Siliup SP40P65T2 40V P Channel MOSFET Suitable for DC DC Converters and Battery Switch Applications
Key Attributes
Model Number:
SP40P65T2
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
65mΩ@10V;85mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
41pF
Number:
1 P-Channel
Output Capacitance(Coss):
52pF
Pd - Power Dissipation:
900mW
Input Capacitance(Ciss):
520pF
Gate Charge(Qg):
9nC@10V
Mfr. Part #:
SP40P65T2
Package:
SOT-23
Product Description
Product Overview
The SP40P65T2 is a 40V P-Channel MOSFET from Siliup Semiconductor Technology Co., Ltd. Designed for high power and current handling, this surface mount device is suitable for applications such as battery switches and DC/DC converters. It offers a continuous drain current of -3A and features low on-resistance characteristics.
Product Attributes
- Brand: Siliup Semiconductor Technology Co., Ltd.
- Device Code: 40P65
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | - | - | -40 | - | - | V |
| RDS(on)TYP | - | @-10V | - | 65 | 85 | m |
| RDS(on)TYP | - | @-4.5V | - | 85 | 110 | m |
| ID | - | - | - | - | -3 | A |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | (Ta=25, unless otherwise noted) | -40 | - | - | V |
| Gate-Source Voltage | VGSS | (Ta=25, unless otherwise noted) | - | - | 20 | V |
| Continuous Drain Current | ID | (Ta=25, unless otherwise noted) | - | - | -3 | A |
| Pulse Drain Current | IDM | Tested | - | - | -12 | A |
| Power Dissipation | PD | (Ta=25, unless otherwise noted) | - | - | 0.9 | W |
| Thermal Resistance Junction-to-Ambient | RJA | (Ta=25, unless otherwise noted) | - | 138.8 | - | C/W |
| Storage Temperature Range | TSTG | (Ta=25, unless otherwise noted) | -55 | - | 150 | C |
| Operating Junction Temperature Range | TJ | (Ta=25, unless otherwise noted) | -55 | - | 150 | C |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250A | -40 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=-32V , VGS=0V | - | - | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=-250A | -1.0 | -1.5 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID =-3A | - | 65 | 85 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID =-2A | - | 85 | 110 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-15V , VGS=0V , f=1MHz | - | 520 | - | pF |
| Output Capacitance | Coss | - | - | 52 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 41 | - | pF |
| Total Gate Charge | Qg | VDS=-20V , VGS=-10V , ID=-3A | - | 9 | - | nC |
| Gate-Source Charge | Qgs | - | - | 1 | - | - |
| Gate-Drain Charge | Qg d | - | - | 2.5 | - | - |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=-20V VGS=-10V , RG=3.3 , ID=-3A | - | 4.2 | - | nS |
| Turn-On Rise Time | tr | - | - | 6 | - | - |
| Turn-Off Delay Time | td(off) | - | - | 26.8 | - | - |
| Turn-Off Fall Time | tf | - | - | 20.6 | - | - |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | - | - | -1.2 | V |
| Package Information (SOT-23) | ||||||
| Symbol | Dimensions In Millimeters | Min. | Max. | - | - | - |
| A | - | 0.90 | 1.15 | - | - | - |
| A1 | - | 0.00 | 0.10 | - | - | - |
| A2 | - | 0.90 | 1.05 | - | - | - |
| b | - | 0.30 | 0.50 | - | - | - |
| c | - | 0.08 | 0.15 | - | - | - |
| D | - | 2.80 | 3.00 | - | - | - |
| E1 | - | 1.20 | 1.40 | - | - | - |
| E | - | 2.25 | 2.55 | - | - | - |
| e | REF. | 0.95 | - | - | - | - |
| e1 | - | 1.80 | 2.00 | - | - | - |
| L | REF. | 0.55 | - | - | - | - |
| L1 | - | 0.30 | 0.50 | - | - | - |
| - | 0 | 8 | - | - | - | |
2504101957_Siliup-SP40P65T2_C41354815.pdf
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