86--136 6733 2386
quality 250V N Channel Planar MOSFET Siliup SP80N25TF with High Continuous Drain Current and Low Gate Charge factory
quality 250V N Channel Planar MOSFET Siliup SP80N25TF with High Continuous Drain Current and Low Gate Charge factory

250V N Channel Planar MOSFET Siliup SP80N25TF with High Continuous Drain Current and Low Gate Charge

Key Attributes
Model Number: SP80N25TF
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
250V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+150℃
RDS(on):
45mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
95pF@25V
Number:
1 N-channel
Output Capacitance(Coss):
980pF
Input Capacitance(Ciss):
5.25nF
Pd - Power Dissipation:
500W
Gate Charge(Qg):
134nC@10V
Mfr. Part #:
SP80N25TF
Package:
TO-247-3L
Product Description

Product Overview

The SP80N25TF is a 250V N-Channel Planar MOSFET designed for power switching applications. It features fast switching, low gate charge, and low RDS(on), making it suitable for DC-DC converters and power management systems. This MOSFET is 100% tested for single pulse avalanche energy.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP80N25TF
  • Technology: N-Channel Planar MOSFET
  • Package: TO-247-3L

Technical Specifications

Parameter Symbol Rating Unit Test Condition
Drain-Source Breakdown Voltage V(BR)DSS 250 V
RDS(on) Typ. RDS(on) 35 m @10V
Continuous Drain Current ID 80 A
Drain-Source Voltage VDS 250 V (Ta=25, unless otherwise noted)
Gate-Source Voltage VGS 20 V (Ta=25, unless otherwise noted)
Continuous Drain Current (Tc=25) ID 80 A (Ta=25, unless otherwise noted)
Pulsed Drain Current IDM 320 A (Ta=25, unless otherwise noted)
Power Dissipation (Tc=25) PD 500 W (Ta=25, unless otherwise noted)
Single Pulsed Avalanche Energy EAS 3588 mJ 1)
Thermal Resistance, Junction-Case RJC 0.25 /W (Ta=25, unless otherwise noted)
Operation and Storage Temperature Tstg, Tj -55 to 150 (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS 250 V ID = 250A, VGS = 0V
Drain Cut-Off Current IDSS - 1 A VDS = 200V, VGS = 0V
Gate Leakage Current IGSS - 0.1 A VGS = 20V, VDS = 0V
Gate Threshold Voltage VGS(th) 2 3 4 V VDS = VGS, ID = 250A
Drain-Source ON Resistance RDS(ON) - 35 45 m VGS = 10V, ID = 40A
Input Capacitance Ciss - 5250 - pF VDS =25V, VGS = 0V, f = 1.0MHz
Output Capacitance Coss - 980 - pF VDS =25V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance Crss - 95 - pF VDS =25V, VGS = 0V, f = 1.0MHz
Total Gate Charge Qg - 134 - nC VDS=200V , VGS=10V , ID=40A
Gate-Source Charge Qgs - 56 - nC VDS=200V , VGS=10V , ID=40A
Gate-Drain Charge Qgd - 58 - nC VDS=200V , VGS=10V , ID=40A
Turn-On Delay Time td(on) - 53 - ns VGS = 10V, VDS =125V, ID=40A , RG = 10
Rise Time tr - 242 - ns VGS = 10V, VDS =125V, ID=40A , RG = 10
Turn-Off Delay Time td(off) - 256 - ns VGS = 10V, VDS =125V, ID=40A , RG = 10
Fall Time tf - 116 - ns VGS = 10V, VDS =125V, ID=40A , RG = 10
Source-Drain Diode Forward Voltage VSD - - 1.5 V IS = 55A, VGS = 0V

Note 1: EAS is tested at starting Tj = 25, VDD=75V,VGS = 10V,L = 10mH, Rg=25m.


2410311050_Siliup-SP80N25TF_C42372377.pdf
Related Products
quality High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers factory
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
quality digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free factory
digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free
Digital Transistors (Built-in Resistors)The DTA114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It offers moisture sensitivity level 1 and is halogen-free, making it a reliable choice for various electronic ...
quality 400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications factory
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
quality RoHS Compliant NPN Amplifier YANGJIE S8050-H with Epoxy Casing and Collector Power Dissipation 300mW factory
RoHS Compliant NPN Amplifier YANGJIE S8050-H with Epoxy Casing and Collector Power Dissipation 300mW
Product OverviewThe S8050-L through S8050-H series are NPN general-purpose amplifiers manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. These components are designed for general amplification applications and feature an epoxy casing that meets UL-94 V-0 flammability rating. Halogen...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.