Low Gate Charge 200V N Channel MOSFET Siliup SP020N09GHTQ Fast Switching in TO 220 3L Package for Power
Key Attributes
Model Number:
SP020N09GHTQ
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
110A
Operating Temperature -:
-55℃~+150℃
RDS(on):
9.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
19pF@100V
Number:
-
Pd - Power Dissipation:
270W
Input Capacitance(Ciss):
5.318nF@100V
Gate Charge(Qg):
48nC@10V
Mfr. Part #:
SP020N09GHTQ
Package:
TO-220-3L
Product Description
Product Overview
The SP020N09GHTQ is a 200V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on). This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, DC-DC converters, and power management systems. The device comes in a TO-220-3L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP020N09GHTQ
- Package: TO-220-3L
- Marking: 020N09GH
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Product Summary | ||||||
| V(BR)DSS | 200 | V | ||||
| RDS(on)TYP | @10V | 9.5 | m | |||
| ID | 110 | A | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 200 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | 110 | A | |||
| Continuous Drain Current (Tc=100) | ID | 73 | A | |||
| Pulsed Drain Current | IDM | 440 | A | |||
| Single Pulse Avalanche Energy | EAS | 1296 | mJ | |||
| Power Dissipation (Tc=25) | PD | 270 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.46 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 200 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS = 160V, VGS = 0V | - | - | 1 | uA |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.0 | 3.0 | 4.0 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 20A | - | 9.5 | 11.5 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS =100V, VGS = 0V, f = 1.0MHz | - | 4183 | - | pF |
| Output Capacitance | Coss | - | 437 | - | ||
| Reverse Transfer Capacitance | Crss | - | 12 | - | ||
| Total Gate Charge | Qg | VDS=100V , VGS=10V , ID=20A | - | 48 | - | nC |
| Gate-Source Charge | Qgs | - | 31 | - | ||
| Gate-Drain Charge | Qg d | - | 11 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS = 10V, VDS =100V, RL=3.5 RG = 6.0 | - | 13 | - | nS |
| Rise Time | tr | - | 25 | - | ||
| Turn-Off Delay Time | td(off) | - | 31 | - | ||
| Fall Time | tf | - | 25 | - | ||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 110 | A | |
| Reverse Recovery Time | Trr | IS=140A, di/dt=100A/us, TJ=25 | - | 165 | - | nS |
| Reverse Recovery Charge | Qrr | - | 521 | - | nC | |
Note: EAS test condition is VDD=50V,VGS=10V,L=0.5mH,RG=25.
Package Information (TO-220-3L)
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min. | Max. | Min. | Max. | |
| A | 4.400 | 4.600 | 0.173 | 0.181 |
| A1 | 2.250 | 2.550 | 0.089 | 0.100 |
| b | 0.710 | 0.910 | 0.028 | 0.036 |
| b1 | 1.170 | 1.370 | 0.046 | 0.054 |
| c | 0.330 | 0.650 | 0.013 | 0.026 |
| c1 | 1.200 | 1.400 | 0.047 | 0.055 |
| D | 9.910 | 10.250 | 0.390 | 0.404 |
| E | 8.950 | 9.750 | 0.352 | 0.384 |
| E1 | 12.650 | 13.050 | 0.498 | 0.514 |
| e | 2.540 TYP. | 0.100 TYP. | ||
| e1 | 4.980 | 5.180 | 0.196 | 0.204 |
| F | 2.650 | 2.950 | 0.104 | 0.116 |
| H | 7.900 | 8.100 | 0.311 | 0.319 |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| L | 12.900 | 13.400 | 0.508 | 0.528 |
| L1 | 2.850 | 3.250 | 0.112 | 0.128 |
| V | 6.900 REF. | 0.276 REF. | ||
| 3.400 | 3.800 | 0.134 | 0.150 |
2504101957_Siliup-SP020N09GHTQ_C42372351.pdf
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