20V N Channel MOSFET Siliup SP2620F with 1.2A Drain Current and Low Static Drain Source On Resistance
Key Attributes
Model Number:
SP2620F
Product Custom Attributes
Pd - Power Dissipation:
150mW
Drain To Source Voltage:
20V
Configuration:
-
Current - Continuous Drain(Id):
1.2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
75mΩ@4.5V;90mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
650mV@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
21pF
Number:
1 N-channel
Output Capacitance(Coss):
35pF
Input Capacitance(Ciss):
226pF
Gate Charge(Qg):
4nC@4.5V
Mfr. Part #:
SP2620F
Package:
SOT-523
Product Description
Product Overview
The SP2620F is a 20V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high power and current handling capabilities. It is suitable for surface mount applications and is ideal for use as a battery switch and in DC/DC converters. The device offers robust performance with key electrical characteristics optimized for efficient operation.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Line: SP2620F
- Channel Type: N-Channel
- Package: SOT-523
- Device Code: 262
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 20 | V | |||
| Static Drain-Source On-Resistance | RDS(on) | @4.5V | 75 | 90 | m | |
| Continuous Drain Current | ID | 1.2 | A | |||
| Static Drain-Source On-Resistance | RDS(on) | @2.5V | 90 | 110 | m | |
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | 20 | V | |||
| Gate-Source Voltage | VGSS | 12 | V | |||
| Continuous Drain Current | ID | 1.2 | A | |||
| Pulse Drain Current | IDM | Tested | 4.8 | A | ||
| Power Dissipation | PD | 150 | mW | |||
| Thermal Resistance Junction-to-Ambient | RJA | 833 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 20 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=16V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 0.4 | 0.65 | 1 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID =1A | - | 75 | 90 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=2.5V, ID =0.5A | - | 90 | 110 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=10V , VGS=0V , f=1MHz | - | 226 | - | pF |
| Output Capacitance | Coss | - | 35 | - | ||
| Reverse Transfer Capacitance | Crss | - | 21 | - | ||
| Total Gate Charge | Qg | VDS=10V , VGS=4.5V , ID=1.2A | - | 4.0 | - | nC |
| Gate-Source Charge | Qgs | - | 0.85 | - | ||
| Gate-Drain Charge | Qg d | - | 0.67 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=10V VGS=4.5V , RG=6 , ID=1.2A | - | 7 | - | nS |
| Turn-On Rise Time | tr | - | 55 | - | ||
| Turn-Off Delay Time | td(off) | - | 14 | - | ||
| Turn-Off Fall Time | tf | - | 43 | - | ||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Package Information (SOT-523) | ||||||
| Symbol | Dimensions In Millimeters | Min | Max | |||
| A | 0.700 | 0.900 | ||||
| A1 | 0.000 | 0.100 | ||||
| A2 | 0.700 | 0.800 | ||||
| b1 | 0.150 | 0.250 | ||||
| b2 | 0.250 | 0.350 | ||||
| C | 0.100 | 0.200 | ||||
| D | 1.500 | 1.700 | ||||
| E | 0.700 | 0.900 | ||||
| E1 | 1.450 | 1.750 | ||||
| e | 0.500 TYP | |||||
| e1 | 0.900 | 1.100 | ||||
| L | 0.400 REF | |||||
| L1 | 0.260 | 0.460 | ||||
| 0 | 8 | |||||
2504101957_Siliup-SP2620F_C41354911.pdf
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