Siliup SP40N01ACGTO N Channel 40V MOSFET Featuring Split Gate Trench Technology for Power Conversion

Key Attributes
Model Number: SP40N01ACGTO
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
260A
Operating Temperature -:
-55℃~+150℃
RDS(on):
0.85mΩ@10V;1.1mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.7V
Reverse Transfer Capacitance (Crss@Vds):
170pF
Number:
1 N-channel
Output Capacitance(Coss):
3.6nF
Input Capacitance(Ciss):
6.2nF
Pd - Power Dissipation:
320W
Gate Charge(Qg):
98nC@10V
Mfr. Part #:
SP40N01ACGTO
Package:
TOLL
Product Description

SP40N01ACGTO 40V N-Channel Power MOSFET

Product Overview

The SP40N01ACGTO is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), enabled by advanced split gate trench technology. This device is 100% tested for single pulse avalanche energy, making it suitable for PWM applications, hard switched and high frequency circuits, and power management. It is available in a TOLL package.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP40N01ACGTO
  • Technology: Advanced Split Gate Trench Technology
  • Channel Type: N-Channel
  • Package: TOLL

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Units
Product Summary
V(BR)DSS V(BR)DSS 40 V
RDS(on)TYP RDS(on) @10V 0.85 1.1 m
ID ID 260 A
RDS(on)TYP RDS(on) @4.5V 1.1 1.4 m
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage VDS 40 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current (Tc=25) ID 260 A
Continuous Drain Current (Tc=100) ID 175 A
Pulsed Drain Current IDM 1040 A
Single Pulse Avalanche Energy1 EAS 1122 mJ
Power Dissipation (Tc=25) PD 320 W
Thermal Resistance Junction-to-Case RJC 0.39 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 40 45 V
Drain-Source Leakage Current IDSS VDS=32V , VGS=0V , TJ=25 - - 1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1 1.7 2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=10V , ID=20A - 0.85 1.1 m
Static Drain-Source On-Resistance RDS(ON) VGS=4.5V , ID=20A - 1.1 1.4 m
Dynamic Characteristics
Input Capacitance Ciss VDS=20V , VGS=0V , f=1MHz - 6200 - pF
Output Capacitance Coss - 3600 - pF
Reverse Transfer Capacitance Crss - 170 - pF
Total Gate Charge Qg VDS=20V , VGS=10V , ID=20A - 98 - nC
Gate-Source Charge Qgs - 17 - nC
Gate-Drain Charge Qgd - 21 - nC
Switching Characteristics
Turn-On Delay Time Td(on) VDD=20V , VGS=10V , RG=1.6 ID=20A - 13.5 - nS
Rise Time Tr - 15.8 - nS
Turn-Off Delay Time Td(off) - 96 - nS
Fall Time Tf - 43 - nS
Diode Characteristics
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 260 A
Reverse Recovery Time Trr IS=20A, di/dt=200A/us, TJ=25 - 65 - nS
Reverse Recovery Charge Qrr - 37 - nC

Note: 1. The test condition is VDD=20V,VGS=10V,L=0.5mH,RG=25

Order Information

Device Package Unit/Tape
SP40N01ACGTO TOLL 2000

TOLL Package Information

Symbol Dimensions (mm)
Min. Nom. Max.
A 2.20 2.30 2.40
b 0.65 0.75 0.85
C 0.508 REF
D 10.25 10.40 10.55
D1 2.85 3.00 3.15
E 9.75 9.90 10.05
E1 9.65 9.80 9.95
E2 8.95 9.10 9.25
E3 7.25 7.40 7.55
e 1.20 BSC
F 1.05 1.20 1.35
H 11.55 11.70 11.85
H1 6.03 6.18 6.33
H2 6.85 7.00 7.15
H3 3.00 BSC
L 1.55 1.70 1.85
L1 0.55 0.7 0.85
L2 0.45 0.6 0.75
M 0.08 REF.
8 10 12
K 4.25 4.40 4.55

2506271720_Siliup-SP40N01ACGTO_C49257239.pdf
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