surface mount MOSFET Siliup SP60N13GDP8 designed for DC DC converters and motor control applications

Key Attributes
Model Number: SP60N13GDP8
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
10A
RDS(on):
13.5mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.8V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
2 N-Channel
Output Capacitance(Coss):
235pF
Pd - Power Dissipation:
3.5W
Input Capacitance(Ciss):
940pF
Gate Charge(Qg):
15.9nC@10V
Mfr. Part #:
SP60N13GDP8
Package:
SOP-8L
Product Description

Product Overview

The SP60N13GDP8 is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for efficient power management. Featuring advanced Split Gate Trench Technology and a fast switching speed, this MOSFET is ideal for demanding applications such as DC-DC converters and motor control. It offers a low on-state resistance and is 100% tested for single pulse avalanche energy, ensuring reliability and performance in surface mount applications.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Technology: Advanced Split Gate Trench Technology
  • Package: SOP-8L
  • Testing: 100% Single Pulse avalanche energy Test

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Unit
Product Summary
Drain-Source Voltage V(BR)DSS 60 V
On-State Resistance RDS(on)TYP @10V 13.5 m
On-State Resistance RDS(on)TYP @4.5V 16.5 m
Continuous Drain Current ID 10 A
Absolute Maximum Ratings
Drain-Source Voltage VDSS 60 V
Gate-Source Voltage VGSS 20 V
Continuous Drain Current ID (Ta=25) 10 A
Continuous Drain Current ID (Ta=100C) 6 A
Pulse Drain Current IDM Tested 40 A
Single Pulse Avalanche Energy EAS 64 mJ
Power Dissipation PD 1.6 W
Thermal Resistance Junction-to-Ambient RJA 78.13 C/W
Storage Temperature Range TJ -55 150 C
Operating Junction Temperature Range TSTG -55 150 C
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250mA 60 - - V
Zero Gate Voltage Drain Current IDSS VDS=48V, VGS=0V - - 1 uA
Gate Leakage Current IGSS VGS=20V, VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VDS=VGS, ID=250uA 1 1.8 2.5 V
Drain-Source On-state Resistance RDS(ON) VGS=10V, ID=8A - 13.5 17 m
Drain-Source On-state Resistance RDS(ON) VGS=4.5V, ID=6A - 16.5 21 m
Dynamic Characteristics
Input Capacitance Ciss VGS=0V, VDS=30V,F=1MHz - 940 - pF
Output Capacitance Coss - 235 - pF
Reverse Transfer Capacitance Crss - 10 - pF
Total Gate Charge Qg VDS=30V, VGS=10V, ID=8A - 15.9 - nC
Gate-Source Charge Qgs - 2.8 - nC
Gate-Drain Charge Qg d - 4.2 - nC
Switching Characteristics
Turn-On Delay Time td(on) VDD=30V, ID=8A, VGS=10V, RG=4.7 - 4 - nS
Rise Time tr - 6 - nS
Turn-Off Delay Time td(off) - 18.8 - nS
Fall Time tf - 6.4 - nS
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 10 A
Reverse Recovery Time Trr IS=5A,di/dt=100 A/sTJ=25 - 15 - nS
Reverse Recovery Charge Qrr - 9 - nC
Package Information
Package Type SOP-8L
Device Code 60N13GD
Order Information Device Package Unit/Tape
SP60N13GDP8 SOP-8L 4000
SOP-8L Package Dimensions (Millimeters)
Symbol Dimensions Min. Max.
A 1.35 1.75
A1 0.10 0.25
A2 1.35 1.55
b 0.33 0.51
c 0.17 0.25
D 4.80 5.00
e 1.27 REF.
E 5.80 6.20
E1 3.80 4.00
L 0.40 1.27
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2504101957_Siliup-SP60N13GDP8_C22466780.pdf

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