SL80N08D MOSFET Featuring 80 Volt Drain Source Voltage and 6.5 Milliohm RDS ON for Power Management
Key Attributes
Model Number:
SL80N08D
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6.5mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
38pF@40V
Number:
1 N-channel
Pd - Power Dissipation:
56W
Input Capacitance(Ciss):
2.86nF@40V
Gate Charge(Qg):
40nC@10V
Mfr. Part #:
SL80N08D
Package:
TO-252-3L
Product Description
SL80N08D N-Channel MOSFET
The SL80N08D is an 80V N-Channel Enhancement Mode MOSFET featuring advanced trench technology. It offers excellent RDS(ON) and low gate charge, with operation possible at gate voltages as low as 4.5V. This device is ideal for battery protection and other switching applications.
General Features
- VDS = 80V
- ID = 80A
- RDS(ON) < 6.5m (VGS=10V)
- VGS=10V
Applications
- Battery protection
- Load switch
- Uninterruptible power supply
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Voltage | VDS | 80 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | VGS @ 10V, TC=25 | 80 | A | ||
| VGS @ 10V, TC=100 | 42.5 | A | ||||
| Pulsed Drain Current | IDM | 170 | A | |||
| Single Pulse Avalanche Energy | EAS | 57.8 | mJ | |||
| Avalanche Current | IAS | 34 | A | |||
| Total Power Dissipation | PD | TC=25 | 56 | W | ||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Thermal Resistance Junction-Ambient | RJA | 62 | /W | |||
| Thermal Resistance Junction-Case | RJC | 2.2 | /W | |||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 80 | V | ||
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=20A | 4.8 | 6.5 | m | |
| VGS=4.5V , ID=20A | 6.3 | 8.5 | m | |||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 2.5 | V | |
| Drain-Source Leakage Current | IDSS | VDS=64V , VGS=0V , TJ=25 | 1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Forward Transconductance | gfs | VDS=5V , ID=20A | 75 | S | ||
| Gate Resistance | Rg | VDS=0V , VGS=0V , f=1MHz | 0.5 | |||
| Total Gate Charge | Qg | VDS=40V , VGS=10V , ID=20A | 40 | nC | ||
| Gate-Source Charge | Qgs | 7.2 | ||||
| Gate-Drain Charge | Qgd | 6.5 | ||||
| Turn-On Delay Time | Td(on) | VDD=40V , VGS=10V , RG=3, ID=20A | 8.3 | ns | ||
| Rise Time | Tr | 4.2 | ns | |||
| Turn-Off Delay Time | Td(off) | 36 | ns | |||
| Fall Time | Tf | 6.9 | ns | |||
| Input Capacitance | Ciss | VDS=40V , VGS=0V , f=1MHz | 2860 | pF | ||
| Output Capacitance | Coss | 410 | pF | |||
| Reverse Transfer Capacitance | Crss | 38 | pF | |||
| Continuous Source Current | IS | VG=VD=0V , Force Current | 48 | A | ||
| Diode Forward Voltage | VSD | VGS=0V , IS=A , TJ=25 | 0.77 | 1.0 | V | |
| Reverse Recovery Time | trr | IF=20A , dI/dt=100A/s , TJ=25 | 27 | nS | ||
| Reverse Recovery Charge | Qrr | 89 | nC |
2409272301_Slkor-SL80N08D_C7496549.pdf
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