High Current Handling Siliup SP3400T2 30V N Channel MOSFET Low RDSon for Power Conversion Solutions
Key Attributes
Model Number:
SP3400T2
Product Custom Attributes
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
5.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
25mΩ@10V
Gate Threshold Voltage (Vgs(th)):
950mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
53pF
Number:
1 N-channel
Output Capacitance(Coss):
68pF
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
765pF
Gate Charge(Qg):
18nC@10V
Mfr. Part #:
SP3400T2
Package:
SOT-23
Product Description
Product Overview
The SP3400T2 is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capabilities in a surface mount package, making it suitable for applications such as battery switches and DC/DC converters. Key electrical characteristics include a low RDS(on) at various gate-source voltages (25m @ 10V, 30m @ 4.5V, 40m @ 2.5V) and a continuous drain current of 5.8A.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: N-Channel MOSFET
- Package: SOT-23
- Marking Code: 3400
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | - | - | - | 30 | V |
| Gate-Source Voltage | VGSS | - | - | ±12 | ±12 | V |
| Continuous Drain Current | ID | - | - | - | 5.8 | A |
| Pulse Drain Current | IDM | - | - | - | 23.2 | A |
| Power Dissipation | PD | (Ta=25) | - | - | 1.3 | W |
| Thermal Resistance Junction-to-Ambient | RJA | - | - | - | 96 | C/W |
| Storage Temperature Range | TSTG | - | -55 | - | 150 | C |
| Operating Junction Temperature Range | TJ | - | -55 | - | 150 | C |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250µA | 30 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=24V , VGS=0V | - | - | 1 | µA |
| Gate-Source Leakage Current | IGSS | VGS=±12V , VDS=0V | - | - | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250µA | 0.6 | 0.95 | 1.3 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID =5.8A | - | 25 | 35 | mΩ |
| VGS=4.5V , ID =5A | - | 30 | 40 | mΩ | ||
| VGS=2.5V , ID =4A | - | 40 | 50 | mΩ | ||
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | - | 765 | - | pF |
| Output Capacitance | Coss | - | - | 68 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 53 | - | pF |
| Total Gate Charge | Qg | VDS=15V , VGS=10V , ID=3A | - | 18 | - | nC |
| Gate-Source Charge | Qgs | - | - | 3 | - | nC |
| Gate-Drain Charge | Qgd | - | - | 2.2 | - | nC |
| Switching Characteristics | - | VDD=15V VGS=10V , RG=3Ω , ID=3A | - | 5 | - | nS |
| Turn-On Rise Time | tr | - | 11 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 25 | - | nS | |
| Turn-Off Fall Time | tf | - | 3 | - | nS | |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Symbol | Dimensions In Millimeters | Min. | Max. |
|---|---|---|---|
| A | - | 0.90 | 1.15 |
| A1 | - | 0.00 | 0.10 |
| A2 | - | 0.90 | 1.05 |
| b | - | 0.30 | 0.50 |
| c | - | 0.08 | 0.15 |
| D | - | 2.80 | 3.00 |
| E | - | 1.20 | 1.40 |
| E1 | - | 2.25 | 2.55 |
| e | REF. | - | 0.95 |
| e1 | - | 1.80 | 2.00 |
| L | REF. | - | 0.55 |
| L1 | - | 0.30 | 0.50 |
| θ | - | 0° | 8° |
2504101957_Siliup-SP3400T2_C41354919.pdf
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