650V N-Channel Planar MOSFET Siliup SP10N65TQ with Low Gate Charge and High Frequency Switching Capability
Key Attributes
Model Number:
SP10N65TQ
Product Custom Attributes
Drain To Source Voltage:
650V
Configuration:
-
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-55℃~+150℃
RDS(on):
670mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
11pF
Number:
-
Output Capacitance(Coss):
136pF
Input Capacitance(Ciss):
1.645nF
Pd - Power Dissipation:
130W
Gate Charge(Qg):
32nC@10V
Mfr. Part #:
SP10N65TQ
Package:
TO-220-3L-C
Product Description
Product Overview
The SP10N65TQ is a 650V N-Channel Planar MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it ideal for DC-DC converters and high-frequency switching applications, including synchronous rectification. The device is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Line: Planar MOSFET
- Channel Type: N-Channel
- Technology: Planar
- Package: TO-220-3L
- Device Code: 10N65
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | V(BR)DSS | 650 | V | |||
| RDS(on) TYP | RDS(on) | @10V | 0.67 | |||
| ID | ID | 10 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 650 | V | |||
| Gate-Source Voltage | VGS | 30 | V | |||
| Continuous Drain Current (Tc=25) | ID | 10 | A | |||
| Continuous Drain Current (Tc=100) | ID | 6.66 | A | |||
| Pulsed Drain Current | IDM | 40 | A | |||
| Single Pulse Avalanche Energy1 | EAS | 500 | mJ | |||
| Power Dissipation (Tc=25) | PD | 130 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.96 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 650 | V | ||
| Drain Cut-Off Current | IDSS | VDS = 520V, VGS = 0V | 1 | A | ||
| Gate Leakage Current | IGSS | VGS = 30V, VDS = 0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.0 | 3.0 | 4.0 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 3A | 0.67 | 0.85 | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS =25V, VGS = 0V, f = 1.0MHz | 1645 | pF | ||
| Output Capacitance | Coss | 136 | pF | |||
| Reverse Transfer Capacitance | Crss | 11 | pF | |||
| Total Gate Charge | Qg | VDS=520V , VGS=10V , ID=10A | 32 | nC | ||
| Gate-Source Charge | Qgs | 9 | nC | |||
| Gate-Drain Charge | Qgd | 11 | nC | |||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=325V , VGS=10V , RG=10, ID=10A | 29 | nS | ||
| Rise Time | tr | 20 | ||||
| Turn-Off Delay Time | td(off) | 55 | ||||
| Fall Time | tf | 21 | ||||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | 1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | 10 | A | |||
| Body Diode Reverse Recovery Time | Trr | IS = 10A, dIF/dt = 100A/us | 535 | nS | ||
| Body Diode Reverse Recovery Charge | Qrr | 3.22 | uC | |||
| Package Information (TO-220-3L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 4.400 - 4.600 | 0.173 - 0.181 | ||||
| A1 | 2.250 - 2.550 | 0.089 - 0.100 | ||||
| b | 0.710 - 0.910 | 0.028 - 0.036 | ||||
| b1 | 1.170 - 1.370 | 0.046 - 0.054 | ||||
| c | 0.330 - 0.650 | 0.013 - 0.026 | ||||
| c1 | 1.200 - 1.400 | 0.047 - 0.055 | ||||
| D | 9.910 - 10.250 | 0.390 - 0.404 | ||||
| E | 8.950 - 9.750 | 0.352 - 0.384 | ||||
| E1 | 12.650 - 13.050 | 0.498 - 0.514 | ||||
| e | 2.540 TYP. | 0.100 TYP. | ||||
| e1 | 4.980 - 5.180 | 0.196 - 0.204 | ||||
| F | 2.650 - 2.950 | 0.104 - 0.116 | ||||
| H | 7.900 - 8.100 | 0.311 - 0.319 | ||||
| h | 0.000 - 0.300 | 0.000 - 0.012 | ||||
| L | 12.900 - 13.400 | 0.508 - 0.528 | ||||
| L1 | 2.850 - 3.250 | 0.112 - 0.128 | ||||
| V | 6.900 REF. | 0.276 REF. | ||||
| 3.400 - 3.800 | 0.134 - 0.150 | |||||
Note: 1The test condition is VDD=50V,VGS=10V,L=10mH,RG=30;
Order Information:
| Device | Package | Unit/Tube |
|---|---|---|
| SP10N65TQ | TO-220-3L | 50 |
Circuit Diagram: SP10N65TQ
Marking: 10N65 :Device Code, ** :Week Code
2504101957_Siliup-SP10N65TQ_C42372386.pdf
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