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quality 250V N Channel Power MOSFET Siliup SP025N18GHTQ with Low Gate Charge and Fast Switching Performance factory
quality 250V N Channel Power MOSFET Siliup SP025N18GHTQ with Low Gate Charge and Fast Switching Performance factory

250V N Channel Power MOSFET Siliup SP025N18GHTQ with Low Gate Charge and Fast Switching Performance

Key Attributes
Model Number: SP025N18GHTQ
Product Custom Attributes
Drain To Source Voltage:
250V
Current - Continuous Drain(Id):
60A
RDS(on):
18mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
18pF
Number:
1 N-channel
Output Capacitance(Coss):
290pF
Input Capacitance(Ciss):
9.824nF
Pd - Power Dissipation:
280W
Gate Charge(Qg):
70nC@10V
Mfr. Part #:
SP025N18GHTQ
Package:
TO-220-3L
Product Description

Siliup Semiconductor SP025N18GHTQ: 250V N-Channel Power MOSFET

The SP025N18GHTQ is a 250V N-Channel Power MOSFET from Siliup Semiconductor, designed for high-performance applications. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy, making it suitable for PWM applications, hard switched and high frequency circuits, and power management systems.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP025N18GHTQ
  • Technology: Advanced Split Gate Trench Technology
  • Package: TO-220-3L (Pinout: 1:G, 2:D, 3:S)

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Unit
Product Summary
Drain-Source Voltage V(BR)DSS 250 V
RDS(on) Typ RDS(on)TYP @10V 18 m
Continuous Drain Current ID 60 A
Absolute Maximum Ratings
Drain-Source Voltage VDS (Ta=25) 250 V
Gate-Source Voltage VGS (Ta=25) 20 V
Continuous Drain Current ID (Tc=25) 60 A
Continuous Drain Current ID (Tc=100) 40 A
Pulsed Drain Current IDM 240 A
Single Pulse Avalanche Energy EAS 841 mJ
Power Dissipation PD (Tc=25) 280 W
Thermal Resistance Junction-to-Case RJC 0.45 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 250 - - V
Drain Cut-Off Current IDSS VDS=200V , VGS=0V , TJ=25 - - 1 A
Gate Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 2.5 3.5 4.5 V
Drain-Source ON Resistance RDS(ON) VGS=10V , ID=20A - 18 23 m
Dynamic Characteristics
Input Capacitance Ciss VDS=125V , VGS=0V , f=1MHz - 9824 - pF
Output Capacitance Coss - 290 - pF
Reverse Transfer Capacitance Crss - 18 - pF
Total Gate Charge Qg VDS=125V , VGS=10V , ID=20A - 70 - nC
Gate-Source Charge Qgs - 24 - nC
Gate-Drain Charge Qgd - 22 - nC
Switching Characteristics
Turn-On Delay Time td(on) VDD=125V , VGS=10V , RG=10 ID=20A - 33 - nS
Rise Time tr - 15 - nS
Turn-Off Delay Time td(off) - 61 - nS
Fall Time tf - 8 - nS
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 60 A
Reverse Recovery Time Trr IS=20A, di/dt=200A/us, TJ=25 - 168 - nS
Reverse Recovery Charge Qrr - 795 - nC

Package Information (TO-220-3L)

Symbol Dimensions In Millimeters Dimensions In Inches
Min. Max. Min. Max.
A 4.400 4.600 0.173 0.181
A1 2.250 2.550 0.089 0.100
b 0.710 0.910 0.028 0.036
b1 1.170 1.370 0.046 0.054
c 0.330 0.650 0.013 0.026
c1 1.200 1.400 0.047 0.055
D 9.910 10.250 0.390 0.404
E 8.950 9.750 0.352 0.384
E1 12.650 13.050 0.498 0.514
e 2.540 TYP. 0.100 TYP.
e1 4.980 5.180 0.196 0.204
F 2.650 2.950 0.104 0.116
H 7.900 8.100 0.311 0.319
h 0.000 0.300 0.000 0.012
L 12.900 13.400 0.508 0.528
L1 2.850 3.250 0.112 0.128
V 6.900 REF. 0.276 REF.
3.400 3.800 0.134 0.150

2504101957_Siliup-SP025N18GHTQ_C22466819.pdf

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