20V Complementary MOSFET with High Density Cell Design and Low On Resistance Siliup SP2024KCTL Device
Key Attributes
Model Number:
SP2024KCTL
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
750mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
380mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
15pF@16V;9pF@16V
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
120pF
Input Capacitance(Ciss):
120pF@16V;113pF@16V
Pd - Power Dissipation:
150mW
Mfr. Part #:
SP2024KCTL
Package:
SOT-563
Product Description
Product Overview
The SP2024KCTL is a 20V N- and P-Channel complementary MOSFET designed with trench technology for superior performance. It features a supper high-density cell design, resulting in extremely low Rds(on) and exceptional ON resistance with maximum DC current capability. This ESD protected device is suitable for driver applications including relays, solenoids, lamps, and hammers, as well as power supply converters and load/power switching for portable devices. The device is manufactured by Shanghai Siliup Semiconductor Technology Co. Ltd.
Product Attributes
- Brand: Shanghai Siliup Semiconductor Technology Co. Ltd.
- Product Type: N- and P-Channel Complementary MOSFET
- Voltage Rating: 20V
- Package: SOT-563
- ESD Protection: HBM 2KV
- Device Code Marking: 24K
Technical Specifications
| Parameter | N-Channel (Q1) Typ. Value | P-Channel (Q2) Typ. Value | Unit |
|---|---|---|---|
| Summary (Typical) | |||
| V(BR)DSS | 20V | -20V | V |
| RDS(on)@4.5V | 250m | - | |
| RDS(on)@2.5V | 350m | - | |
| ID@4.5V | 0.75A | - | A |
| RDS(on)@-4.5V | - | 430m | |
| RDS(on)@-2.5V | - | 620m | |
| ID@-4.5V | - | -0.66A | A |
| Absolute Maximum Ratings (Ta=25) | |||
| Power Dissipation (PD) | 0.15 | W | |
| Junction Temperature (TJ) | 150 | ||
| Storage Temperature (TSTG) | -55~ +150 | ||
| Maximum Ratings - N-Channel Q1 (Ta=25) | |||
| Drain-Source Voltage (VDS) | 20 | V | |
| Gate-Source Voltage (VGS) | 12 | V | |
| Continuous Drain Current (ID) | 0.75 | A | |
| Maximum Ratings - P-Channel Q2 (Ta=25) | |||
| Drain-Source Voltage (VDS) | -20 | V | |
| Gate-Source Voltage (VGS) | 10 | V | |
| Continuous Drain Current (ID) | -0.66 | A | |
| Electrical Characteristics - N-Channel Q1 (TA=25C) | |||
| Drain-source breakdown voltage (V(BR)DSS) | 20 | - | V |
| Zero gate voltage drain current (IDSS) | 1 | - | A |
| Gate-body leakage current (IGSS) | 10 | - | A |
| Gate threshold voltage (VGS(th)) | 0.35 - 0.65 | - | V |
| Drain-source on-resistance (RDS(on)) @ VGS=4.5V, ID=0.5A | 0.25 - 0.38 | - | |
| Drain-source on-resistance (RDS(on)) @ VGS=2.5V, ID=0.2A | 0.35 - 0.45 | - | V |
| Input Capacitance (Ciss) | 79 - 120 | - | pF |
| Output Capacitance (Coss) | 13 - 20 | - | pF |
| Reverse Transfer Capacitance (Crss) | 9 - 15 | - | pF |
| Turn-on delay time (td(on)) | 6.7 | - | ns |
| Turn-on rise time (tr) | 4.8 | - | ns |
| Turn-off delay time (td(off)) | 17.3 | - | ns |
| Turn-off fall time (tf) | 7.4 | - | ns |
| Body Diode Voltage (VSD) | 0.7 - 1.3 | - | V |
| Electrical Characteristics - P-Channel Q2 (TA=25C) | |||
| Drain-source breakdown voltage (V(BR)DSS) | - | -20 | V |
| Zero gate voltage drain current (IDSS) | - | -1 | A |
| Gate-body leakage current (IGSS) | - | 10 | A |
| Gate threshold voltage (VGS(th)) | - | -0.35 - -1.0 | V |
| Drain-source on-resistance (RDS(on)) @ VGS=-4.5V, ID=-0.5A | - | 0.43 - 0.52 | |
| Drain-source on-resistance (RDS(on)) @ VGS=-2.5V, ID=-0.2A | - | 0.62 - 0.7 | V |
| Input Capacitance (Ciss) | - | 113 | pF |
| Output Capacitance (Coss) | - | 15 | pF |
| Reverse Transfer Capacitance (Crss) | - | 9 | pF |
| Turn-on delay time (td(on)) | - | 9 | ns |
| Turn-on rise time (tr) | - | 5.7 | ns |
| Turn-off delay time (td(off)) | - | 32.6 | ns |
| Turn-off fall time (tf) | - | 20.3 | ns |
| Diode Forward voltage (VSD) | - | -1.2 | V |
| Package Information (SOT-563) | |||
| Symbol | Dimensions (mm) Min | Dimensions (mm) Max | Reference |
| A | 0.525 | 0.600 | |
| A1 | 0.000 | 0.050 | |
| e | 0.450 | 0.550 | |
| c | 0.090 | 0.160 | |
| D | 1.500 | 1.700 | |
| b | 0.170 | 0.270 | |
| E1 | 1.100 | 1.300 | |
| E | 1.500 | 1.700 | |
| L | 0.100 | 0.300 | |
| L1 | 0.200 | 0.400 | |
| 7Ref. | |||
2411212332_Siliup-SP2024KCTL_C41355145.pdf
Related Products
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
Compact surface mount bridge rectifier YONGYUTAI DB157S with plated solderable leads and ABS housing
Product OverviewThis series of bridge rectifiers features glass passivated die construction, offering a low forward voltage drop and high current/surge current capabilities. Designed for surface mount applications, these rectifiers are constructed from UL 94V-0 rated plastic material. They are ...
Surface Mount Schottky Bridge Rectifier YONGYUTAI MB14F with 40 Volt Reverse Voltage and 1 Amp Forward Current
Product OverviewThis MBF package Surface Mount Schottky Bridge rectifier offers a reverse voltage range of 40 to 200V and a forward current of 1A. It features high surge current capability and is designed for surface mount applications. Ideal for single-phase half-wave 60 Hz rectification with ...
Surface mount ZHIDE ES5D rectifier with low leakage current and 100 volt maximum DC blocking voltage
Product OverviewThe ES5A-ES5M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, with guaranteed high-temperature soldering. These rectifiers are RoHS compliant ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
