100V N Channel Planar MOSFET Siliup SP540TQ designed for synchronous rectification and power control

Key Attributes
Model Number: SP540TQ
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
35A
RDS(on):
35mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
41pF
Number:
1 N-channel
Input Capacitance(Ciss):
1.966nF
Output Capacitance(Coss):
257pF
Pd - Power Dissipation:
130W
Gate Charge(Qg):
70nC@10V
Mfr. Part #:
SP540TQ
Package:
TO-220-3L
Product Description

Product Overview

The SP540TQ is a 100V N-Channel Planar MOSFET designed for efficient power management. It features fast switching, low gate charge, and low Rdson, making it ideal for high-frequency switching and synchronous rectification applications. The device is 100% tested for single pulse avalanche energy and is suitable for DC-DC converters.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Device Code: 540
  • Package Type: TO-220-3L
  • Channel Type: N-Channel
  • Technology: Planar MOSFET

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
Drain-Source Voltage V(BR)DSS 100 V
Static Drain-Source On-Resistance RDS(on)TYP @10V 35 m
Continuous Drain Current ID 35 A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS 25 V
Continuous Drain Current (TC=25) ID 35 A
Continuous Drain Current (TC=100) ID 23.3 A
Pulsed Drain Current IDM 140 A
Single Pulse Avalanche Energy1 EAS 720 mJ
Power Dissipation (TC=25) PD 130 W
Thermal Resistance Junction-to-Case RJC 0.96 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 100 - - V
Drain-Source Leakage Current IDSS VDS=80V , VGS=0V , TJ=25 - - 25 uA
Gate-Source Leakage Current IGSS VGS=25V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 2 3 4 V
Static Drain-Source On-Resistance RDS(ON) VGS=10V , ID=16A - 35 45 m
Input Capacitance Ciss VDS=25V , VGS=0V , f=1MHz - 1966 - pF
Output Capacitance Coss - 257 - pF
Reverse Transfer Capacitance Crss - 41 - pF
Total Gate Charge Qg VDS=80V , VGS=10V , ID=16A - 70 - nC
Gate-Source Charge Qgs - 15 - nC
Gate-Drain Charge Qg - 22 - nC
Turn-On Delay Time Td(on) VDD=50V VGS=10V , RG=5.1, ID=16A - 11 - nS
Rise Time Tr - 35 - nS
Turn-Off Delay Time Td(off) - 39 - nS
Fall Time Tf - 35 - nS
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 35 A
Reverse Recovery Time Trr IS=16A, di/dt=100A/us, TJ=25 - 120 - nS
Reverse Recovery Charge Qrr - 510 - nC

Package Information

Package: TO-220-3L

Symbol Dimensions In Millimeters Dimensions In Inches
Min. Max. Min. Max.
A 4.400 4.600 0.173 0.181
A1 2.250 2.550 0.089 0.100
b 0.710 0.910 0.028 0.036
b1 1.170 1.370 0.046 0.054
c 0.330 0.650 0.013 0.026
c1 1.200 1.400 0.047 0.055
D 9.910 10.250 0.390 0.404
E 8.950 9.750 0.352 0.384
E1 12.650 13.050 0.498 0.514
e 2.540 TYP. 0.100 TYP.
e1 4.980 5.180 0.196 0.204
F 2.650 2.950 0.104 0.116
H 7.900 8.100 0.311 0.319
h 0.000 0.300 0.000 0.012
L 12.900 13.400 0.508 0.528
L1 2.850 3.250 0.112 0.128
V 6.900 REF. 0.276 REF.
3.400 3.800 0.134 0.150

2506271720_Siliup-SP540TQ_C49257257.pdf

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