100V P Channel MOSFET Siliup SP010P70GNJ with Split Gate Trench Technology and Avalanche Energy Test
Key Attributes
Model Number:
SP010P70GNJ
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
14A
RDS(on):
70mΩ@10V;85mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.7V
Reverse Transfer Capacitance (Crss@Vds):
23pF
Number:
1 P-Channel
Pd - Power Dissipation:
50W
Output Capacitance(Coss):
120pF
Input Capacitance(Ciss):
1.05nF
Gate Charge(Qg):
20nC@10V
Mfr. Part #:
SP010P70GNJ
Package:
PDFN-8L(3x3)
Product Description
Product Overview
The SP010P70GNJ is a 100V P-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching speed, low On-Resistance, and advanced Split Gate Trench Technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for applications such as DC-DC converters and power management. It comes in a PDFN3x3-8L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP010P70GNJ
- Channel Type: P-Channel
- Package: PDFN3x3-8L
- Technology: Advanced Split Gate Trench Technology
- Testing: 100% Single Pulse avalanche energy Test
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary V(BR)DSS | V(BR)DSS | -100 | V | |||
| Product Summary RDS(on)TYP | RDS(on) | @-10V | 70 | m | ||
| Product Summary RDS(on)TYP | RDS(on) | @-4.5V | 85 | m | ||
| Product Summary ID | ID | -14 | A | |||
| Drain-Source Voltage | VDSS | Ta=25 | -100 | V | ||
| Gate-Source Voltage | VGSS | Ta=25 | 20 | V | ||
| Continuous Drain Current | ID | (Tc=25C) | -14 | A | ||
| Pulse Drain Current | IDM | -56 | A | |||
| Single Pulse Avalanche Energy | EAS | 110 | mJ | |||
| Maximum Power Dissipation | PD | (Tc=25C) | 50 | W | ||
| Thermal Resistance-Junction to Case | RJC | 2.5 | C/W | |||
| Maximum Junction Temperature | TJ | -55 | 150 | C | ||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -100 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-80V , VGS=0V , TJ=25 | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1 | -1.7 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-10A | 70 | 88 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-5A | 85 | 115 | m | |
| Input Capacitance | Ciss | VDS=-50V , VGS=0V , f=1MHz | 1050 | pF | ||
| Output Capacitance | Coss | 120 | pF | |||
| Reverse Transfer Capacitance | Crss | 23 | pF | |||
| Total Gate Charge (4.5V) | Qg | VDS=-50V , VGS=-10V , ID=-10A | 20 | nC | ||
| Gate-Source Charge | Qgs | 4 | nC | |||
| Gate-Drain Charge | Qgd | 4.4 | nC | |||
| Turn-On Delay Time | Td(on) | VDD=-50V, VGS=-10V , RG=9.1, ID=-20A | 15 | ns | ||
| Rise Time | Tr | 30 | ns | |||
| Turn-Off Delay Time | Td(off) | 73 | ns | |||
| Fall Time | Tf | 76 | ns | |||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| Reverse recover time | Trr | ISD=5A, di/dt=100A/us, Vdd=50V, Tj=25 | 23 | ns | ||
| Reverse recovery charge | Qrr | 68 | nC | |||
| Diode Continuous Current | IS | -14 | A |
Package Information (PDFN3x3-8L)
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 0.650 | 0.850 | 0.026 | 0.033 |
| A1 | 0.152 REF. | 0.006 REF. | ||
| A2 | 0~0.05 | 0~0.002 | ||
| D | 2.900 | 3.100 | 0.114 | 0.122 |
| D1 | 2.300 | 2.600 | 0.091 | 0.102 |
| E | 2.900 | 3.100 | 0.114 | 0.122 |
| E1 | 3.150 | 3.450 | 0.124 | 0.136 |
| E2 | 1.535 | 1.935 | 0.060 | 0.076 |
| b | 0.200 | 0.400 | 0.008 | 0.016 |
| e | 0.550 | 0.750 | 0.022 | 0.030 |
| L | 0.300 | 0.500 | 0.012 | 0.020 |
| L1 | 0.180 | 0.480 | 0.007 | 0.019 |
| L2 | 0~0.100 | 0~0.004 | ||
| L3 | 0~0.100 | 0~0.004 | ||
| H | 0.315 | 0.515 | 0.012 | 0.020 |
| 9 | 13 | 9 | 13 |
2506271720_Siliup-SP010P70GNJ_C49257253.pdf
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