100V P Channel MOSFET Siliup SP010P40TQ with low gate charge and fast switching TO220 3L package

Key Attributes
Model Number: SP010P40TQ
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
35A
RDS(on):
40mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.8V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
89pF
Number:
1 P-Channel
Input Capacitance(Ciss):
5.414nF
Pd - Power Dissipation:
94W
Output Capacitance(Coss):
177pF
Gate Charge(Qg):
96nC@10V
Mfr. Part #:
SP010P40TQ
Package:
TO-220-3L
Product Description

Product Overview

The SP010P40TQ is a 100V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications, DC-DC converters, and power management. It features fast switching, low gate charge, and low RDS(on) with 100% single pulse avalanche energy testing. The device is housed in a TO-220-3L package.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP010P40TQ
  • Package: TO-220-3L
  • Material: Silicon (implied by P-Channel MOSFET)

Technical Specifications

Parameter Symbol Test Condition Rating Unit
Product Summary
Breakdown Voltage (Drain-Source) V(BR)DSS -100 V
Static Drain-Source On-Resistance (Typ.) RDS(on)TYP @10V 40 m
Static Drain-Source On-Resistance (Typ.) RDS(on)TYP @4.5V 48 m
Continuous Drain Current ID -35 A
Absolute Maximum Ratings
Drain-Source Voltage VDS (Ta=25) -100 V
Gate-Source Voltage VGS (Ta=25) 20 V
Continuous Drain Current ID (Tc=25) -35 A
Continuous Drain Current ID (Tc=100) -23 A
Pulsed Drain Current IDM -140 A
Single Pulse Avalanche Energy EAS 60 mJ
Power Dissipation PD (Tc=25) 94 W
Thermal Resistance Junction-to-Case RJC 1.3 /W
Storage Temperature Range TSTG -55 to 150
Operating Junction Temperature Range TJ -55 to 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=-250uA -100 V
Drain Cut-Off Current IDSS VDS=-80V , VGS=0V , TJ=25 -1 A
Gate Leakage Current IGSS VGS=20V , VDS=0V 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =-250uA -1.0 to -2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=-10V , ID=-15A 40 to 50 m
Static Drain-Source On-Resistance RDS(ON) VGS=-4.5V , ID=-15A 48 to 64 m
Dynamic Characteristics
Input Capacitance Ciss VDS=-50V , VGS=0V , f=1MHz 5414 pF
Output Capacitance Coss 177 pF
Reverse Transfer Capacitance Crss 89 pF
Total Gate Charge Qg VDS=-50V , VGS=-10V , ID=-15A 96 nC
Gate-Source Charge Qgs 24 -
Gate-Drain Charge Qgd 10 -
Switching Characteristics
Turn-On Delay Time td(on) VDD=-50V,VGS=-10V,RG=2.7, ID=-5A 8 nS
Rise Time tr 38 -
Turn-Off Delay Time td(off) 94 -
Fall Time tf 226 -
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = -1A, VGS = 0V -1.2 V
Maximum Body-Diode Continuous Current IS -35 A
Reverse Recovery Time Trr IS=-15A, di/dt=100A/us, TJ=25 36 nS
Reverse Recovery Charge Qrr 43 nC

Package Dimensions (TO-220-3L)

Symbol Dimensions In Millimeters Dimensions In Inches
Min. Max. Min. Max.
A 4.400 4.600 0.173 0.181
A1 2.250 2.550 0.089 0.100
b 0.710 0.910 0.028 0.036
b1 1.170 1.370 0.046 0.054
c 0.330 0.650 0.013 0.026
c1 1.200 1.400 0.047 0.055
D 9.910 10.250 0.390 0.404
E 8.950 9.750 0.352 0.384
E1 12.650 13.050 0.498 0.514
e 2.540 TYP. 0.100 TYP.
e1 4.980 5.180 0.196 0.204
F 2.650 2.950 0.104 0.116
H 7.900 8.100 0.311 0.319
h 0.000 0.300 0.000 0.012
L 12.900 13.400 0.508 0.528
L1 2.850 3.250 0.112 0.128
V 6.900 REF. 0.276 REF.
3.400 3.800 0.134 0.150

2506271720_Siliup-SP010P40TQ_C49257241.pdf

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