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quality NPN transistor Slkor 2SD1898-R designed for general purpose switching and amplification applications factory
quality NPN transistor Slkor 2SD1898-R designed for general purpose switching and amplification applications factory

NPN transistor Slkor 2SD1898-R designed for general purpose switching and amplification applications

Key Attributes
Model Number: 2SD1898-R
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
1uA
DC Current Gain:
180@500mA,3V
Transition Frequency(fT):
100MHz
Type:
-
Vce Saturation(VCE(sat)):
400mV@500mA,50mA
Pd - Power Dissipation:
2W
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
80V
Operating Temperature:
-
Mfr. Part #:
2SD1898-R
Package:
SOT-89
Product Description

Product Overview

The 2SD1898 is a high-performance NPN bipolar transistor designed for general-purpose applications. It features a high collector-emitter voltage (VCEO) of 80V and a continuous collector current (IC) of 1A, making it suitable for various switching and amplification tasks. The device offers a low collector-emitter saturation voltage (VCE(sat)) for efficient operation and is complementary to the 2SB1260 PNP transistor. Key electrical characteristics include a DC current gain (hFE) ranging from 120 to 390 and a transition frequency (fT) of 100 MHz.

Product Attributes

  • Complementary to 2SB1260
  • Manufacturer: SLKORmicro (implied by website URL)

Technical Specifications

Parameter Symbol Rating/Conditions Unit
Features
High VCEO VCEO 80 V
High IC (DC) IC 1 A
Low VCE (sat)
Absolute Maximum Ratings (Ta = 25)
Collector - Base Voltage VCBO 120 V
Collector - Emitter Voltage VCEO 80 V
Emitter - Base Voltage VEBO 5 V
Collector Current - Continuous IC 1 A
Collector Current - Pulse ICP 2 A
Junction Temperature TJ 150
Storage Temperature Range Tstg -55 to 150
Collector Power Dissipation PC W
Electrical Characteristics (Ta = 25)
Collector-base breakdown voltage VCBO Ic= 100 uA, IE= 0 120 V
Collector-emitter breakdown voltage VCEO Ic= 1 mA, IB= 0 80 V
Emitter-base breakdown voltage VEBO IE= 100 uA, IC= 0 5 V
Collector-base cut-off current ICBO VCB= 100 V, IE= 0 1 uA
Emitter cut-off current IEBO VEB= 4V, IC=0 0.5 uA
Collector-emitter saturation voltage VCE(sat) IC=500 mA, IB=50 mA 0.15 - 0.4 V
Base-emitter saturation voltage VBE(sat) IC=500 mA, IB=50 mA 1.2 V
DC current gain hFE VCE= 3V, IC= 500 mA 120 - 390
Collector Output capacitance Cob VCB= 10V, IE= 0, f=1MHz 20 pF
Transition frequency fT VCE= 10V, IE= -50mA, f=100MHz 100 MHz
hFE Classification
Type Range Marking
2SD1898-Q 120-270 DF Q*
2SD1898-R 180-390 DF R*

2410010101_Slkor-2SD1898-R_C2965568.pdf

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