switching solution Siliup SP010P190TH 100V P Channel MOSFET with low RDS on and tested avalanche energy rating
Key Attributes
Model Number:
SP010P190TH
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
12A
RDS(on):
190mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
18pF
Number:
1 P-Channel
Output Capacitance(Coss):
30pF
Input Capacitance(Ciss):
721pF
Pd - Power Dissipation:
39W
Gate Charge(Qg):
16nC@10V
Mfr. Part #:
SP010P190TH
Package:
TO-252
Product Description
Product Overview
The SP010P190TH is a 100V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for efficient performance, it features fast switching, low gate charge, and low RDS(on). This MOSFET is 100% tested for single pulse avalanche energy and is suitable for applications such as DC-DC converters and load switching.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 10P19
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | -100 | V | ||||
| RDS(on) | @-10V | 190 | m | |||
| RDS(on) | @-4.5V | 210 | m | |||
| ID | -12 | A | ||||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | -100 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (TC=25) | ID | -12 | A | |||
| Continuous Drain Current (TC=100) | ID | -8 | A | |||
| Pulsed Drain Current | IDM | -48 | A | |||
| Power Dissipation (TC=25) | PD | 39 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 3.2 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -100 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=-80V , VGS=0V , TJ=25 | - | - | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.0 | -1.5 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-10A | - | 190 | 250 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-10A | - | 210 | 300 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-50V , VGS=0V , f=1MHz | - | 721 | - | pF |
| Output Capacitance | Coss | - | 30 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 18 | - | pF | |
| Total Gate Charge | Qg | VDS=-50V , VGS=-10V , ID=-3A | - | 16 | - | nC |
| Gate-Source Charge | Qgs | - | 3 | - | ||
| Gate-Drain Charge | Qgd | - | 2.5 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=-50V VGS=-10V , RG=6, ID=-3A | - | 9 | - | nS |
| Rise Time | Tr | - | 6.5 | - | ||
| Turn-Off Delay Time | Td(off) | - | 28 | - | ||
| Fall Time | Tf | - | 7.5 | - | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | -12 | A | |
| Reverse Recovery Time | Trr | IS=-7A, di/dt=-100A/us, Tj=25 | - | 32 | - | nS |
| Reverse Recovery Charge | Qrr | - | 47 | - | nC | |
Package Information: TO-252
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 2.200 | 2.400 | 0.087 | 0.094 |
| A1 | 0.000 | 0.127 | 0.000 | 0.005 |
| b | 0.660 | 0.860 | 0.026 | 0.034 |
| c | 0.460 | 0.580 | 0.018 | 0.023 |
| D | 6.500 | 6.700 | 0.256 | 0.264 |
| D1 | 5.100 | 5.460 | 0.201 | 0.215 |
| D2 | 4.830 | REF. | 0.190 | REF. |
| E | 6.000 | 6.200 | 0.236 | 0.244 |
| e | 2.186 | 2.386 | 0.086 | 0.094 |
| L | 9.800 | 10.400 | 0.386 | 0.409 |
| L1 | 2.900 | REF. | 0.114 | REF. |
| L2 | 1.400 | 1.700 | 0.055 | 0.067 |
| L3 | 1.600 | REF. | 0.063 | REF. |
| L4 | 0.600 | 1.000 | 0.024 | 0.039 |
| 1.100 | 1.300 | 0.043 | 0.051 | |
| 0 | 8 | 0 | 8 | |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| V | 5.350 | REF. | 0.211 | REF. |
2504101957_Siliup-SP010P190TH_C41355223.pdf
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