NPN switching transistor Slkor MMBT3904 with 60V collector base voltage and low saturation voltages

Key Attributes
Model Number: MMBT3904
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Transition Frequency(fT):
300MHz
Number:
1 NPN
Type:
NPN
Pd - Power Dissipation:
300mW
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
MMBT3904
Package:
SOT-23
Product Description

Product Overview

The MMBT3904 is an NPN Switching Transistor designed for general-purpose applications. It offers reliable performance with key electrical characteristics including DC current gain (hFE), collector-emitter saturation voltage (VCE(sat)), and base-emitter saturation voltage (VBE(sat)). This transistor is suitable for switching applications, as indicated by its switching characteristics such as delay time (td), rise time (tr), storage time (ts), and fall time (tf). It is available in a SOT-23 package.

Product Attributes

  • Model: MMBT3904
  • Transistor Type: NPN Switching Transistor
  • Package: SOT-23
  • Manufacturer: slkormicro.com

Technical Specifications

Characteristic Symbol Rating Unit Conditions
MAXIMUM RATINGS
Collector-Emitter Voltage VCEO 40 Vdc
Collector-Base Voltage VCBO 60 Vdc
Emitter-Base Voltage VEBO 6.0 Vdc
Collector Current-Continuous Ic 200 mAdc
THERMAL CHARACTERISTICS
Total Device Dissipation (FR-5 Board) PD 225 mW Derate above 25: 1.8 mW/
Total Device Dissipation (Alumina Substrate) PD 300 mW Derate above 25: 2.4 mW/
Thermal Resistance Junction to Ambient RJA 417 /W
Solder Temperature/Solder Time T/t 260/10 /S
Junction and Storage Temperature TJ, Tstg 150, -55 to +150
ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise noted)
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage V(BR)CEO 40 Vdc (Ic=1.0mAdc, IB=0)
Collector-Base Breakdown Voltage V(BR)CBO 60 Vdc (Ic=10Adc, IE=0)
Emitter-Base Breakdown Voltage V(BR)EBO 6.0 Vdc (IE=10Adc, Ic=0)
Base Cutoff Current IBEX 50 nAdc (VCE=30Vdc, VEB =3.0 Vdc)
Collector Cutoff Current ICEX 50 nAdc (VCE=30Vdc, VEB =3.0Vdc)
ON CHARACTERISTICS
DC Current Gain hPE 40 (Ic=0.1mAdc,VCE=1.0Vdc)
70 (Ic=1.0mAdc,VCE=1.0Vdc)
100 - 300 (Ic=10mAdc,VCE=1.0Vdc)
60 (Ic=50mAdc,VCE=1.0Vdc)
30 (Ic=100mAdc,VCE=1.0Vdc)
Collector-Emitter Saturation Voltage VCE(sat) 0.25 Vdc (Ic=10mAdc, IB=1.0mAdc)
0.4 Vdc (Ic=50mAdc, IB=5.0mAdc)
Base-Emitter Saturation Voltage VBE(sat) 0.65 - 0.85 Vdc (Ic=10mAdc, IB=1.0mAdc)
0.95 Vdc (Ic=50mAdc, IB=5.0mAdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product fT 300 MHz (Ic=10mAdc,VCE=-20Vdc,f=100MHz)
Output Capacitance Cobo 4.0 pF (VCB=5.0Vdc, IE=0, f=1.0MHz)
Input Capacitance Cibo 8.0 pF (VEB=0.5Vdc, IC=0, f=1.0MHz)
Input Impedance hie 1.0 - 10 k (VCE=10Vdc, IC=1.0mAdc, f=1.0KHz)
Voltage Feedback Ratio hre 0.5 - 8.0 10-4 (VCE=10Vdc, IC=1.0mAdc, f=1.0KHz)
Small-Signal Current Gain hfe 100 - 400 (VCE=10Vdc, IC=1.0mAdc, f=1.0KHz)
Output Admittance hoe 1.0 - 40 mhos (VCE=10Vdc, IC=1.0mAdc, f=1.0KHz)
Noise Figure NF 5.0 dB (VCE=5.0Vdc, IC=100Adc,Rs=1.0 kf=1.0KHz)
SWITCHING CHARACTERISTICS
Delay Time td 35 ns (VCC=3.0Vdc,VBE=0.5Vdc, IC=10mAdc, IB1=1.0mAdc)
Rise Time tr 35 ns
Storage Time ts 225 ns (VCC=3.0Vdc,IC=10mAdc, IB1=IB2=1.0mAdc)
Fall Time tf 75 ns
Package Information (SOT-23)
Symbol MIN. MAX. Unit
A 0.900 1.150 mm
A1 0.000 0.100 mm
A2 0.900 1.050 mm
b 0.300 0.500 mm
c 0.080 0.150 mm
D 2.800 3.000 mm
E 1.200 1.400 mm
E1 2.250 2.550 mm
e 0.950 TYP mm
e1 1.800 2.000 mm
L 0.550 REF mm
L1 0.300 0.500 mm
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2409302302_Slkor-MMBT3904_C3041294.pdf

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