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quality Dual P Channel MOSFET Siliup SP30P38DP8 30V Device Designed for Hard Switched Circuits and UPS Systems factory
quality Dual P Channel MOSFET Siliup SP30P38DP8 30V Device Designed for Hard Switched Circuits and UPS Systems factory

Dual P Channel MOSFET Siliup SP30P38DP8 30V Device Designed for Hard Switched Circuits and UPS Systems

Key Attributes
Model Number: SP30P38DP8
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.5A
RDS(on):
38mΩ@10V;58mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
57pF
Number:
2 P-Channel
Output Capacitance(Coss):
72pF
Input Capacitance(Ciss):
501pF
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
9nC@10V
Mfr. Part #:
SP30P38DP8
Package:
SOP-8L
Product Description

Product Overview

The SP30P38DP8 is a 30V Dual P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for power switching applications, it offers fast switching, low gate charge, and low RDS(on). This device is suitable for hard-switched and high-frequency circuits, as well as uninterruptible power supply systems. The device comes in an SOP-8L package and is marked with '30P38D'.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP30P38DP8
  • Device Code: 30P38D
  • Package: SOP-8L

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Units
Product Summary
Drain-Source Voltage V(BR)DSS -30 V
RDS(on) @ -10V 38 m
RDS(on) @ -4.5V 58 m
Continuous Drain Current ID -5.5 A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current ID -5.5 A
Pulsed Drain Current IDM -22 A
Power Dissipation PD 1.5 W
Thermal Resistance Junction-to-Ambient RJA 85 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=-250uA -30 V
Drain-Source Leakage Current IDSS VDS=-24V , VGS=0V -1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =-250uA -1.0 -1.5 -2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=-10V , ID=-4.1A 38 50 m
Static Drain-Source On-Resistance RDS(ON) VGS=-4.5V , ID=-3.0A 58 80 m
Dynamic Characteristics
Input Capacitance Ciss VDS=-15V , VGS=0V , f=1MHz 501 pF
Output Capacitance Coss 72 pF
Reverse Transfer Capacitance Crss 57 pF
Total Gate Charge Qg VDS=-15V , VGS=-10V , ID=-5A 9 nC
Gate-Source Charge Qgs 1.5
Gate-Drain Charge Qgd 2.3
Switching Characteristics
Turn-On Delay Time Td(on) VDD=-15V, VGS=-10V , RG=3, ID=-1A 8.6 nS
Rise Time Tr 5.0
Turn-Off Delay Time Td(off) 28.2
Fall Time Tf 13.5
Diode Characteristics
Diode Forward Voltage VSD VGS=0V , IS=-1A -1.2 V
Maximum Body-Diode Continuous Current IS -5.5 A
Reverse recovery time Trr IS=-5A, di/dt=100A/us, TJ=25 31 nS
Reverse recovery charge Qrr 10 nC
Package Information (SOP-8L)
Symbol Dimensions In Millimeters Min. Max.
A 1.35 1.75
A1 0.10 0.25
A2 1.35 1.55
b 0.33 0.51
c 0.17 0.25
D 4.80 5.00
e (REF.) 1.27
E 5.80 6.20
E1 3.80 4.00
L 0.40 1.27
0 8

2504101957_Siliup-SP30P38DP8_C41355086.pdf
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