Power Switching MOSFET Siliup SP30N06GNJ N Channel Device with High Continuous Drain Current Rating
Key Attributes
Model Number:
SP30N06GNJ
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
28A
RDS(on):
6mΩ@10V;9.4mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.7V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
25pF
Number:
1 N-channel
Output Capacitance(Coss):
240pF
Pd - Power Dissipation:
21W
Input Capacitance(Ciss):
625pF
Gate Charge(Qg):
7.1nC@10V
Mfr. Part #:
SP30N06GNJ
Package:
PDFN-8L(3x3)
Product Description
Product Overview
The SP30N06GNJ is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications and DC-DC converters. It features fast switching, low gate charge, and low RDS(on), leveraging advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy, making it suitable for demanding power electronic designs.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Line: MOSFET
- Channel Type: N-Channel
- Technology: Advanced Split Gate Trench
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Condition |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | |
| Gate-Source Voltage | VGS | 20 | V | |
| Continuous Drain Current (Tc=25) | ID | 28 | A | |
| Continuous Drain Current (Tc=100) | ID | 20 | A | |
| Pulsed Drain Current | IDM | 100 | A | |
| Single Pulse Avalanche Energy | EAS | 39.2 | mJ | |
| Power Dissipation (Tc=25) | PD | 21 | W | |
| Thermal Resistance Junction-to-Case | RJC | 6 | /W | |
| Storage Temperature Range | TSTG | -55 to 150 | ||
| Operating Junction Temperature Range | TJ | -55 to 150 | ||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V , ID=250uA |
| Drain Cut-Off Current | IDSS | 1 | uA | VDS=30V , VGS=0V |
| Gate Leakage Current | IGSS | 100 | nA | VGS=20V , VDS=0V |
| Gate Threshold Voltage | VGS(th) | 1.2 - 2.2 | V | VGS=VDS , ID =250uA |
| Drain-Source ON Resistance | RDS(ON) | 6 - 8 | m | VGS=10V , ID=12A |
| Drain-Source ON Resistance | RDS(ON) | 9.4 - 11 | m | VGS=4.5V , ID=12A |
| Input Capacitance | Ciss | 625 | pF | VDS=15V,VGS=0V,f=1MHZ |
| Output Capacitance | Coss | 240 | pF | VDS=15V,VGS=0V,f=1MHZ |
| Reverse Transfer Capacitance | Crss | 25 | pF | VDS=15V,VGS=0V,f=1MHZ |
| Total Gate Charge | Qg | 7.1 | nC | VGS=10V,VDS=15V,ID=12A |
| Gate-Source Charge | Qgs | 2.2 | nC | VGS=10V,VDS=15V,ID=12A |
| Gate-Drain Charge | Qgd | 3.1 | nC | VGS=10V,VDS=15V,ID=12A |
| Turn-On Delay Time | td(on) | 7 | nS | VGS=10V,VDD=15V, ID=12A, RGEN=2 |
| Rise Time | tr | 18.8 | nS | VGS=10V,VDD=15V, ID=12A, RGEN=2 |
| Turn-Off Delay Time | td(off) | 19.5 | nS | VGS=10V,VDD=15V, ID=12A, RGEN=2 |
| Fall Time | tf | 3.4 | nS | VGS=10V,VDD=15V, ID=12A, RGEN=2 |
| Source-Drain Diode Forward Voltage | VSD | 1.2 | V | IS =1A, VGS = 0V |
| Maximum Body-Diode Continuous Current | IS | 28 | A | |
| Reverse Recovery Time | trr | 11 | nS | IS=20A, di/dt=100A/us, TJ=25 |
| Reverse Recovery Charge | Qrr | 18 | nC | IS=20A, di/dt=100A/us, TJ=25 |
Package Information (PDFN3X3-8L)
| Symbol | Dimensions (mm) | Dimensions (inches) |
|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 0.650 | 0.850 | 0.026 | 0.033 |
| A1 | 0.152 (REF.) | 0.006 (REF.) |
| A2 | 0~0.05 | 0~0.002 |
| D | 2.900 | 3.100 | 0.114 | 0.122 |
| D1 | 2.300 | 2.600 | 0.091 | 0.102 |
| E | 2.900 | 3.100 | 0.114 | 0.122 |
| E1 | 3.150 | 3.450 | 0.124 | 0.136 |
| E2 | 1.535 | 1.935 | 0.060 | 0.076 |
| b | 0.200 | 0.400 | 0.008 | 0.016 |
| e | 0.550 | 0.750 | 0.022 | 0.030 |
| L | 0.300 | 0.500 | 0.012 | 0.020 |
| L1 | 0.180 | 0.480 | 0.007 | 0.019 |
| L2 | 0~0.100 | 0~0.004 |
| L3 | 0~0.100 | 0~0.004 |
| H | 0.315 | 0.515 | 0.012 | 0.020 |
| 9 | 13 | 9 | 13 |
Order Information
| Device | Package | Unit/Tape |
|---|---|---|
| SP30N06GNJ | PDFN3X3-8L | 5000 |
2504101957_Siliup-SP30N06GNJ_C22466703.pdf
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