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quality NPN transistor Slkor MMBTA44 featuring 400V VCEO and 350mW power dissipation for general electronics factory
quality NPN transistor Slkor MMBTA44 featuring 400V VCEO and 350mW power dissipation for general electronics factory

NPN transistor Slkor MMBTA44 featuring 400V VCEO and 350mW power dissipation for general electronics

Key Attributes
Model Number: MMBTA44
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
DC Current Gain:
50@10mA,10V
Transition Frequency(fT):
50MHz
Number:
1 NPN
Type:
NPN
Vce Saturation(VCE(sat)):
750mV@50mA,5mA
Pd - Power Dissipation:
350mW
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
400V
Operating Temperature:
-
Mfr. Part #:
MMBTA44
Package:
SOT-23
Product Description

Product Overview

The MMBTA44 is a general-purpose NPN silicon transistor designed for high voltage applications. It features a high Collector-Emitter Voltage (VCEO) of 400V and a continuous Collector Current (Ic) of 200mA, with a Power Dissipation (Pc) of 350mW. This transistor is a complement to the MMBTA94 and is suitable for various electronic circuits requiring robust voltage handling capabilities.

Product Attributes

  • Brand: slkormicro (implied by website reference)
  • Complementary Part: MMBTA94
  • Package Type: SOT-23

Technical Specifications

Parameter Symbol Test Conditions Limit Unit
Collector-Base Voltage VCBO 400 V
Collector-Emitter Voltage VCEO 400 V
Emitter-Base Voltage VEBO 6 V
Collector Current - Continuous IC 0.2 A
Power Dissipation PC 0.35 W
Thermal Resistance Junction to Ambient RJA 357 /W
Junction Temperature TJ 150
Storage Temperature TSTG -55+150
Collector-Base Breakdown Voltage V(BR)CBO IC=100A, IE=0 400 V
Collector-Emitter Breakdown Voltage V(BR)CEO* IC=1mA, IB=0 400 V
Emitter-Base Breakdown Voltage V(BR)EBO IE=10A, IC=0 6 V
Collector Cut-off Current ICBO VCB=400V, IE=0 0.1 A
Emitter Cut-off Current IEBO VEB=4V, IC=0 0.1 A
DC Current Gain (hFE(1)) hFE VCE=10V, IC=1mA 40
DC Current Gain (hFE(2)) hFE VCE=10V, IC=10mA 50 - 200
DC Current Gain (hFE(3)) hFE VCE=10V, IC=50mA 45
DC Current Gain (hFE(4)) hFE VCE=10V, IC=100mA 40
Collector-Emitter Saturation Voltage (VCE(sat)1) VCE(sat) IC=1mA, IB=0.1mA 0.4 V
Collector-Emitter Saturation Voltage (VCE(sat)2) VCE(sat) IC=10mA, IB=1mA 0.5 V
Collector-Emitter Saturation Voltage (VCE(sat)3) VCE(sat) IC=50mA, IB=5mA 0.75 V
Base-Emitter Saturation Voltage VBE(sat) IC=10mA, IB=1mA 0.75 V
Collector Output Capacitance Cob VCB=20V, IE=0, f=1MHz 7 pF
Emitter Input Capacitance Cib VEB=0.5V, IC=0, f=1MHz 130 pF
Transition Frequency fT VCE=20V, IC=10mA, f=30MHz 50 MHz

2201201800_Slkor-MMBTA44_C2965519.pdf

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