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quality NPN Transistor Slkor BC849B SOT23 Package Low Voltage and Low Current Suitable for Electronic Devices factory
quality NPN Transistor Slkor BC849B SOT23 Package Low Voltage and Low Current Suitable for Electronic Devices factory

NPN Transistor Slkor BC849B SOT23 Package Low Voltage and Low Current Suitable for Electronic Devices

Key Attributes
Model Number: BC849B
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
15nA
DC Current Gain:
200@2mA,5V
Transition Frequency(fT):
100MHz
Type:
NPN
Vce Saturation(VCE(sat)):
600mV
Pd - Power Dissipation:
250mW
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
30V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
BC849B
Package:
SOT-23
Product Description

Product Overview

The BC849-BC850 series are NPN transistors designed for low current and low voltage applications. These transistors offer features such as low current consumption (max. 100 mA) and low operating voltage (max. 45 V). They are suitable for various electronic circuits requiring reliable amplification and switching capabilities within these parameters.

Product Attributes

  • Type: NPN Transistors
  • Brand: slkormicro (indicated by URL)
  • Package: SOT-23

Technical Specifications

Parameter Symbol Rating/Conditions Unit Min Typ Max
Absolute Maximum Ratings
Emitter-Base Voltage VEBO Ta = 25 C V 5
Collector Current (DC) IC Ta = 25 C mA 100
Peak Collector Current ICM Ta = 25 C mA 200
Peak Base Current IBM Ta = 25 C mA 200
Total Power Dissipation Ptot Ta = 25 C (Transistor mounted on an FR4 printed-circuit board) mW 250
Storage Temperature Tstg C -65 150
Junction Temperature Tj C 150
Operating Ambient Temperature Tamb C -65 150
Thermal Resistance Junction to Ambient Rth(j-a) Ta = 25 C (Transistor mounted on an FR4 printed-circuit board) K/W 500
Collector-Base Voltage VCBO V 30
Collector-Emitter Voltage VCEO V 45
Electrical Characteristics
Emitter Cut-off Current IEBO IE = 0; VCB = 30 V; Ta = 25 C nA 15
Emitter Cut-off Current IEBO IE = 0; VCB = 30 V; Tj = 150 C A 5
Collector Cut-off Current ICBO IC = 0; VEB = 5 V nA 100
DC Current Gain hFE IC = 10 mA; IB = 0.5 mA 250
DC Current Gain hFE IC = 100 mA; IB = 5 mA 600
Base-Emitter Saturation Voltage VBEsat IC = 10 mA; IB = 0.5 mA mV 700
Base-Emitter Saturation Voltage VBEsat IC = 100 mA; IB = 5 mA mV 900
Collector-Emitter Saturation Voltage VCEsat IC = 2 mA; VCE = 5 V; hFE mV 660 700
Collector-Emitter Saturation Voltage VCEsat IC = 10 mA; VCE = 5 V; hFE mV 770
Base-Emitter Voltage VBE IC = 2 mA; VCE = 5 V; *2 mV 580
Collector Capacitance Cc IE = ie = 0; VCB = 10 V; f = 1 MHz pF 2.5
Emitter Capacitance Ce IC = ic = 0; VEB = 500 mV; f = 1 MHz pF 11
Transition Frequency fT IC = 10 mA; VCE = 5 V; f = 100 MHz MHz 100
Noise Figure F IC = 200 A; VCE = 5 V; RS = 2 k, f = 10 Hz to 15.7 kHz dB 4
Noise Figure F IC = 200 A; VCE = 5 V; RS = 2 k, f = 1 kHz; B = 200 Hz dB 4
Model Specific DC Current Gain (hFE)
Model IC = 10 mA; IB = 0.5 mA Min Typ Max
BC849B / BC850B 240
BC849C / BC850C 450
Model IC = 100 mA; IB = 5 mA Min Typ Max
BC849B / BC850B 200 290 450
BC849C / BC850C 420 520 800
Dimensions (mm)
Dimension Symbol Value Unit
Length A 1.1 mm 0.9 1.4
Height (max) A1 0.1 mm
Width bp 0.48 mm 0.38 0.58
Width D 3.0 mm 2.8 3.1
Width E 2.5 mm 2.1 2.7
Width e 1.9 mm
Width e1 1.2 mm 0.95 1.45
Height Lp 0.55 mm 0.45 0.65
Height Q 0.15 mm 0.10 0.20
Width w 0.45 mm 0.40 0.50
Height v 0.1 mm 0.25
Classification Marking BC849B: 2B, BC849C: 2C, BC850B: 2F, BC850C: 2G

2210091830_Slkor-BC849B_C5185920.pdf

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