110V N Channel Power MOSFET Siliup SP011N02AGHTF Designed for Power Switching and DC DC Converter Applications
Key Attributes
Model Number:
SP011N02AGHTF
Product Custom Attributes
Drain To Source Voltage:
110V
Current - Continuous Drain(Id):
300A
RDS(on):
1.9mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
33pF
Number:
1 N-channel
Output Capacitance(Coss):
1.946nF
Input Capacitance(Ciss):
12.22nF
Pd - Power Dissipation:
310W
Gate Charge(Qg):
198nC@10V
Mfr. Part #:
SP011N02AGHTF
Package:
TO-247
Product Description
Product Overview
The SP011N02AGHTF is a 110V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, DC-DC converters, and power management systems. It comes in a TO-247 package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP011N02AGHTF
- Technology: Advanced Split Gate Trench Technology
- Channel Type: N-Channel
- Package: TO-247 (Pinout: 1:G, 2:D, 3:S)
- Material: Silicon (implied by "Siliup" and "Semiconductor")
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 110 | V | |||
| RDS(on) | RDS(on)TYP | @10V | 1.9 | m | ||
| Continuous Drain Current | ID | 300 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25, unless otherwise noted) | 110 | V | ||
| Gate-Source Voltage | VGS | (Ta=25, unless otherwise noted) | 20 | V | ||
| Continuous Drain Current | ID | (Tc=25) | 300 | A | ||
| Continuous Drain Current | ID | (Tc=100) | 200 | A | ||
| Pulsed Drain Current | IDM | 1200 | A | |||
| Single Pulse Avalanche Energy | EAS | 1956 | mJ | |||
| Power Dissipation | PD | (Tc=25) | 310 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 0.4 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 110 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS=80V, VGS=0V, TJ=25 | - | - | 1 | A |
| Gate Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID =250uA | 2 | 3 | 4 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS=10V, ID=20A | - | 1.9 | 2.5 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=50V, VGS=0V, f=1MHz | - | 12220 | - | pF |
| Output Capacitance | Coss | VDS=50V, VGS=0V, f=1MHz | - | 1946 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=50V, VGS=0V, f=1MHz | - | 33 | - | pF |
| Total Gate Charge | Qg | VDS=50V, VGS=10V, ID=125A | - | 198 | - | nC |
| Gate-Source Charge | Qgs | VDS=50V, VGS=10V, ID=125A | - | 51 | - | |
| Gate-Drain Charge | Qg d | VDS=50V, VGS=10V, ID=125A | - | 37 | - | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=50V, VGS=10V, RG=1.6, ID=125A | - | 25 | - | nS |
| Rise Time | tr | VDD=50V, VGS=10V, RG=1.6, ID=125A | - | 75 | - | |
| Turn-Off Delay Time | td(off) | VDD=50V, VGS=10V, RG=1.6, ID=125A | - | 89 | - | |
| Fall Time | tf | VDD=50V, VGS=10V, RG=1.6, ID=125A | - | 29 | - | |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 300 | A | |
| Reverse Recovery Time | Trr | IS=50A, di/dt=100A/us, TJ=25 | - | 96 | - | nS |
| Reverse Recovery Charge | Qrr | IS=50A, di/dt=100A/us, TJ=25 | - | 228 | - | nC |
| Package Outline Dimensions (TO-247) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 4.850 - 5.150 | 0.191 - 0.200 | ||||
| A1 | 2.200 - 2.600 | 0.087 - 0.102 | ||||
| b | 1.000 - 1.400 | 0.039 - 0.055 | ||||
| b1 | 2.800 - 3.200 | 0.110 - 0.126 | ||||
| b2 | 1.800 - 2.200 | 0.071 - 0.087 | ||||
| c | 0.500 - 0.700 | 0.020 - 0.028 | ||||
| c1 | 1.900 - 2.100 | 0.075 - 0.083 | ||||
| D | 15.450 - 15.750 | 0.608 - 0.620 | ||||
| E1 | 3.500 REF. | 0.138 REF. | ||||
| E2 | 3.600 REF. | 0.142 REF. | ||||
| L | 40.900 - 41.300 | 1.610 - 1.626 | ||||
| L1 | 24.800 - 25.100 | 0.976 - 0.988 | ||||
| L2 | 20.300 - 20.600 | 0.799 - 0.811 | ||||
| 7.100 - 7.300 | 0.280 - 0.287 | |||||
| e | 5.450 TYP. | 0.215 TYP. | ||||
| H | 5.980 REF. | 0.235 REF. | ||||
| h | 0.000 - 0.300 | 0.000 - 0.012 | ||||
2506271720_Siliup-SP011N02AGHTF_C49257251.pdf
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