High power 60V N Channel MOSFET Siliup SP60N1K1T2 surface mount device for battery switch applications
Key Attributes
Model Number:
SP60N1K1T2
Product Custom Attributes
Drain To Source Voltage:
60V
Configuration:
-
Current - Continuous Drain(Id):
300mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.1Ω@10V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
5pF
Number:
-
Output Capacitance(Coss):
25pF
Pd - Power Dissipation:
225mW
Input Capacitance(Ciss):
50pF
Gate Charge(Qg):
1.4nC@4.5V
Mfr. Part #:
SP60N1K1T2
Package:
SOT-23
Product Description
Product Overview
The SP60N1K1T2 is a 60V N-Channel MOSFET from Siliup Semiconductor Technology Co., Ltd. Engineered for high power and current handling, this surface mount device features ESD protection up to 2KV. It is ideally suited for applications such as battery switches and DC/DC converters.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: SP60N1K1T2
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | - | - | - | - | 60 | V |
| RDS(on)TYP | - | @10V | - | 1.1 | - | |
| RDS(on)TYP | - | @4.5V | - | 1.4 | - | |
| ID | - | - | - | - | 300 | mA |
| Features | ||||||
| - | - | - | High power and current handing capability | |||
| - | - | - | Surface mount package | |||
| - | - | - | ESD protected 2KV | |||
| Applications | ||||||
| - | - | - | Battery Switch | |||
| - | - | - | DC/DC Converter | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | - | - | - | 60 | V |
| Gate-Source Voltage | VGSS | - | - | 20 | - | V |
| Continuous Drain Current | ID | - | - | - | 300 | mA |
| Pulse Drain Current | IDM | Tested | - | - | 1200 | mA |
| Power Dissipation | PD | - | - | - | 225 | mW |
| Thermal Resistance Junction-to-Ambient | RJA | - | - | - | 555 | C/W |
| Storage Temperature Range | TSTG | - | -55 | - | 150 | C |
| Operating Junction Temperature Range | TJ | - | -55 | - | 150 | C |
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 60 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=48V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 1 | uA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 1 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V, ID =500mA | - | 1.1 | 3 | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =4.5V, ID =200mA | - | 1.4 | 4 | |
| Input Capacitance | Ciss | VDS=25V , VGS=0V , f=1MHz | - | 50 | - | pF |
| Output Capacitance | Coss | - | - | 25 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 5 | - | pF |
| Total Gate Charge | Qg | VDS=10V , VGS=4.5V , ID=1A | - | 1.4 | - | nC |
| Gate-Source Charge | Qgs | - | - | 0.5 | - | - |
| Gate-Drain Charge | Qg d | - | - | 0.2 | - | - |
| Turn-On Delay Time | td(on) | VDD=25V VGS=10V , RG=25 , ID=1A | - | 4 | - | nS |
| Turn-On Rise Time | tr | - | - | 18 | - | - |
| Turn-Off Delay Time | td(off) | - | - | 10 | - | - |
| Turn-Off Fall Time | tf | - | - | 24 | - | - |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Package Information (SOT-23) | ||||||
| Symbol | Dimensions In Millimeters | Min. | Max. | - | - | - |
| A | - | 0.90 | 1.15 | - | - | - |
| A1 | - | 0.00 | 0.10 | - | - | - |
| A2 | - | 0.90 | 1.05 | - | - | - |
| b | - | 0.30 | 0.50 | - | - | - |
| c | - | 0.08 | 0.15 | - | - | - |
| D | - | 2.80 | 3.00 | - | - | - |
| E | - | 1.20 | 1.40 | - | - | - |
| E1 | - | 2.25 | 2.55 | - | - | - |
| e | REF. | 0.95 | - | - | - | - |
| e1 | - | 1.80 | 2.00 | - | - | - |
| L | REF. | 0.55 | - | - | - | - |
| L1 | - | 0.30 | 0.50 | - | - | - |
| - | 0 | 8 | - | - | - | |
2504101957_Siliup-SP60N1K1T2_C41354929.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
Glass passivated chip diode YONGYUTAI MB8S offering performance in power supply and rectification circuits
Product OverviewThis series of glass passivated chip junction diodes offers a wide range of reverse voltage capabilities from 100V to 1000V, with a forward current of 0.8A and high surge current capability. Designed for surface mount applications, these diodes are suitable for various power supply ...
Integrated bias resistor digital transistor YANGJIE DTC143ECA suitable for surface mount and inverter circuit
Product OverviewThe DTC143ECA is a digital transistor with built-in resistors, designed for surface mount applications. Its integrated bias resistors simplify inverter circuit configuration by eliminating the need for external input resistors. This component is manufactured by Yangzhou Yangjie ...
Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability
Product OverviewThe MG50HF12TLC1 S-M392 is a high-performance IGBT module designed for inverter applications, AC/DC servo drive amplifiers, UPS systems, and soft switching welding machines. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
