Surface mount Siliup SP3011CNK 30V MOSFET offering RoHS compliant and halogen free power management
Key Attributes
Model Number:
SP3011CNK
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
24A;21A
Operating Temperature -:
-55℃~+150℃
RDS(on):
11mΩ@10V;14mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
109pF;176pF
Number:
1 N-Channel + 1 P-Channel
Input Capacitance(Ciss):
940pF;1.316nF
Output Capacitance(Coss):
131pF;180pF
Pd - Power Dissipation:
25W
Gate Charge(Qg):
9.6nC@4.5V;26nC@10V
Mfr. Part #:
SP3011CNK
Package:
PDFN-8L(5x6)
Product Description
Product Overview
The SP3011CNK is a 30V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for efficient power management, it offers fast switching speeds and is available in a surface mount PDFN5X6-8L package. This RoHS compliant and Halogen-Free component is ideal for applications such as DC-DC converters and motor control. It features 100% single pulse avalanche energy testing for enhanced reliability.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Line: SP3011CNK
- Package Type: PDFN5X6-8L
- Compliance: ROHS Compliant & Halogen-Free
- Testing: 100% Single Pulse avalanche energy Test
Technical Specifications
General Specifications:
| Parameter | Symbol | N-Channel Rating | P-Channel Rating | Unit |
|---|---|---|---|---|
| Drain-Source Voltage | V(BR)DSS | 30V | -30V | V |
| RDS(on) @ 10V | RDS(on)TYP | 11m | 14m | @10V |
| RDS(on) @ 4.5V | RDS(on)TYP | 17m | 18m | @4.5V |
| Continuous Drain Current | ID | 24A | -21A | @Tc=25C |
| Pulse Drain Current | IDM | 96A | -84A | Tested |
| Single Pulsed Avalanche Energy | EAS | 49mJ | 81mJ | (Note 1 & 2) |
| Power Dissipation | PD | 25W | @Tc=25C | |
| Storage Temperature Range | TSTG | -55 to 150 C | ||
| Operating Junction Temperature Range | TJ | -55 to 150 C | ||
N-Channel Electrical Characteristics:
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 30 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=24V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS = 10V, ID = 8A | - | 11 | 15 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS = 4.5V, ID = 6A | - | 17 | 23 | m |
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | - | 940 | - | pF |
| Output Capacitance | Coss | - | 131 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 109 | - | pF | |
| Total Gate Charge | Qg | VDS=15V , VGS=4.5V , ID=8A | - | 9.6 | - | nC |
| Gate-Source Charge | Qgs | - | 3.9 | - | nC | |
| Gate-Drain Charge | Qgd | - | 3.4 | - | nC | |
| Turn-On Delay Time | Td(on) | VDD=15V VGS=10V , RG=1.5, ID=8A | - | 4.2 | - | nS |
| Rise Time | Tr | - | 8.2 | - | nS | |
| Turn-Off Delay Time | Td(off) | - | 31 | - | nS | |
| Fall Time | Tf | - | 4 | - | nS | |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Diode Continuous Current | IS | - | - | 24 | A | |
| Reverse recover time | Trr | IS=20A, di/dt=100A/us, Tj=25 | - | 1.2 | - | nS |
| Reverse recovery charge | Qrr | - | 9 | - | nC |
P-Channel Electrical Characteristics:
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -30 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=-24V , VGS=0V , TJ=25 | - | - | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.0 | -1.5 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =-10V, ID =-8A | - | 14 | 21 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =-4.5V, ID =-6A | - | 18 | 27 | m |
| Input Capacitance | Ciss | VDS=-15V , VGS=0V , f=1MHz | - | 1316 | - | pF |
| Output Capacitance | Coss | - | 180 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 176 | - | pF | |
| Total Gate Charge | Qg | VDS=-30V , VGS=-10V , ID=-6A | - | 26 | - | nC |
| Gate-Source Charge | Qgs | - | 2.4 | - | nC | |
| Gate-Drain Charge | Qg d | - | 7 | - | nC | |
| Turn-On Delay Time | Td(on) | VDD=-15V VGS=-10V , RG=6, ID=-1A | - | 10 | - | nS |
| Rise Time | Tr | - | 5 | - | nS | |
| Turn-Off Delay Time | Td(off) | - | 76 | - | nS | |
| Fall Time | Tf | - | 60 | - | nS | |
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | - | - | -1.2 | V |
| Diode Continuous Current | IS | - | - | -21 | A | |
| Reverse recover time | Trr | IS=-20A, di/dt=-100A/us, Tj=25 | - | 62 | - | nS |
| Reverse recovery charge | Qrr | - | 37 | - | nC |
Package Information (PDFN5X6-8L):
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 0.900 | 1.000 | 0.035 | 0.039 |
| A3 | 0.254 REF. | 0.010 REF. | ||
| D | 4.944 | 5.096 | 0.195 | 0.201 |
| E | 5.974 | 6.126 | 0.235 | 0.241 |
| D1 | 1.470 | 1.870 | 0.058 | 0.074 |
| D2 | 0.470 | 0.870 | 0.019 | 0.034 |
| E1 | 3.375 | 3.575 | 0.133 | 0.141 |
| D3 | 4.824 | 4.976 | 0.190 | 0.196 |
| E2 | 5.674 | 5.826 | 0.223 | 0.229 |
| k | 1.190 | 1.390 | 0.047 | 0.055 |
| b | 0.350 | 0.450 | 0.014 | 0.018 |
| e | 1.270 TYP. | 0.050 TYP. | ||
| L | 0.559 | 0.711 | 0.022 | 0.028 |
| L1 | 0.424 | 0.576 | 0.017 | 0.023 |
| H | 0.574 | 0.726 | 0.023 | 0.029 |
| 10 | 12 | 10 | 12 |
Order Information:
| Device | Package | Unit/Tape |
|---|---|---|
| SP3011CNK | PDFN5X6-8L | 5000 |
Notes:
- The EAS Test condition is VDD=15V,VGS =10V,L = 0.5mH, Rg=25
- The EAS Test condition is VDD=-15V,VGS =-10V,L = 0.5mH, Rg=25
2504101957_Siliup-SP3011CNK_C22385425.pdf
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