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quality general purpose NPN transistor Slkor 2SD965A-R with simplified SOT89 package and high current capability factory
quality general purpose NPN transistor Slkor 2SD965A-R with simplified SOT89 package and high current capability factory

general purpose NPN transistor Slkor 2SD965A-R with simplified SOT89 package and high current capability

Key Attributes
Model Number: 2SD965A-R
Product Custom Attributes
Emitter-Base Voltage(Vebo):
7V
Current - Collector Cutoff:
100nA
DC Current Gain:
340@500mA,2V
Transition Frequency(fT):
150MHz
Number:
1 NPN
Vce Saturation(VCE(sat)):
1V@3A,100mA
Type:
NPN
Pd - Power Dissipation:
750mW
Current - Collector(Ic):
5A
Collector - Emitter Voltage VCEO:
30V
Operating Temperature:
-
Mfr. Part #:
2SD965A-R
Package:
SOT-89
Product Description

Product Overview

The 2SD965A is an NPN transistor designed for general-purpose applications. It offers a simplified outline in an SOT-89 package, featuring low saturation voltage and large collector power dissipation and current capabilities. This transistor is suitable for various electronic circuits requiring reliable amplification and switching.

Product Attributes

  • Type: NPN Transistor
  • Package: SOT-89
  • Marking: 2SD965A

Technical Specifications

Parameter Symbol Rating Unit Test Conditions Min Typ Max
Absolute Maximum Ratings (Ta = 25)
Collector - Base Voltage VCBO 40 V
Collector - Emitter Voltage VCEO 30 V
Emitter - Base Voltage VEBO 7 V
Collector Current - Continuous IC 5 A
Collector Power Dissipation PC 750 mW
Thermal Resistance From Junction To Ambient RJA 167 /W
Junction Temperature TJ 150
Storage Temperature Range Tstg -55 to 150
Electrical Characteristics (Ta = 25)
Collector- base breakdown voltage VCBO 40 V Ic= 100 A IE= 0
Collector- emitter breakdown voltage VCEO 30 V Ic= 1 mA IB= 0
Emitter - base breakdown voltage VEBO 7 V IE= 100A IC= 0
Collector-base cut-off current ICBO nA VCB= 10 V , IE= 0 100
Emitter cut-off current IEBO nA VEB= 7V , IC=0 100
Collector-emitter saturation voltage VCE(sat) V IC=3 A, IB=100mA 1
Base - emitter saturation voltage VBE(sat) V IC=3 A, IB=100mA 1 1.2
DC current gain hFE VCE= 2V, IC= 1mA 200
VCE= 2V, IC= 500mA 230 950
VCE= 2V, IC= 2A 150
Collector output capacitance Cob pF VCB= 20V, IE= 0,f=1MHz 50
Transition frequency fT 150 MHz VCE= 6V, IC= 50mA
Classification of hfe(2)
Type
2SD965A-Q Range 230-380
2SD965A-R Range 340-600
2SD965A-S Range 560-800
SOT-89 Dimensions (mm)
Unit A D E HE Lp w e1
mm 1.6 - 1.4 4.6 - 4.4 2.6 - 2.4 4.25 - 3.75 3.0 0.13 1.5 - 1.2
Unit c bp2 bp1 bp3 e
mm 0.48 - 0.35 0.53 - 0.40 1.8 - 1.4 0.44 - 0.23 3.0

2203071730_Slkor-2SD965A-R_C2980857.pdf

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