Low On Resistance N Channel MOSFET 30 Volt Siliup SP30N15NJ Designed for Power Management Applications
Key Attributes
Model Number:
SP30N15NJ
Product Custom Attributes
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-55℃~+150℃
RDS(on):
26mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
59pF
Number:
1 N-channel
Output Capacitance(Coss):
77pF
Pd - Power Dissipation:
13W
Input Capacitance(Ciss):
583pF
Gate Charge(Qg):
6nC@10V
Mfr. Part #:
SP30N15NJ
Package:
PDFNWB-8L(3.3x3.3)
Product Description
Product Overview
The SP30N15NJ is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching speed, low on-resistance (15m typ. at 10V and 20m typ. at 4.5V), and is 100% tested for single pulse avalanche energy. This MOSFET is suitable for applications such as DC-DC converters and power management.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: N-Channel MOSFET
- Device Code: 30N15
- Package: PDFN3X3-8L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | V(BR)DSS | 30 | V | |||
| RDS(on)TYP | RDS(on) | @10V | 15 | 20 | m | |
| RDS(on)TYP | RDS(on) | @4.5V | 20 | 26 | m | |
| ID | ID | 12 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | (Ta=25,unless otherwise noted) | 30 | V | ||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current | ID | (Tc=25C) | 12 | A | ||
| Continuous Drain Current | ID | (Tc=100C) | 8 | A | ||
| Pulse Drain Current Tested | IDM | 48 | A | |||
| Single Pulse Avalanche Energy | EAS | 20 | mJ | |||
| Power Dissipation | PD | (Tc=25C) | 13 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 9.6 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 30 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=24V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.2 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=8A | - | 15 | 20 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=6A | - | 20 | 26 | m |
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | - | 583 | - | pF |
| Output Capacitance | Coss | - | 77 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 59 | - | pF | |
| Total Gate Charge | Qg | VDS=15V , VGS=10V , ID=7A | - | 6 | - | nC |
| Gate-Source Charge | Qgs | - | 2.2 | - | ||
| Gate-Drain Charge | Qg | - | 2 | - | ||
| Turn-On Delay Time | Td(on) | VDD=15V, VGS=10V , RG=3, ID=7A | - | 1.2 | - | nS |
| Rise Time | Tr | - | 40 | - | ||
| Turn-Off Delay Time | Td(off) | - | 18 | - | nS | |
| Fall Time | Tf | - | 7.2 | - | ||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Diode Continuous Current | IS | - | - | 12 | A | |
| Reverse recover time | Trr | IS=5A, di/dt=100A/us, Tj=25 | - | 8 | - | nS |
| Reverse recovery charge | Qrr | - | 2 | - | nC | |
| Package Information (PDFN3X3-8L) | ||||||
| Symbol | Dimensions In Millimeters | Min. | Max. | Dimensions In Inches | ||
| A | 0.650 | 0.850 | 0.026 | 0.033 | ||
| A1 | 0.152 | REF. | 0.006 | REF. | ||
| A2 | 0~0.05 | 0~0.002 | ||||
| D | 2.900 | 3.100 | 0.114 | 0.122 | ||
| D1 | 2.300 | 2.600 | 0.091 | 0.102 | ||
| E | 2.900 | 3.100 | 0.114 | 0.122 | ||
| E1 | 3.150 | 3.450 | 0.124 | 0.136 | ||
| E2 | 1.535 | 1.935 | 0.060 | 0.076 | ||
| b | 0.200 | 0.400 | 0.008 | 0.016 | ||
| e | 0.550 | 0.750 | 0.022 | 0.030 | ||
| L | 0.300 | 0.500 | 0.012 | 0.020 | ||
| L1 | 0.180 | 0.480 | 0.007 | 0.019 | ||
| L2 | 0~0.100 | 0~0.004 | ||||
| L3 | 0~0.100 | 0~0.004 | ||||
| H | 0.315 | 0.515 | 0.012 | 0.020 | ||
| 9 | 13 | 9 | 13 | |||
2504101957_Siliup-SP30N15NJ_C41354877.pdf
Related Products
Surface Mounted Rectifier ZHIDE US3M Series High Voltage 1000V Rectifier for Electronic Circuits
Product OverviewThe US3A-US3M series are surface-mounted high-efficiency rectifiers designed for general-purpose applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding environments. These rectifiers are guaranteed for ...
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages
Product OverviewThe DTC144EUAQ is an NPN Digital Transistor with built-in resistors, designed to simplify circuit design by eliminating the need for external input resistors. It is ideal for configuring inverter circuits and offers easy setup for on/off conditions, reducing component count and board ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
