surface mount MOSFET Siliup SP60N13GDP8 designed for DC DC converters and motor control applications
Product Overview
The SP60N13GDP8 is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for efficient power management. Featuring advanced Split Gate Trench Technology and a fast switching speed, this MOSFET is ideal for demanding applications such as DC-DC converters and motor control. It offers a low on-state resistance and is 100% tested for single pulse avalanche energy, ensuring reliability and performance in surface mount applications.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Technology: Advanced Split Gate Trench Technology
- Package: SOP-8L
- Testing: 100% Single Pulse avalanche energy Test
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 60 | V | |||
| On-State Resistance | RDS(on)TYP | @10V | 13.5 | m | ||
| On-State Resistance | RDS(on)TYP | @4.5V | 16.5 | m | ||
| Continuous Drain Current | ID | 10 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 60 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current | ID | (Ta=25) | 10 | A | ||
| Continuous Drain Current | ID | (Ta=100C) | 6 | A | ||
| Pulse Drain Current | IDM | Tested | 40 | A | ||
| Single Pulse Avalanche Energy | EAS | 64 | mJ | |||
| Power Dissipation | PD | 1.6 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 78.13 | C/W | |||
| Storage Temperature Range | TJ | -55 | 150 | C | ||
| Operating Junction Temperature Range | TSTG | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250mA | 60 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=48V, VGS=0V | - | - | 1 | uA |
| Gate Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250uA | 1 | 1.8 | 2.5 | V |
| Drain-Source On-state Resistance | RDS(ON) | VGS=10V, ID=8A | - | 13.5 | 17 | m |
| Drain-Source On-state Resistance | RDS(ON) | VGS=4.5V, ID=6A | - | 16.5 | 21 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VGS=0V, VDS=30V,F=1MHz | - | 940 | - | pF |
| Output Capacitance | Coss | - | 235 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 10 | - | pF | |
| Total Gate Charge | Qg | VDS=30V, VGS=10V, ID=8A | - | 15.9 | - | nC |
| Gate-Source Charge | Qgs | - | 2.8 | - | nC | |
| Gate-Drain Charge | Qg d | - | 4.2 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=30V, ID=8A, VGS=10V, RG=4.7 | - | 4 | - | nS |
| Rise Time | tr | - | 6 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 18.8 | - | nS | |
| Fall Time | tf | - | 6.4 | - | nS | |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 10 | A | |
| Reverse Recovery Time | Trr | IS=5A,di/dt=100 A/sTJ=25 | - | 15 | - | nS |
| Reverse Recovery Charge | Qrr | - | 9 | - | nC | |
| Package Information | ||||||
| Package Type | SOP-8L | |||||
| Device Code | 60N13GD | |||||
| Order Information | Device | Package | Unit/Tape | |||
| SP60N13GDP8 | SOP-8L | 4000 | ||||
| SOP-8L Package Dimensions (Millimeters) | ||||||
| Symbol | Dimensions | Min. | Max. | |||
| A | 1.35 | 1.75 | ||||
| A1 | 0.10 | 0.25 | ||||
| A2 | 1.35 | 1.55 | ||||
| b | 0.33 | 0.51 | ||||
| c | 0.17 | 0.25 | ||||
| D | 4.80 | 5.00 | ||||
| e | 1.27 REF. | |||||
| E | 5.80 | 6.20 | ||||
| E1 | 3.80 | 4.00 | ||||
| L | 0.40 | 1.27 | ||||
| 0 | 8 | |||||
2504101957_Siliup-SP60N13GDP8_C22466780.pdf
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.