100V N Channel MOSFET Siliup SP010N70TH Featuring Low RDS on and Fast Switching for DC DC Converters
Key Attributes
Model Number:
SP010N70TH
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
15A
RDS(on):
70mΩ@10V;85mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.8V@250uA
Reverse Transfer Capacitance (Crss@Vds):
40pF
Number:
1 N-channel
Output Capacitance(Coss):
55pF
Input Capacitance(Ciss):
1.1nF
Pd - Power Dissipation:
40W
Gate Charge(Qg):
12nC@10V
Mfr. Part #:
SP010N70TH
Package:
TO-252
Product Description
Product Overview
The SP010N70TH is a 100V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) at both 10V and 4.5V gate drive. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for applications such as DC-DC converters and load switching. The device comes in a TO-252 package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP010N70TH
- Channel Type: N-Channel
- Package: TO-252
- Device Code: 010N70
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 100 | V | |||
| RDS(on) | RDS(on) | @10V | 70 | 85 | m | |
| RDS(on) | RDS(on) | @4.5V | 85 | 110 | m | |
| Continuous Drain Current | ID | 15 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25) | 100 | V | ||
| Gate-Source Voltage | VGS | (Ta=25) | 20 | V | ||
| Continuous Drain Current | ID | (TC=25) | 15 | A | ||
| Continuous Drain Current | ID | (TC=100) | 10 | A | ||
| Pulsed Drain Current | IDM | 60 | A | |||
| Single Pulse Avalanche Energy | EAS | 11 | mJ | |||
| Power Dissipation | PD | (TC=25) | 40 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 3.1 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 100 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=80V , VGS=0V , TJ=25 | 1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.2 | 1.8 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=5A | 70 | 85 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=3A | 85 | 110 | m | |
| Input Capacitance | Ciss | VDS=50V , VGS=0V , f=1MHz | 1100 | pF | ||
| Output Capacitance | Coss | VDS=50V , VGS=0V , f=1MHz | 55 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=50V , VGS=0V , f=1MHz | 40 | pF | ||
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=5A | 12 | nC | ||
| Gate-Source Charge | Qgs | VDS=50V , VGS=10V , ID=5A | 2.9 | nC | ||
| Gate-Drain Charge | Qg | VDS=50V , VGS=10V , ID=5A | 1.8 | nC | ||
| Turn-On Delay Time | Td(on) | VDD=50V VGS=10V , RG=3, ID=5A | 3.9 | nS | ||
| Rise Time | Tr | VDD=50V VGS=10V , RG=3, ID=5A | 26 | nS | ||
| Turn-Off Delay Time | Td(off) | VDD=50V VGS=10V , RG=3, ID=5A | 16.2 | nS | ||
| Fall Time | Tf | VDD=50V VGS=10V , RG=3, ID=5A | 8.9 | nS | ||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | 1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | 15 | A | |||
| Reverse Recovery Time | Trr | IS=5A, di/dt=100A/us, TJ=25 | 35 | nS | ||
| Reverse Recovery Charge | Qrr | IS=5A, di/dt=100A/us, TJ=25 | 46 | nC | ||
| TO-252 Package Information (Dimensions in mm) | |||
|---|---|---|---|
| Symbol | Min. | Max. | REF. |
| A | 2.200 | 2.400 | |
| A1 | 0.000 | 0.127 | |
| b | 0.660 | 0.860 | |
| c | 0.460 | 0.580 | |
| D | 6.500 | 6.700 | |
| D1 | 5.100 | 5.460 | |
| D2 | 4.830 | ||
| E | 6.000 | 6.200 | |
| e | 2.186 | 2.386 | |
| L | 9.800 | 10.400 | |
| L1 | 2.900 | ||
| L2 | 1.400 | 1.700 | |
| L3 | 1.600 | ||
| L4 | 0.600 | 1.000 | |
| 1.100 | 1.300 | ||
| 0 | 8 | ||
| h | 0.000 | 0.300 | |
| V | 5.350 | ||
| TO-252 Package Information (Dimensions in Inches) | |||
|---|---|---|---|
| Symbol | Min. | Max. | REF. |
| A | 0.087 | 0.094 | |
| A1 | 0.000 | 0.005 | |
| b | 0.026 | 0.034 | |
| c | 0.018 | 0.023 | |
| D | 0.256 | 0.264 | |
| D1 | 0.201 | 0.215 | |
| D2 | 0.190 | ||
| E | 0.236 | 0.244 | |
| e | 0.086 | 0.094 | |
| L | 0.386 | 0.409 | |
| L1 | 0.114 | ||
| L2 | 0.055 | 0.067 | |
| L3 | 0.063 | ||
| L4 | 0.024 | 0.039 | |
| 0.043 | 0.051 | ||
| 0 | 8 | ||
| h | 0.000 | 0.012 | |
| V | 0.211 | ||
2504101957_Siliup-SP010N70TH_C41354991.pdf
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