Ultra high frequency transistor Slkor 2SC3357 RF featuring low noise and high gain for RF amplifier

Name: Ultra high frequency transistor Slkor 2SC3357 RF featuring low noise and high gain for RF amplifier
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: 2SC3357 RF
Availability: InStock

Key Attributes

Model Number: 2SC3357 RF

Product Custom Attributes

Emitter-Base Voltage(Vebo):

2.5V

Current - Collector Cutoff:

100nA

DC Current Gain:

90@20mA,10V

Transition Frequency(fT):

6.5GHz

Vce Saturation(VCE(sat)):

Type:

NPN

Pd - Power Dissipation:

1.2W

Current - Collector(Ic):

100mA

Collector - Emitter Voltage VCEO:

12V

Operating Temperature:

Mfr. Part #:

2SC3357 RF

Package:

SOT-89

Product Description

Product Overview

The 2SC3357 is an ultra-high frequency, low-noise NPN silicon epitaxial bipolar transistor designed using a planar process. It offers high power gain, a low noise figure, a wide dynamic range, and ideal current characteristics. Packaged in an SOT-89 surface-mount package, this transistor is primarily used in high-frequency broadband low-noise amplifiers for applications such as VHF, UHF, and CATV.

Product Attributes

Brand: SLKOR Micro (implied by URL)
Transistor Type: NPN Bipolar
Process: Planar Silicon Epitaxial
Package: SOT-89

Technical Specifications

Parameter	Symbol	Typical Value	Unit	Test Conditions
High Gain (\|S21e\|)	\|S21e\|	10	dB	VCE=10V, IC=20mA, f=1GHz
Low Noise Figure (NF)	NF	1.7	dB	VCE=10V, IC=7mA, f=1GHz
Gain Bandwidth Product (fT)	fT	6.5	GHz	VCE=10V, IC=20mA, f=1GHz
Collector-Base Breakdown Voltage	VCBO	20	V	IC=1.0A
Collector-Emitter Breakdown Voltage	VCEO	12	V	IC=100A
Emitter-Base Breakdown Voltage	VEBO	2.5	V	IE=1.0A
Collector Current	IC	100	mA	-
Power Dissipation	PC	1200	mW	*With heatsink
Junction Temperature	Tj	150		-
Storage Temperature	Tstg	-65 ~ +150		-
DC Current Gain (hFE)	hFE	60 - 250	-	VCE=10V, IC=20mA
Collector-Base Leakage Current	ICBO	0.1	A	VCB=10V
Emitter-Base Leakage Current	IEBO	0.1	A	VEB=1V
Output Feedback Capacitance	Cre	0.65	pF	VCB=10V, IE=0mA, f=1MHz
Insertion Power Gain (\|S21e\|)	\|S21e\|	9 - 10	dB	VCE=10V, IC=20mA, f=1GHz

Package Dimensions (SOT-89)

Symbol	Min (mm)	Max (mm)
A	1.4	1.6
b	0.32	0.52
b1	0.4	0.58
c	0.35	0.44
D	4.4	4.6
D1	1.55	-
E	2.3	2.6
E1	3.94	4.25
e	1.5	-
e1	3	-
L	0.9	1.2

Pin Definition

1: Base
2: Collector
3: Emitter

Scattering Parameters (S-Parameter)

Test Conditions: VCE=10V, IC=20mA, ZO=50

Frequency (GHz)	S11		S21		S12		S22
MAG	ANG	MAG	ANG	MAG	ANG	MAG	ANG
0.1	0.428	-60.224	22.164	145.74	0.023	104.25	0.511	7.6753
0.2	0.253	-117.89	13.861	114.86	0.043	82.102	0.417	-27.876
0.3	0.212	-145.3	9.759	101.71	0.056	81.584	0.381	-42.616
0.4	0.189	-169.34	7.674	93.823	0.072	77.728	0.370	-50.74
0.5	0.174	172.38	6.214	88.463	0.086	74.095	0.372	-61.589
0.6	0.171	154.24	5.164	82.661	0.102	74.858	0.378	-70.929
0.7	0.163	141.51	4.465	77.532	0.118	74.821	0.391	-79.882
0.8	0.160	127.18	3.868	72.492	0.132	73.33	0.400	-87.409
0.9	0.151	115.31	3.473	66.78	0.148	73.294	0.423	-95.753
1	0.151	102.36	3.168	63.403	0.162	71.299	0.435	-104.1
1.1	0.142	88.639	2.868	60.58	0.180	70.737	0.450	-112.42
1.2	0.138	77.466	2.520	57.553	0.197	69.384	0.475	-120.11
1.3	0.137	64.644	2.237	53.468	0.205	67.626	0.479	-126.83
1.4	0.135	52.022	2.053	50.386	0.221	66.669	0.503	-133.31
1.5	0.131	39.53	1.879	46.524	0.245	65.426	0.519	-139.42
1.6	0.134	28.437	1.805	44.72	0.261	62.681	0.525	-147.55
1.7	0.140	15.808	1.632	48.301	0.279	62.412	0.546	-152.46
1.8	0.139	6.0136	1.453	46.876	0.294	60.664	0.569	-159.89
1.9	0.148	-8.0118	1.349	45.758	0.300	57.496	0.585	-165.38
2	0.152	-15.281	1.260	45.023	0.316	55.64	0.611	-171.46
2.1	0.163	-25.128	1.274	44.816	0.334	54.651	0.613	-177.8

2009141834_Slkor-2SC3357-RF_C781322.pdf

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