60V N Channel Power MOSFET Siliup SP60N03GHNK featuring low gate charge and in PDFN5X6 8L package
Key Attributes
Model Number:
SP60N03GHNK
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
100A
RDS(on):
2.8mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
41pF
Number:
1 N-channel
Output Capacitance(Coss):
975pF
Pd - Power Dissipation:
105W
Input Capacitance(Ciss):
4.25nF
Gate Charge(Qg):
42nC@10V
Mfr. Part #:
SP60N03GHNK
Package:
PDFN-8L(5x6)
Product Description
Product Overview
The SP60N03GHNK is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for hard switched and high frequency circuits, as well as uninterruptible power supplies. It is available in a PDFN5X6-8L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Line: Power MOSFET
- Channel Type: N-Channel
- Technology: Advanced Split Gate Trench Technology
- Package: PDFN5X6-8L
- Marking Code: 60N03GH
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | V(BR)DSS | 60 | V | |||
| RDS(on)TYP | RDS(on) | @10V | 2.8 | m | ||
| ID | ID | 100 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 60 | V | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | ||
| Continuous Drain Current (Tc=25C) | ID | (Tc=25C) | 100 | A | ||
| Continuous Drain Current (Tc=100C) | ID | (Tc=100C) | 67 | A | ||
| Pulse Drain Current Tested | IDM | 400 | A | |||
| Single Pulse Avalanche Energy1 | EAS | 841 | mJ | |||
| Power Dissipation (Tc=25C) | PD | (Tc=25C) | 105 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 1.19 | C/W | |||
| Maximum Junction Temperature | TJ | -55 | 150 | C | ||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250mA | 60 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=48V, VGS=0V | - | - | 1 | uA |
| Gate Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250uA | 2 | 2.5 | 4 | V |
| Drain-Source On-state Resistance | RDS(ON) | VGS=10V, ID=20A | - | 2.8 | 3.5 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VGS=0V, VDS=30V,F=1MHz | - | 4250 | - | pF |
| Output Capacitance | Coss | - | 975 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 41 | - | pF | |
| Total Gate Charge | Qg | VDS=30V, VGS=10V, ID=20A | - | 42 | - | nC |
| Gate-Source Charge | Qgs | - | 12 | - | nC | |
| Gate-Drain Charge | Qgd | - | 10 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=30V, ID=20A, VGS=10V, RG=3 | - | 13.5 | - | nS |
| Rise Time | tr | - | 96 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 40 | - | nS | |
| Fall Time | tf | - | 115 | - | nS | |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 100 | A | |
| Reverse Recovery Time | Trr | IS=60 A,di/dt=100 A/sTJ=25 | - | 35 | - | nS |
| Reverse Recovery Charge | Qrr | - | 30 | - | nC | |
1 The test condition is VDD=30V, VGS=10V, L=0.5mH, RG=25
Package Information (PDFN5X6-8L)
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 0.900 | 1.000 | 0.035 | 0.039 |
| A3 | 0.254REF. | 0.010REF. | ||
| D | 4.944 | 5.096 | 0.195 | 0.201 |
| E | 5.974 | 6.126 | 0.235 | 0.241 |
| D1 | 3.910 | 4.110 | 0.154 | 0.162 |
| E1 | 3.375 | 3.575 | 0.133 | 0.141 |
| D2 | 4.824 | 4.976 | 0.190 | 0.196 |
| E2 | 5.674 | 5.826 | 0.223 | 0.229 |
| k | 1.190 | 1.390 | 0.047 | 0.055 |
| b | 0.350 | 0.450 | 0.014 | 0.018 |
| e | 1.270TYP. | 0.050TYP. | ||
| L | 0.559 | 0.711 | 0.022 | 0.028 |
| L1 | 0.424 | 0.576 | 0.017 | 0.023 |
| H | 0.574 | 0.726 | 0.023 | 0.029 |
| 10 | 12 | 10 | 12 | |
Order Information
| Device | Package | Unit/Tape |
|---|---|---|
| SP60N03GHNK | PDFN5X6-8L | 5000 |
2504101957_Siliup-SP60N03GHNK_C22466766.pdf
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