Dissipation | PD | 1.2 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 104 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 60 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=48V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 1 | 1.6 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID =3A | - | 55 | 80 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID =2A | - | 70 | 100 | m |
| Input Capacitance | Ciss | VDS=30V , VGS=0V , f=1MHz | - | 330 | - | pF |
| Output Capacitance | Coss | - | 90 | - | ||
| Reverse Transfer Capacitance | Crss | - | 17 | - | ||
| Total Gate Charge | Qg | VDS=30V , VGS=10V , ID=3A | - | 8.6 | - | nC |
| Gate-Source Charge | Qgs | - | 1.3 | - | ||
| Gate-Drain Charge | Qgd | - | 2.7 | - | ||
| Turn-On Delay Time | td(on) | VDD=30V VGS=10V , RG=1, ID=1.5A | - | 4.5 | - | nS |
| Turn-On Rise Time | tr | - | 11 | - | ||
| Turn-Off Delay Time | td(off) | - | 13.5 | - | ||
| Turn-Off Fall Time | tf | - | 1.2 | - | ||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Package Information (SOT-23) | ||||||
| Symbol | Dimensions (mm) | Min. | Max. | |||
| A | 0.90 | 1.15 | ||||
| A1 | 0.00 | 0.10 | ||||
| A2 | 0.90 | 1.05 | ||||
| b | 0.30 | 0.50 | ||||
| c | 0.08 | 0.15 | ||||
| D | 2.80 | 3.00 | ||||
| E | 1.20 | 1.40 | ||||
| E1 | 2.25 | 2.55 | ||||
| e | 0.95 REF. | |||||
| e1 | 1.80 | 2.00 | ||||
| L | 0.55 REF. | |||||
| L1 | 0.30 | 0.50 | ||||
| 0 | 8 | |||||
2504101957_Siliup-SP60N55T2_C41354931.pdf
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