Durable 40 Volt N Channel MOSFET Siliup SP40N06TH Featuring 6 Milliohm Typical Rdson at 10 Volt Gate
Key Attributes
Model Number:
SP40N06TH
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
70A
RDS(on):
6mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
135pF
Number:
1 N-channel
Output Capacitance(Coss):
168pF
Input Capacitance(Ciss):
2.45nF
Pd - Power Dissipation:
60W
Gate Charge(Qg):
45nC@10V
Mfr. Part #:
SP40N06TH
Package:
TO-252-2L
Product Description
Product Overview
The SP40N06TH is a 40V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low Rdson, with ratings of 6m@10V and 8m@4.5V. This MOSFET is designed for applications such as DC-DC converters and load switching, offering 100% single pulse avalanche energy testing for reliability.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 40N06
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 40 | V | |||
| RDS(on)TYP | @10V | 6 | m | |||
| RDS(on)TYP | @4.5V | 8 | m | |||
| ID | 70 | A | ||||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 40 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (TC=25) | ID | 70 | A | |||
| Continuous Drain Current (TC=100) | ID | 47 | A | |||
| Pulsed Drain Current | IDM | 280 | A | |||
| Single Pulse Avalanche Energy | EAS | 145 | mJ | |||
| Power Dissipation (TC=25) | PD | 60 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 2.1 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 40 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=32V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=12A | - | 6 | 8 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=10A | - | 8 | 12 | m |
| Input Capacitance | Ciss | VDS=20V , VGS=0V , f=1MHz | - | 2450 | - | pF |
| Output Capacitance | Coss | - | 168 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 135 | - | pF | |
| Total Gate Charge | Qg | VDS=20V , VGS=10V , ID=20A | - | 45 | - | nC |
| Gate-Source Charge | Qgs | - | 11 | - | ||
| Gate-Drain Charge | Qgd | - | 11 | - | ||
| Turn-On Delay Time | Td(on) | VDD=20V VGS=10V , RG=3, ID=20A | - | 11 | - | nS |
| Rise Time | Tr | - | 29 | - | ||
| Turn-Off Delay Time | Td(off) | - | 42 | - | ||
| Fall Time | Tf | - | 7 | - | ||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 70 | A | |
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, TJ=25 | - | 12 | - | nS |
| Reverse Recovery Charge | Qrr | - | 7 | - | nC | |
| TO-252 Package Information | ||||
|---|---|---|---|---|
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min. | Max. | Min. | Max. | |
| A | 2.200 | 2.400 | 0.087 | 0.094 |
| A1 | 0.000 | 0.127 | 0.000 | 0.005 |
| b | 0.660 | 0.860 | 0.026 | 0.034 |
| c | 0.460 | 0.580 | 0.018 | 0.023 |
| D | 6.500 | 6.700 | 0.256 | 0.264 |
| D1 | 5.100 | 5.460 | 0.201 | 0.215 |
| D2 | 4.830 | REF. | 0.190 | REF. |
| E | 6.000 | 6.200 | 0.236 | 0.244 |
| e | 2.186 | 2.386 | 0.086 | 0.094 |
| L | 9.800 | 10.400 | 0.386 | 0.409 |
| L1 | 2.900 | REF. | 0.114 | REF. |
| L2 | 1.400 | 1.700 | 0.055 | 0.067 |
| L3 | 1.600 | REF. | 0.063 | REF. |
| L4 | 0.600 | 1.000 | 0.024 | 0.039 |
| 1.100 | 1.300 | 0.043 | 0.051 | |
| 0 | 8 | 0 | 8 | |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| V | 5.350 | REF. | 0.211 | REF. |
2504101957_Siliup-SP40N06TH_C41355046.pdf
Related Products
power control Sensata B612F-2T-YEC module for AC DC variable voltage output applications up to 15KW
Sensata B-2T, B-2 Series Power Modules The Sensata B-2T and B-2 Series Power Modules offer versatile solutions for AC or DC variable voltage output applications, capable of handling up to 15KW. These modules feature eight circuit options and are UL Recognized (E72445), providing reliable performance ...
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic
Product OverviewThe DTC124EUA is a digital transistor with built-in resistors, designed for easy configuration of inverter circuits without external input resistors. It features a surface mount package ideal for automatic insertion and meets UL-94 V-0 flammability rating. This NPN transistor is ...
Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability
Product OverviewThe MG50HF12TLC1 S-M392 is a high-performance IGBT module designed for inverter applications, AC/DC servo drive amplifiers, UPS systems, and soft switching welding machines. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
