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quality Power MOSFET 60V N Channel Siliup SP60N08GNK Featuring Split Gate Trench Technology and Low On Resistance factory
quality Power MOSFET 60V N Channel Siliup SP60N08GNK Featuring Split Gate Trench Technology and Low On Resistance factory

Power MOSFET 60V N Channel Siliup SP60N08GNK Featuring Split Gate Trench Technology and Low On Resistance

Key Attributes
Model Number: SP60N08GNK
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
55A
RDS(on):
7.5mΩ@10V;10mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.7V@250uA
Reverse Transfer Capacitance (Crss@Vds):
25pF
Number:
1 N-channel
Output Capacitance(Coss):
310pF
Input Capacitance(Ciss):
1.35nF
Pd - Power Dissipation:
60W
Gate Charge(Qg):
27.9nC@10V
Mfr. Part #:
SP60N08GNK
Package:
PDFN-8L(5x6)
Product Description

Product Overview

The SP60N08GNK is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is designed for power switching applications, including hard switched and high-frequency circuits, as well as uninterruptible power supplies. It is available in a PDFN5X6-8L package.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Line: SP60N08GNK
  • Channel Type: N-Channel
  • Technology: Split Gate Trench Technology
  • Package: PDFN5X6-8L

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Unit
Drain-Source Voltage V(BR)DSS 60 V
Drain-Source On-state Resistance RDS(on) 10V 7.5 9.5 m
Drain-Source On-state Resistance RDS(on) 4.5V 10 13.5 m
Continuous Drain Current ID Tc=25C 55 A
Continuous Drain Current ID Tc=100C 35 A
Pulse Drain Current IDM Tested 220 A
Single Pulse Avalanche Energy EAS 121 mJ
Power Dissipation PD Tc=25C 60 W
Thermal Resistance Junction-to-Case RJC 2.08 C/W
Maximum Junction Temperature TJ -55 150 C
Storage Temperature Range TSTG -55 150 C
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250mA 60 - - V
Zero Gate Voltage Drain Current IDSS VDS=48V, VGS=0V - - 1 uA
Gate Leakage Current IGSS VGS=20V, VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VDS=VGS, ID=250uA 1 1.7 2.5 V
Input Capacitance Ciss VGS=0V, VDS=30V,F=1MHz - 1350 - pF
Output Capacitance Coss - 310 - pF
Reverse Transfer Capacitance Crss - 25 - pF
Total Gate Charge Qg VDS=30V, VGS=10V, ID=20A - 27.9 - nC
Gate-Source Charge Qgs - 7.8 - nC
Gate-Drain Charge Qg d - 6.2 - nC
Turn-On Delay Time td(on) VDD=30V, ID=20A, VGS=10V, RG=4.7 - 14 - nS
Rise Time tr - 26 - nS
Turn-Off Delay Time td(off) - 33.8 - nS
Fall Time tf - 26.4 - nS
Source-Drain Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 55 A
Reverse Recovery Time Trr IS=30 A,di/dt=100 A/sTJ=25 - 36 - nS
Reverse Recovery Charge Qrr - 23 - nC
PDFN5X6-8L Package Information
Symbol Dimensions In Millimeters Dimensions In Inches
A 0.900 - 1.000 0.035 - 0.039
A3 0.254REF. 0.010REF.
D 4.944 - 5.096 0.195 - 0.201
E 5.974 - 6.126 0.235 - 0.241
D1 3.910 - 4.110 0.154 - 0.162
E1 3.375 - 3.575 0.133 - 0.141
D2 4.824 - 4.976 0.190 - 0.196
E2 5.674 - 5.826 0.223 - 0.229
k 1.190 - 1.390 0.047 - 0.055
b 0.350 - 0.450 0.014 - 0.018
e 1.270TYP. 0.050TYP.
L 0.559 - 0.711 0.022 - 0.028
L1 0.424 - 0.576 0.017 - 0.023
H 0.574 - 0.726 0.023 - 0.029
10 - 12 10 - 12

2504101957_Siliup-SP60N08GNK_C22466775.pdf

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