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quality Surface mount n channel mosfet Siliup SP010N110GT2 with 100 volt drain source voltage in sot 23 package factory
quality Surface mount n channel mosfet Siliup SP010N110GT2 with 100 volt drain source voltage in sot 23 package factory

Surface mount n channel mosfet Siliup SP010N110GT2 with 100 volt drain source voltage in sot 23 package

Key Attributes
Model Number: SP010N110GT2
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
110mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.8V@250uA
Reverse Transfer Capacitance (Crss@Vds):
1.4pF
Number:
1 N-channel
Output Capacitance(Coss):
29pF
Pd - Power Dissipation:
1.2W
Input Capacitance(Ciss):
206pF
Gate Charge(Qg):
4.3nC@10V
Mfr. Part #:
SP010N110GT2
Package:
SOT-23
Product Description

Product Overview

The SP010N110GT2 is a 100V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. This device offers high power and current handling capability in a surface mount SOT-23 package. It is suitable for applications such as battery switches and DC/DC converters.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Type: N-Channel MOSFET
  • Package: SOT-23
  • Device Code: SP010N110GT2
  • Marking: 1003

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
V(BR)DSS V(BR)DSS 100 V
RDS(on)TYP RDS(on)TYP @10V 110 m
RDS(on)TYP RDS(on)TYP @4.5V 160 m
ID ID 3 A
Absolute Maximum Ratings
Drain-Source Voltage VDSS 100 V
Gate-Source Voltage VGSS 20 V
Continuous Drain Current ID 3 A
Pulse Drain Current IDM Tested 12 A
Power Dissipation PD 1.2 W
Thermal Resistance Junction-to-Ambient RJA 104 C/W
Storage Temperature Range TSTG -55 150 C
Operating Junction Temperature Range TJ -55 150 C
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250A 100 - - V
Drain-Source Leakage Current IDSS VDS=60V , VGS=0V - - 1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VDS=VGS , ID=250A 1.0 1.8 2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS =10V, ID =3A - 110 140 m
Static Drain-Source On-Resistance RDS(ON) VGS =4.5V, ID =2A - 160 300 m
Dynamic Characteristics
Input Capacitance Ciss VDS=50V , VGS=0V , f=1MHz - 206 - pF
Output Capacitance Coss - 29 -
Reverse Transfer Capacitance Crss - 1.4 -
Total Gate Charge Qg VDS=50V , VGS=10V , ID=3A - 4.3 - nC
Gate-Source Charge Qgs - 1.5 -
Gate-Drain Charge Qg - 1.1 -
Switching Characteristics
Turn-On Delay Time td(on) VDD=50V VGS=10V , RG=2, ID=3A - 14.7 - nS
Turn-On Rise Time tr - 3.5 -
Turn-Off Delay Time td(off) - 20.9 -
Turn-Off Fall Time tf - 2.7 -
Source-Drain Diode Characteristics
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
SOT-23 Package Information
Symbol Dimensions In Millimeters
A 0.90 1.15
A1 0.00 0.10
A2 0.90 1.05
b 0.30 0.50
c 0.08 0.15
D 2.80 3.00
E1 1.20 1.40
E 2.25 2.55
e 0.95 REF.
e1 1.80 2.00
L 0.55 REF.
L1 0.30 0.50
0 8

2504101957_Siliup-SP010N110GT2_C41349580.pdf

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