100V P Channel MOSFET Siliup SP010P40TQ with low gate charge and fast switching TO220 3L package
Product Overview
The SP010P40TQ is a 100V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications, DC-DC converters, and power management. It features fast switching, low gate charge, and low RDS(on) with 100% single pulse avalanche energy testing. The device is housed in a TO-220-3L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP010P40TQ
- Package: TO-220-3L
- Material: Silicon (implied by P-Channel MOSFET)
Technical Specifications
| Parameter | Symbol | Test Condition | Rating | Unit |
|---|---|---|---|---|
| Product Summary | ||||
| Breakdown Voltage (Drain-Source) | V(BR)DSS | -100 | V | |
| Static Drain-Source On-Resistance (Typ.) | RDS(on)TYP | @10V | 40 | m |
| Static Drain-Source On-Resistance (Typ.) | RDS(on)TYP | @4.5V | 48 | m |
| Continuous Drain Current | ID | -35 | A | |
| Absolute Maximum Ratings | ||||
| Drain-Source Voltage | VDS | (Ta=25) | -100 | V |
| Gate-Source Voltage | VGS | (Ta=25) | 20 | V |
| Continuous Drain Current | ID | (Tc=25) | -35 | A |
| Continuous Drain Current | ID | (Tc=100) | -23 | A |
| Pulsed Drain Current | IDM | -140 | A | |
| Single Pulse Avalanche Energy | EAS | 60 | mJ | |
| Power Dissipation | PD | (Tc=25) | 94 | W |
| Thermal Resistance Junction-to-Case | RJC | 1.3 | /W | |
| Storage Temperature Range | TSTG | -55 to 150 | ||
| Operating Junction Temperature Range | TJ | -55 to 150 | ||
| Electrical Characteristics | ||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -100 | V |
| Drain Cut-Off Current | IDSS | VDS=-80V , VGS=0V , TJ=25 | -1 | A |
| Gate Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.0 to -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-15A | 40 to 50 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-15A | 48 to 64 | m |
| Dynamic Characteristics | ||||
| Input Capacitance | Ciss | VDS=-50V , VGS=0V , f=1MHz | 5414 | pF |
| Output Capacitance | Coss | 177 | pF | |
| Reverse Transfer Capacitance | Crss | 89 | pF | |
| Total Gate Charge | Qg | VDS=-50V , VGS=-10V , ID=-15A | 96 | nC |
| Gate-Source Charge | Qgs | 24 | - | |
| Gate-Drain Charge | Qgd | 10 | - | |
| Switching Characteristics | ||||
| Turn-On Delay Time | td(on) | VDD=-50V,VGS=-10V,RG=2.7, ID=-5A | 8 | nS |
| Rise Time | tr | 38 | - | |
| Turn-Off Delay Time | td(off) | 94 | - | |
| Fall Time | tf | 226 | - | |
| Drain-Source Body Diode Characteristics | ||||
| Source-Drain Diode Forward Voltage | VSD | IS = -1A, VGS = 0V | -1.2 | V |
| Maximum Body-Diode Continuous Current | IS | -35 | A | |
| Reverse Recovery Time | Trr | IS=-15A, di/dt=100A/us, TJ=25 | 36 | nS |
| Reverse Recovery Charge | Qrr | 43 | nC | |
Package Dimensions (TO-220-3L)
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 4.400 | 4.600 | 0.173 | 0.181 |
| A1 | 2.250 | 2.550 | 0.089 | 0.100 |
| b | 0.710 | 0.910 | 0.028 | 0.036 |
| b1 | 1.170 | 1.370 | 0.046 | 0.054 |
| c | 0.330 | 0.650 | 0.013 | 0.026 |
| c1 | 1.200 | 1.400 | 0.047 | 0.055 |
| D | 9.910 | 10.250 | 0.390 | 0.404 |
| E | 8.950 | 9.750 | 0.352 | 0.384 |
| E1 | 12.650 | 13.050 | 0.498 | 0.514 |
| e | 2.540 TYP. | 0.100 TYP. | ||
| e1 | 4.980 | 5.180 | 0.196 | 0.204 |
| F | 2.650 | 2.950 | 0.104 | 0.116 |
| H | 7.900 | 8.100 | 0.311 | 0.319 |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| L | 12.900 | 13.400 | 0.508 | 0.528 |
| L1 | 2.850 | 3.250 | 0.112 | 0.128 |
| V | 6.900 REF. | 0.276 REF. | ||
| 3.400 | 3.800 | 0.134 | 0.150 |
2506271720_Siliup-SP010P40TQ_C49257241.pdf
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