High Current P Channel MOSFET Slkor AOD409 Offering Fully Characterized Avalanche Voltage and Current
Key Attributes
Model Number:
AOD409
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
30A
Operating Temperature -:
-55℃~+150℃
RDS(on):
40mΩ@4.5V,15A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
100pF
Number:
1 P-Channel
Input Capacitance(Ciss):
-
Pd - Power Dissipation:
80W
Gate Charge(Qg):
40nC@10V
Mfr. Part #:
AOD409
Package:
TO-252
Product Description
AOD409 -60V/-30A P-Channel MOSFET
The AOD409 is a P-Channel MOSFET designed for high-density cell applications, offering ultra-low RDS(ON). It features fully characterized avalanche voltage and current, and an excellent package for efficient heat dissipation. This MOSFET is suitable for PWM applications, power management, and load switch functionalities.
Product Attributes
- Brand: slkormicro
- Model: AOD409
Technical Specifications
| Parameter | Condition | Min | Typ | Max | Unit | |
| Static Electrical Characteristics | Drain-Source Breakdown Voltage (BVDSS) | VGS=0VID=-250A | -60 | V | ||
| Zero Gate Voltage Drain Current (IDSS) | VDS=-60VVGS=0V | -1 | uA | |||
| Gate-Body Leakage Current (IGSS) | VGS=20VVDS=0V | 100 | nA | |||
| Gate Threshold Voltage (VGS(th)) | VDS=VGSID=-250A | -1.0 | -1.8 | -2.5 | V | |
| Drain-Source On-State Resistance (RDS(on)) | VGS=-10VID=-20A | 30 | 40 | m | ||
| VGS=-4.5VID=-15A | 40 | 50 | m | |||
| Capacitance | Input Capacitance (CISS) | VDS=-30VVGS=0V f=1MHz | 2156 | pF | ||
| Output Capacitance (COSS) | 143 | pF | ||||
| Reverse Transfer Capacitance (CRSS) | 100 | pF | ||||
| Switching Characteristics | Total Gate Charge (Qg) | VDS=-30VID=-9A VGS=-10V | 40 | nC | ||
| Gate Source Charge (Qgs) | 7 | nC | ||||
| Gate Drain Charge (Qgd) | 8 | nC | ||||
| Turn-on Delay Time (td(on)) | VDD=-30VID=-9A VGS=-10VRG=3 | 12 | nS | |||
| Turn-on Rise Time (tr) | 14 | nS | ||||
| Turn-Off Delay Time (td(off)) | 38 | nS | ||||
| Turn-Off Fall Time (tf) | 15 | nS | ||||
| Source-Drain Diode Characteristics | Forward on voltage (VSD) | TJ=25IS=-30A | -1.2 | V | ||
| Diode Continuous Forward Current (IS) | TC=25C | -30 | A | |||
| Absolute Maximum Ratings | Drain-Source Voltage (VDS) | -60 | V | |||
| Gate-Source Voltage (VGS) | 20 | V | ||||
| Maximum Junction Temperature (TJ) | 150 | C | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | C | |||
| Maximum Power Dissipation | Power Dissipation (PD) | TC=25C, Mounted on Large Heat Sink | 80 | W | ||
| Thermal Resistance Junction-to-Ambient (RJA) | 50 | C/W | ||||
| Pulsed Drain Current | Pulse Drain Current (IDM) | TC=25C | -135 | A | ||
| Tested Continuous Drain Current (ID) | TC=25C | -30 | A |
2409302231_Slkor-AOD409_C7496597.pdf
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