Low On Resistance and Fast Switching 30V MOSFET Siliup SP30N08DNJ for Power Management Applications

Key Attributes
Model Number: SP30N08DNJ
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
18A
RDS(on):
8.5mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
131pF
Number:
2 N-Channel
Output Capacitance(Coss):
163pF
Pd - Power Dissipation:
20W
Input Capacitance(Ciss):
1.317nF
Gate Charge(Qg):
12.6nC@10V
Mfr. Part #:
SP30N08DNJ
Package:
PDFN-8L-B(3x3)
Product Description

Product Overview

The SP30N08DNJ is a 30V Dual N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. This MOSFET features fast switching speed, low On-Resistance, and is 100% tested for single pulse avalanche energy. It is designed for applications such as DC-DC Converters and Power Management, utilizing the PDFN3X3-8L package.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Device Code: SP30N08DNJ
  • Package: PDFN3X3-8L
  • Material: Silicon (implied by "Siliup Semiconductor Technology")

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
V(BR)DSS 30 V
RDS(on)TYP @10V 8.5 m
RDS(on)TYP @4.5V 13 m
ID 18 A
Absolute Maximum Ratings
Drain-Source Voltage VDSS 30 V
Gate-Source Voltage VGSS 20 V
Continuous Drain Current (Tc=25C) ID 18 A
Continuous Drain Current (Tc=100C) ID 12 A
Pulse Drain Current Tested IDM 72 A
Single Pulse Avalanche Energy EAS (VDD=20V, VG=10V, L=0.5mH, Rg=25) 81 mJ
Power Dissipation (Tc=25C) PD 20 W
Thermal Resistance Junction-to-Case RJC 6.25 C/W
Storage Temperature Range TSTG -55 150 C
Operating Junction Temperature Range TJ -55 150 C
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 30 - - V
Drain-Source Leakage Current IDSS VDS=24V , VGS=0V , TJ=25 - - 1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1.0 1.5 2.2 V
Static Drain-Source On-Resistance RDS(ON) VGS=10V, ID=8A - 8.5 12 m
Static Drain-Source On-Resistance RDS(ON) VGS=4.5V, ID=6A - 13 17 m
Input Capacitance Ciss VDS=15V , VGS=0V , f=1MHz - 1317 - pF
Output Capacitance Coss - 163 - pF
Reverse Transfer Capacitance Crss - 131 - pF
Total Gate Charge Qg VDS=15V , VGS=10V , ID=12A - 12.6 - nC
Gate-Source Charge Qgs - 4.2 - nC
Gate-Drain Charge Qg - 5.1 - nC
Turn-On Delay Time Td(on) VDD=20V, VGS=10V , RG=3, ID=12A - 6.2 - nS
Rise Time Tr - 59 - nS
Turn-Off Delay Time Td(off) - 27.6 - nS
Fall Time Tf - 8.4 - nS
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 18 A
Reverse recover time Trr IS=10A, di/dt=100A/us, Tj=25 - 13 - nS
Reverse recovery charge Qrr - 6 - nC
Package Information (PDFN33-8L)
Symbol Dimensions (mm) Dimensions (inch) Min. Max. Min. Max.
A 0.650 - 0.850 0.026 - 0.033
A1 0.152 REF. 0.006 REF.
A2 0~0.05 0~0.002
D 2.900 - 3.100 0.114 - 0.122
D1 0.935 - 1.135 0.037 - 0.045
D2 0.280 - 0.480 0.011 - 0.019
E 2.900 - 3.100 0.114 - 0.122
E1 3.150 - 3.450 0.124 - 0.136
E2 1.535 - 1.935 0.060 - 0.076
b 0.200 - 0.400 0.008 - 0.016
e 0.550 - 0.750 0.022 - 0.030
L 0.300 - 0.500 0.012 - 0.020
L1 0.180 - 0.480 0.007 - 0.019
L2 0~0.100 0~0.004
L3 0~0.100 0~0.004
H 0.315 - 0.515 0.012 - 0.020
9 - 13 9 - 13

2504101957_Siliup-SP30N08DNJ_C41355065.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.