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quality 150V N Channel Power MOSFET Siliup SP015N13GHNK with Low On Resistance and Advanced Trench Technology factory
quality 150V N Channel Power MOSFET Siliup SP015N13GHNK with Low On Resistance and Advanced Trench Technology factory

150V N Channel Power MOSFET Siliup SP015N13GHNK with Low On Resistance and Advanced Trench Technology

Key Attributes
Model Number: SP015N13GHNK
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+150℃
RDS(on):
13mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
22pF
Number:
1 N-channel
Output Capacitance(Coss):
293pF
Pd - Power Dissipation:
120W
Input Capacitance(Ciss):
2.23nF
Gate Charge(Qg):
30nC@10V
Mfr. Part #:
SP015N13GHNK
Package:
PDFN-8L(5x6)
Product Description

Product Overview

The SP015N13GHNK is a 150V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high-performance power switching applications. It features fast switching speeds, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for DC-DC converters and power management systems. It is supplied in a PDFN5X6-8L package.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP015N13GHNK
  • Technology: Advanced Split Gate Trench Technology
  • Package: PDFN5X6-8L
  • Channel Type: N-Channel

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Unit
Drain-Source Breakdown Voltage V(BR)DSS ID = 250A, VGS = 0V 150 - - V
Drain-Source ON Resistance RDS(on) VGS = 10V, ID = 20A - 13 16 m
Continuous Drain Current ID (Tc=25) - - 50 A
Continuous Drain Current ID (Tc=100) - - 35 A
Pulsed Drain Current IDM - - - 200 A
Single Pulse Avalanche Energy EAS - - - 306 mJ
Power Dissipation PD (Tc=25) - - 120 W
Thermal Resistance Junction-to-Case RJC - - 1.04 - /W
Gate-Source Voltage VGS - - - 20 V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 2.0 3.0 4.0 V
Input Capacitance Ciss VDS = 75V, VGS = 0V, f = 1.0MHz - 2230 - pF
Output Capacitance Coss - - 293 - pF
Reverse Transfer Capacitance Crss - - 22 - pF
Total Gate Charge Qg VDS=75V , VGS=10V , ID=20A - 30 - nC
Gate-Source Charge Qgs - - 5.8 - nC
Gate-Drain Charge Qg - - 7 - nC
Turn-On Delay Time td(on) VGS = 10V, VDS = 50V, ID = 20A, RG = 6 - 13 - nS
Rise Time tr - - 25 - nS
Turn-Off Delay Time td(off) - - 31 - nS
Fall Time tf - - 25 - nS
Source-Drain Diode Forward Voltage VSD IS = 1A, VGS = 0V - - 1.2 V
Maximum Body-Diode Continuous Current IS - - - 50 A
Body Diode Reverse Recovery Time Trr IS=20A, di/dt=100A/us, TJ=25 - 65 - nS
Body Diode Reverse Recovery Charge Qrr - - 180 - nC

Package Information (PDFN5X6-8L)

Symbol Dimensions In Millimeters Dimensions In Inches
Min. Max. Min. Max.
A 0.900 1.000 0.035 0.039
A3 0.254REF. 0.010REF.
D 4.944 5.096 0.195 0.201
E 5.974 6.126 0.235 0.241
D1 3.910 4.110 0.154 0.162
E1 3.375 3.575 0.133 0.141
D2 4.824 4.976 0.190 0.196
E2 5.674 5.826 0.223 0.229
k 1.190 1.390 0.047 0.055
b 0.350 0.450 0.014 0.018
e 1.270TYP. 0.050TYP.
L 0.559 0.711 0.022 0.028
L1 0.424 0.576 0.017 0.023
H 0.574 0.726 0.023 0.029
10 12 10 12

2504101957_Siliup-SP015N13GHNK_C22466810.pdf

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