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quality Medium Power Amplification and Switching Transistor Slkor MMBT4401 NPN Silicon Epitaxial Planar Type factory
quality Medium Power Amplification and Switching Transistor Slkor MMBT4401 NPN Silicon Epitaxial Planar Type factory

Medium Power Amplification and Switching Transistor Slkor MMBT4401 NPN Silicon Epitaxial Planar Type

Key Attributes
Model Number: MMBT4401
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Transition Frequency(fT):
250MHz
Vce Saturation(VCE(sat)):
750mV@500mA,50mA
Type:
NPN
Pd - Power Dissipation:
350mW
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
MMBT4401
Package:
SOT-23
Product Description

Product Overview

The MMBT4401 is an NPN silicon epitaxial planar transistor designed for medium power amplification and switching applications. Its epitaxial planar die construction ensures reliable performance. A complementary PNP type, the MMBT4403, is also available. This transistor is ideal for general-purpose and switching applications.

Product Attributes

  • Brand: slkormicro (implied by URL)
  • Type: NPN Silicon Epitaxial Planar Transistor
  • Package: SOT-23
  • Complementary Type: MMBT4403

Technical Specifications

Parameter Symbol Test Conditions Value Units
MAXIMUM RATING @ Ta=25
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6 V
Collector Current -Continuous IC 600 mA
Collector Power Dissipation PC 350 mW
Junction and Storage Temperature Tj,Tstg -55~150
ELECTRICAL CHARACTERISTICS @ Ta=25
Collector-base breakdown voltage V(BR)CBO IC=100A,IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 40 V
Emitter-base breakdown voltage V(BR)EBO IE=100A,IC=0 6 V
Collector cut-off current ICBO VCB=50V,IE=0 0.1 A
Collector cut-off current ICEO VCE=35V,IE=0 0.1 A
Emitter cut-off current IEBO VEB=5V,IC=0 0.1 A
DC current gain hFE VCE=1V,IC=0.1mA 20
VCE=1V,IC=1.0mA 40
VCE=1V,IC=10mA 80
VCE=1V,IC=150mA 100
VCE=2V,IC=500mA 40 300
Collector-emitter saturation voltage VCE(sat) IC=150mA, IB=15mA 0.4 V
IC=500mA, IB=50mA 0.75 V
Base-emitter saturation voltage VBE(sat) IC=150mA, IB=15mA 0.75 V
IC=500mA, IB=50mA 0.95 1.2
Transition frequency fT VCE=10V, IC= 20mA, f=100MHz 250 MHz
Collector output capacitance Cob VCB=5V,IE=0,f=1MHz 6.5 pF

Dimensions in inch (mm)

Model: MMBT4401


2401051154_Slkor-MMBT4401_C609802.pdf

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