Fast Switching 60V P Channel MOSFET Siliup SP60P60TH Featuring Low Gate Charge and RDSon
Key Attributes
Model Number:
SP60P60TH
Product Custom Attributes
Pd - Power Dissipation:
32W
Drain To Source Voltage:
60V
Configuration:
-
Current - Continuous Drain(Id):
14A
Operating Temperature -:
-55℃~+150℃
RDS(on):
60mΩ@10V;75mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
58pF
Number:
1 P-Channel
Output Capacitance(Coss):
77pF
Input Capacitance(Ciss):
1.09nF
Gate Charge(Qg):
23nC@10V
Mfr. Part #:
SP60P60TH
Package:
TO-252
Product Description
Product Overview
The SP60P60TH is a 60V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. This device is designed for fast switching applications and features low gate charge and low RDS(on). It is 100% tested for single pulse avalanche energy. Key applications include DC-DC converters and load switching.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: SP60P60TH
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -60 | V | |||
| Static Drain-Source On-Resistance | RDS(on) | @-10V | 60 | m | ||
| Static Drain-Source On-Resistance | RDS(on) | @-4.5V | 75 | m | ||
| Continuous Drain Current | ID | -14 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25) | -60 | V | ||
| Gate-Source Voltage | VGS | (Ta=25) | 20 | V | ||
| Continuous Drain Current | ID | (TC=25) | -14 | A | ||
| Continuous Drain Current | ID | (TC=100) | -9.3 | A | ||
| Pulsed Drain Current | IDM | (Ta=25) | -64 | A | ||
| Single Pulse Avalanche Energy | EAS | (Ta=25) | 80 | mJ | ||
| Power Dissipation | PD | (TC=25) | 32 | W | ||
| Thermal Resistance Junction-to-Case | RJC | (Ta=25) | 3.9 | /W | ||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -60 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-48V , VGS=0V , TJ=25 | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.0 | -2.0 | -3.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-8A | 60 | 80 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-8A | 75 | 110 | m | |
| Input Capacitance | Ciss | VDS=-30V , VGS=0V , f=1MHz | 1090 | pF | ||
| Output Capacitance | Coss | VDS=-30V , VGS=0V , f=1MHz | 77 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=-30V , VGS=0V , f=1MHz | 58 | pF | ||
| Total Gate Charge | Qg | VDS=-30V , VGS=-10V , ID=-6A | 23 | nC | ||
| Gate-Source Charge | Qgs | VDS=-30V , VGS=-10V , ID=-6A | 4.2 | nC | ||
| Gate-Drain Charge | Qg | VDS=-30V , VGS=-10V , ID=-6A | 4.8 | nC | ||
| Turn-On Delay Time | Td(on) | VDD=-30V, VGS=-10V ,RG=3,ID=-10A | 9.8 | nS | ||
| Rise Time | Tr | VDD=-30V, VGS=-10V ,RG=3,ID=-10A | 6.1 | nS | ||
| Turn-Off Delay Time | Td(off) | VDD=-30V, VGS=-10V ,RG=3,ID=-10A | 44 | nS | ||
| Fall Time | Tf | VDD=-30V, VGS=-10V ,RG=3,ID=-10A | 12.7 | nS | ||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | 1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | -14 | A | |||
| Reverse Recovery Time | Trr | IS=-8A, di/dt=100A/us, TJ=25 | 25 | nS | ||
| Reverse Recovery Charge | Qrr | IS=-8A, di/dt=100A/us, TJ=25 | 31 | nC | ||
Package Information (TO-252)
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 2.200 | 2.400 | 0.087 | 0.094 |
| A1 | 0.000 | 0.127 | 0.000 | 0.005 |
| b | 0.660 | 0.860 | 0.026 | 0.034 |
| c | 0.460 | 0.580 | 0.018 | 0.023 |
| D | 6.500 | 6.700 | 0.256 | 0.264 |
| D1 | 5.100 | 5.460 | 0.201 | 0.215 |
| D2 | 4.830 | REF. | 0.190 | REF. |
| E | 6.000 | 6.200 | 0.236 | 0.244 |
| e | 2.186 | 2.386 | 0.086 | 0.094 |
| L | 9.800 | 10.400 | 0.386 | 0.409 |
| L1 | 2.900 | REF. | 0.114 | REF. |
| L2 | 1.400 | 1.700 | 0.055 | 0.067 |
| L3 | 1.600 | REF. | 0.063 | REF. |
| L4 | 0.600 | 1.000 | 0.024 | 0.039 |
| 1.100 | 1.300 | 0.043 | 0.051 | |
| 0 | 8 | 0 | 8 | |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| V | 5.350 | REF. | 0.211 | REF. |
2504101957_Siliup-SP60P60TH_C41355219.pdf
Related Products
Glass passivated chip diode YONGYUTAI MB8S offering performance in power supply and rectification circuits
Product OverviewThis series of glass passivated chip junction diodes offers a wide range of reverse voltage capabilities from 100V to 1000V, with a forward current of 0.8A and high surge current capability. Designed for surface mount applications, these diodes are suitable for various power supply ...
Surface Mount Schottky Bridge Rectifier YONGYUTAI MB14F with 40 Volt Reverse Voltage and 1 Amp Forward Current
Product OverviewThis MBF package Surface Mount Schottky Bridge rectifier offers a reverse voltage range of 40 to 200V and a forward current of 1A. It features high surge current capability and is designed for surface mount applications. Ideal for single-phase half-wave 60 Hz rectification with ...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
Planar die Zener diode XZT BZT52B9V1S designed for medium current applications and automated assembly
Product OverviewThe BZT52B2V4S thru BZT52B43S series are Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in a lead-free version. These diodes feature a planar die construction.Product AttributesBrand: ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
