20V P Channel MOSFET with 1.4A Continuous Drain Current Siliup SP2101T3 SOT 323 Surface Mount Device
Key Attributes
Model Number:
SP2101T3
Product Custom Attributes
Drain To Source Voltage:
20V
Configuration:
-
Current - Continuous Drain(Id):
1.4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
65mΩ@4.5V;85mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
700mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
82pF
Number:
1 P-Channel
Output Capacitance(Coss):
120pF
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
640pF
Gate Charge(Qg):
3.3nC@2.5V
Mfr. Part #:
SP2101T3
Package:
SOT-323
Product Description
Product Overview
The SP2101T3 is a 20V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. designed for high power and current handling capabilities, making it suitable for applications such as battery switches and DC/DC converters. It features a surface mount package for convenient integration.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: P-Channel MOSFET
- Package: SOT-323
- Marking: TS1
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -20 | V | |||
| Static Drain-Source On-Resistance | RDS(on) | @-4.5V | 65 | m | ||
| Static Drain-Source On-Resistance | RDS(on) | @-2.5V | 85 | m | ||
| Continuous Drain Current | ID | -1.4 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | -20 | V | |||
| Gate-Source Voltage | VGSS | 12 | V | |||
| Continuous Drain Current | ID | -1.4 | A | |||
| Pulse Drain Current | IDM | Tested | -5.6 | A | ||
| Power Dissipation | PD | 350 | mW | |||
| Thermal Resistance Junction-to-Ambient | RJA | 357 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250A | -20 | - | V | |
| Drain-Source Leakage Current | IDSS | VDS=-16V , VGS=0V | - | - | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=12V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=-250A | -0.5 | -0.7 | -1.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-500mA | - | 65 | 100 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-2.5V , ID=-500mA | - | 85 | 140 | m |
| Input Capacitance | Ciss | VDS=-8V , VGS=0V , f=1MHz | - | 640 | - | pF |
| Output Capacitance | Coss | - | 120 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 82 | - | pF | |
| Total Gate Charge | Qg | VDS=-10V , VGS=-2.5V , ID=-3A | - | 3.3 | - | nC |
| Gate-Source Charge | Qgs | - | 0.7 | - | ||
| Gate-Drain Charge | Qg | - | 1.3 | - | ||
| Turn-On Delay Time | td(on) | VDD=-4V VGS=-4.5V , RG=6.2 , ID=-1A | - | 6.2 | - | nS |
| Turn-On Rise Time | tr | - | 15 | - | ||
| Turn-Off Delay Time | td(off) | - | 26 | - | ||
| Turn-Off Fall Time | tf | - | 18 | - | ||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | - | - | -1.2 | V |
| Package Information (SOT-323) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 0.900 - 1.100 | 0.035 - 0.043 | ||||
| A1 | 0.000 - 0.100 | 0.000 - 0.004 | ||||
| A2 | 0.900 - 1.000 | 0.035 - 0.039 | ||||
| b | 0.200 - 0.400 | 0.008 - 0.016 | ||||
| c | 0.080 - 0.150 | 0.003 - 0.006 | ||||
| D | 2.000 - 2.200 | 0.079 - 0.087 | ||||
| E | 1.150 - 1.350 | 0.045 - 0.053 | ||||
| E1 | 2.150 - 2.450 | 0.085 - 0.096 | ||||
| e | 0.650 TYP. | 0.026 TYP. | ||||
| e1 | 1.200 - 1.400 | 0.047 - 0.055 | ||||
| L | 0.525 REF. | 0.021 REF. | ||||
| L1 | 0.260 - 0.460 | 0.010 - 0.018 | ||||
| 0 - 8 | 0 - 8 | |||||
2504101957_Siliup-SP2101T3_C41354953.pdf
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