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quality High Current Power MOSFET Slkor SL100N03D with TO252 DPAK Package and Enhanced Switching Performance factory
quality High Current Power MOSFET Slkor SL100N03D with TO252 DPAK Package and Enhanced Switching Performance factory

High Current Power MOSFET Slkor SL100N03D with TO252 DPAK Package and Enhanced Switching Performance

Key Attributes
Model Number: SL100N03D
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
100A
RDS(on):
7mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
315pF
Number:
1 N-channel
Pd - Power Dissipation:
70W
Input Capacitance(Ciss):
3.27nF
Output Capacitance(Coss):
358pF
Gate Charge(Qg):
62nC@10V
Mfr. Part #:
SL100N03D
Package:
TO-252
Product Description

Product Overview

This Power MOSFET utilizes advanced TRENCH technology to minimize conduction loss, enhance switching performance, and provide superior avalanche and commutation mode energy handling. It is designed for applications requiring low on-resistance, fast switching, and high dv/dt capability.

Product Attributes

  • Brand: SLKORMicro
  • Model: SL100N03D
  • Package: TO-252 DPAK

Technical Specifications

ParameterSymbolValueUnitTest ConditionMin.Typ.Max.
Absolute Maximum Ratings
Drain-source VoltageVDS30V
Gate-source VoltageVGS±20V
Continuous Drain CurrentID100ATC=25
Continuous Drain CurrentID65ATC=100
Pulsed Drain CurrentIDM400ATC=25, Tp Limited By Tjmax (note1)
Maximum Power DissipationPD70WTC=25
Avalanche energy, single PulseEAS272mJL=0.5mH (note2)
Operating Junction And Storage TemperatureTj,Tstg-55 To 150
Maximum lead temperature for soldering purposes, 1/8" from case for 5 secondsTL300
Thermal Resistance
Junction-to-CaseRθJC/W1.78
Electrical Characteristic (TC=25 unless otherwise noted)
Off Characteristic
Drain-source breakdown voltageBVDSS30VVGS=0V, ID=250µA
Zero gate voltage drain currentIDSSµAVDS=30V, VGS=0V1
Gate-source leakage currentIGSSnAVGS=±20V, VDS=0V±100
On Characteristics
Gate threshold voltageVGS(th)1.0VVDS=VGS, ID=250µA1.02.2
Drain-source on-state resistanceRDS(on)3.2mΩVGS=10V, ID=20A3.24.0
Drain-source on-state resistanceRDS(on)5.3mΩVGS=4.5V, ID=15A5.37.0
Dynamic Characteristic
Input CapacitanceCissPFVGS=0V, VDS=15V, f=1.0MHz3270
Output CapacitanceCossPFVGS=0V, VDS=15V, f=1.0MHz358
Reverse Transfer CapacitanceCrssPFVGS=0V, VDS=15V, f=1.0MHz315
Switching Characteristics
Turn-on delay timetd(on)nSVDS=10V, ID=30A, VGS=10V RL=3Ω, Tj=2512
Turn-on Rise timetrnSVDS=10V, ID=30A, VGS=10V RL=3Ω, Tj=25110
Turn-off delay timetd(off)nSVDS=10V, ID=30A, VGS=10V RL=3Ω, Tj=2556
Turn-off Fall timetfnSVDS=10V, ID=30A, VGS=10V RL=3Ω, Tj=25100
Gate Total ChargeQGnCVGS=10V, VDS=10V, ID=30A62
Gate-Source ChargeQgSnCVGS=10V, VDS=10V, ID=30A30
Gate-Drain Charge QgdnCVGS=10V, VDS=10V, ID=30A3.2
Drain-Source Diode Characteristics
Body Diode Forward VoltageVSDVVGS=0V, ISD=20ATJ=251.2
Body Diode Forward CurrentIsA100
Body Diode Reverse Recovery TimeTrrnsTJ=25, ISD=20A, VGS=0V, di/dt =100A/μs20
Body Diode Reverse Recovery ChargeQrrnCTJ=25, ISD=20A, VGS=0V, di/dt =100A/μs10

Applications

  • PWM Application
  • Load Switch
  • Power Management

2312160125_Slkor-SL100N03D_C19632491.pdf

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