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quality Compact SOT 523 package P Channel MOSFET Siliup SP2006KT5J designed for surface mount load switching factory
quality Compact SOT 523 package P Channel MOSFET Siliup SP2006KT5J designed for surface mount load switching factory

Compact SOT 523 package P Channel MOSFET Siliup SP2006KT5J designed for surface mount load switching

Key Attributes
Model Number: SP2006KT5J
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
660mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
1Ω@2.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
9pF@16V
Number:
1 P-Channel
Input Capacitance(Ciss):
113pF@16V
Pd - Power Dissipation:
150mW
Mfr. Part #:
SP2006KT5J
Package:
SOT-523
Product Description

Product Overview

The SP2006KT5J is a 20V P-Channel MOSFET designed for surface mount applications. It features low RDS(on) and operates at low logic level gate drive, making it suitable for load/power switching, interfacing, logic switching, and battery management in ultra-small portable electronics. This device is ESD protected.

Product Attributes

  • Brand: Shanghai Siliup Semiconductor Technology Co. Ltd.
  • Model: SP2006KT5J
  • Technology: P-Channel MOSFET
  • Package: SOT-523
  • Marking Code: 39K

Technical Specifications

Parameter Symbol Test Condition Min. Typ. Max. Unit
Product Summary
Drain-Source Voltage V(BR)DSS -20 V
RDS(on) MAX RDS(on) @-4.5V 0.75
RDS(on) @-2.5V 1.0
Continuous Drain Current ID -0.66 A
Absolute Maximum Ratings (Ta=25 unless otherwise noted)
Drain-Source Voltage VDS -20 V
Gate-Source Voltage VGS 12 V
Continuous Drain Current ID -0.66 A
Pulsed Drain Current IDM -1.2 A
Power Dissipation PD 0.15 W
Thermal Resistance Junction to Ambient RJA 833 /W
Junction Temperature TJ 150
Storage Temperature TSTG -55 ~ +150
Electrical Characteristics (TA=25 oC, unless otherwise noted)
Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250A -20 V
Zero gate voltage drain current IDSS VDS =-16V,VGS = 0V -1 A
Gate-body leakage current IGSS VGS = 10VVDS =0V 10 A
Gate threshold voltage VGS(th) VDS =VGS, ID =-250A -0.35 -0.65 -1 V
Drain-source on-resistance RDS(on) VGS = -4.5V, ID = -0.5A 0.65 0.75
RDS(on) VGS = -2.5V, ID = -0.2A 0.85 1.0 V
RDS(on) VGS = -1.8V, ID = -0.1A 1.2 V
Dynamic Characteristics2)
Input Capacitance Ciss VDS =-16V,VGS =0V,f =1MHz 113 pF
Output Capacitance Coss 15 pF
Reverse Transfer Capacitance Crss 9 pF
Turn-on delay time td(on) VDS=-10V,ID=-200mA, VGS=-4.5V,RG=10 9 ns
Turn-on rise time tr 5.7 ns
Turn-off delay time td(off) 32.6 ns
Turn-off fall time tf 20.3 ns
Source-Drain Diode Characteristics
Diode Forward voltage VSD VGS =0V, IS=-0.5 A -1.2 V

Notes:
1) Pulse Test: Pulse Width < 300s, Duty Cycle 2%.
2) Guaranteed by design, not subject to production testing.

SOT-523 Package Information (Dimensions in Millimeters)

Symbol Dimensions Min Max
A 0.700 0.900
A1 0.000 0.100
A2 0.700 0.800
b1 0.150 0.250
b2 0.250 0.350
C 0.100 0.200
D 1.500 1.700
E 0.700 0.900
E1 1.450 1.750
e 0.500 TYP
e1 0.900 1.100
L 0.400 REF
L1 0.260 0.460
0 8

2411212332_Siliup-SP2006KT5J_C41355142.pdf
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