Low On Resistance 30V N-Channel MOSFET Siliup SP30N01GTQ Suitable for High Current Power Applications
Key Attributes
Model Number:
SP30N01GTQ
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
160A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.65mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.9V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
101pF
Number:
1 N-channel
Input Capacitance(Ciss):
5.451nF
Output Capacitance(Coss):
1.832nF
Pd - Power Dissipation:
180W
Gate Charge(Qg):
92nC@10V
Mfr. Part #:
SP30N01GTQ
Package:
TO-220-3L
Product Description
Product Overview
The SP30N01GTQ is a 30V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced Split Gate Trench Technology, it offers fast switching speeds, low gate charge, and low RDS(on). This MOSFET is ideal for power switching applications and DC-DC converters, featuring 100% single pulse avalanche energy testing for enhanced reliability.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 30N01G
- Package: TO-220-3L
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 30 | V | |||
| Drain-Source On-state Resistance | RDS(on) | @10V | 1.65 | m | ||
| Drain-Source On-state Resistance | RDS(on) | @4.5V | 2 | m | ||
| Continuous Drain Current | ID | 160 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 60 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current (Tc=25C) | ID | 160 | A | |||
| Continuous Drain Current (Tc=100C) | ID | 110 | A | |||
| Pulse Drain Current | IDM | Tested | 640 | A | ||
| Single Pulse Avalanche Energy | EAS | 1444 | mJ | |||
| Power Dissipation (Tc=25C) | PD | 180 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.69 | C/W | |||
| Maximum Junction Temperature | TJ | -55 | 150 | C | ||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 30 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=24V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1 | 1.9 | 2.5 | V |
| Drain-Source On-state Resistance | RDS(ON) | VGS=10V , ID=20A | - | 1.65 | 2.1 | m |
| Drain-Source On-state Resistance | RDS(ON) | VGS=4.5V, ID=20A | - | 2 | 2.7 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | - | 5451 | - | pF |
| Output Capacitance | Coss | - | 1832 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 101 | - | pF | |
| Total Gate Charge | Qg | VDS=15V , VGS=10V , ID=20A | - | 92 | - | nC |
| Gate-Source Charge | Qgs | - | 12 | - | nC | |
| Gate-Drain Charge | Qgd | - | 13 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=15V , VGS=10V , RG=1.6 ID=60A | - | 13 | - | nS |
| Rise Time | tr | - | 6 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 45 | - | nS | |
| Fall Time | tf | - | 8 | - | nS | |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 160 | A | |
| Reverse Recovery Time | trr | IS=50 A,di/dt=100 A/sTJ=25 | - | 35 | - | nS |
| Reverse Recovery Charge | Qrr | - | 106 | - | nC | |
Package Information (TO-220-3L)
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min | Max | Min | Max | |
| A | 4.400 | 4.600 | 0.173 | 0.181 |
| A1 | 2.250 | 2.550 | 0.089 | 0.100 |
| b | 0.710 | 0.910 | 0.028 | 0.036 |
| b1 | 1.170 | 1.370 | 0.046 | 0.054 |
| c | 0.330 | 0.650 | 0.013 | 0.026 |
| c1 | 1.200 | 1.400 | 0.047 | 0.055 |
| D | 9.910 | 10.250 | 0.390 | 0.404 |
| E | 8.950 | 9.750 | 0.352 | 0.384 |
| E1 | 12.650 | 13.050 | 0.498 | 0.514 |
| e | 2.540 TYP. | 0.100 TYP. | ||
| e1 | 4.980 | 5.180 | 0.196 | 0.204 |
| F | 2.650 | 2.950 | 0.104 | 0.116 |
| H | 7.900 | 8.100 | 0.311 | 0.319 |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| L | 12.900 | 13.400 | 0.508 | 0.528 |
| L1 | 2.850 | 3.250 | 0.112 | 0.128 |
| V | 6.900 REF. | 0.276 REF. | ||
| 3.400 | 3.800 | 0.134 | 0.150 | |
2504101957_Siliup-SP30N01GTQ_C22385388.pdf
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