P Channel MOSFET with low gate charge Slkor SL10P04S featuring ultra low RDS ON and heat dissipation
Key Attributes
Model Number:
SL10P04S
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-55℃~+150℃
RDS(on):
15mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
200pF
Number:
1 P-Channel
Output Capacitance(Coss):
360pF
Input Capacitance(Ciss):
4nF
Pd - Power Dissipation:
4.2W
Gate Charge(Qg):
40nC@4.5V
Mfr. Part #:
SL10P04S
Package:
SOP-8
Product Description
Product Overview
This P-Channel MOSFET utilizes advanced trench technology and design to achieve excellent RDS(on) with low gate charge, making it suitable for a wide range of applications. Key advantages include low gate charge, ultra-low RDS(ON) due to advanced high cell density trench technology, and an excellent package design for efficient heat dissipation. A green device option is also available.
Product Attributes
- Brand: SLKORMicro
- Model: SL10P04S
- Certifications: Green device available
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Units |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -40 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID | Continuous Drain Current-TC=25 | -10 | A | |||
| ID | Continuous Drain Current-TC=100 | -6.3 | A | |||
| ID | Pulsed Drain Current1 | -40 | A | |||
| EAS | Single Pulse Avalanche Energy | --- | mJ | |||
| PD | Power Dissipation | 4.2 | W | |||
| TJ, TSTG | Operating and Storage Junction Temperature Range | -55 | +150 | |||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance,Junction to Case | 30 | /W | |||
| RJA | Thermal Resistance,Junction to Ambient | 60 | /W | |||
| Electrical Characteristics | ||||||
| BVDSS | Drain-Sourtce Breakdown Voltage | VGS=0V,ID=250A | -40 | --- | --- | V |
| IDSS | Zero Gate Voltage Drain Current | VGS=0V, VDS=-40V, TJ=25 | --- | --- | -1 | µA |
| IGSS | Gate-Source Leakage Current | VGS=±20V, VDS=0A | --- | --- | ±100 | nA |
| VGS(th) | GATE-Source Threshold Voltage | VGS=VDS, ID=250µA | -1.0 | -1.6 | -2.5 | V |
| RDS(ON) | Drain-Source On Resistance2 | VGS=-10V,ID=-10A | --- | 11.5 | 15 | mΩ |
| RDS(ON) | Drain-Source On Resistance2 | VGS=-4.5V,ID=-8A | --- | 16 | 22 | mΩ |
| GFS | Forward Transconductance | VDS=-10V, ID=-10A | --- | 13 | --- | S |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS=-25V, VGS=0V, f=1MHz | --- | 275 | 400 | pF |
| Coss | Output Capacitance | VDS=-25V, VGS=0V, f=1MHz | --- | 240 | 360 | pF |
| Crss | Reverse Transfer Capacitance | VDS=-25V, VGS=0V, f=1MHz | --- | 137 | 200 | pF |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time2,3 | VDS=-20V, VGS=-10V ID=-1A,RGEN=6Ω | --- | 23 | 40 | ns |
| tr | Rise Time2,3 | VDS=-20V, VGS=-10V ID=-1A,RGEN=6Ω | --- | 10 | 20 | ns |
| td(off) | Turn-Off Delay Time2,3 | VDS=-20V, VGS=-10V ID=-1A,RGEN=6Ω | --- | 135 | 250 | ns |
| tf | Fall Time2,3 | VDS=-20V, VGS=-10V ID=-1A,RGEN=6Ω | --- | 46 | 90 | ns |
| Qg | Total Gate Charge2,3 | ID=-10A | --- | 22.2 | 40 | nC |
| Qgs | Gate-Source Charge2,3 | VDS=-32V , VGS=-4.5V , ID=-10A | --- | 8.2 | 16 | nC |
| Qgd | Gate-Drain “Miller” Charge2,3 | VDS=-32V , VGS=-4.5V , ID=-10A | --- | 8.8 | 16 | nC |
| Drain-Source Diode Characteristics | ||||||
| VSD | Source-Drain Diode Forward Voltage2 | VGS=0V,IS=-1A, TJ=25 | --- | --- | -1 | V |
| IS | Continuous Source Current | VG=VD=0V , Force Current | --- | -10 | A | |
| IS | Pulsed Source Current | --- | -20 | A | ||
2410122027_Slkor-SL10P04S_C3041272.pdf
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