High Current 60V N Channel MOSFET Siliup 2SK3019 Featuring 2KV ESD Protection for Surface Mount Applications
Key Attributes
Model Number:
2SK3019
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
100mA
RDS(on):
2Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2.5pF
Number:
1 N-channel
Output Capacitance(Coss):
6pF
Input Capacitance(Ciss):
12pF
Pd - Power Dissipation:
150mW
Gate Charge(Qg):
1.34nC@15V
Mfr. Part #:
2SK3019
Package:
SOT-523
Product Description
Product Overview
The 2SK3019 is a 60V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. This surface-mount device offers high power and current handling capability, making it suitable for applications such as battery switches and DC/DC converters. It features ESD protection up to 2KV.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Line: Ver-1.2
- Package Type: SOT-523
- ESD Protection: 2KV
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 60 | V | |||
| Static Drain-Source On-Resistance | RDS(on) | VGS=10V | 2 | |||
| Static Drain-Source On-Resistance | RDS(on) | VGS=4.5V | 2.5 | |||
| Continuous Drain Current | ID | 100 | mA | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | (Ta=25, unless otherwise noted) | 60 | V | ||
| Gate-Source Voltage | VGSS | (Ta=25, unless otherwise noted) | 20 | V | ||
| Continuous Drain Current | ID | (Ta=25, unless otherwise noted) | 100 | mA | ||
| Pulse Drain Current | IDM | (Tested) | 400 | mA | ||
| Power Dissipation | PD | (Ta=25, unless otherwise noted) | 150 | mW | ||
| Thermal Resistance Junction-to-Ambient | RJA | (Ta=25, unless otherwise noted) | 833 | C/W | ||
| Storage Temperature Range | TSTG | (Ta=25, unless otherwise noted) | -55 | 150 | C | |
| Operating Junction Temperature Range | TJ | (Ta=25, unless otherwise noted) | -55 | 150 | C | |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 60 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=48V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 10 | uA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 0.7 | 1 | 1.45 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V, ID =200mA | - | 2 | 5 | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =4.5V, ID =100mA | - | 2.5 | 8 | |
| Input Capacitance | Ciss | VDS=25V , VGS=0V , f=1MHz | - | 12 | - | pF |
| Output Capacitance | Coss | VDS=25V , VGS=0V , f=1MHz | - | 6 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=25V , VGS=0V , f=1MHz | - | 2.5 | - | pF |
| Total Gate Charge | Qg | VDS=10V , VGS=15V , ID=1A | - | 1.34 | - | nC |
| Gate-Source Charge | Qgs | VDS=10V , VGS=15V , ID=1A | - | 0.29 | - | |
| Gate-Drain Charge | Qg | VDS=10V , VGS=15V , ID=1A | - | 0.2 | - | |
| Turn-On Delay Time | td(on) | VDD=15V VGS=10V , RG=2.3 , ID=1A | - | 5 | - | nS |
| Turn-On Rise Time | tr | VDD=15V VGS=10V , RG=2.3 , ID=1A | - | 18 | - | |
| Turn-Off Delay Time | td(off) | VDD=15V VGS=10V , RG=2.3 , ID=1A | - | 8 | - | |
| Turn-Off Fall Time | tf | VDD=15V VGS=10V , RG=2.3 , ID=1A | - | 14 | - | |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Package Information (SOT-523) | ||||||
| Symbol | Dimensions In Millimeters | Min | Max | |||
| A | 0.700 | 0.900 | ||||
| A1 | 0.000 | 0.100 | ||||
| A2 | 0.700 | 0.800 | ||||
| b1 | 0.150 | 0.250 | ||||
| b2 | 0.250 | 0.350 | ||||
| C | 0.100 | 0.200 | ||||
| D | 1.500 | 1.700 | ||||
| E | 0.700 | 0.900 | ||||
| E1 | 1.450 | 1.750 | ||||
| e | 0.500 (TYP) | |||||
| e1 | 0.900 | 1.100 | ||||
| L | 0.400 (REF) | |||||
| L1 | 0.260 | 0.460 | ||||
| 0 | 8 | |||||
2504101957_Siliup-2SK3019_C41349573.pdf
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