Siliup SP40N08DNK 40V Dual N Channel MOSFET with PDFN5X6 8L Package and Halogen Free ROHS Compliant Design

Key Attributes
Model Number: SP40N08DNK
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
45A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8.5mΩ@10V;11mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
158pF
Number:
2 N-Channel
Output Capacitance(Coss):
210pF
Input Capacitance(Ciss):
1.785nF
Pd - Power Dissipation:
35W
Gate Charge(Qg):
31nC@10V
Mfr. Part #:
SP40N08DNK
Package:
PDFN-8L(5x6)
Product Description

Product Overview

The SP40N08DNK is a 40V Dual N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching speed, a surface mount package, and is ROHS Compliant & Halogen-Free. This MOSFET is 100% single pulse avalanche energy tested and is suitable for applications such as DC-DC Converters and Motor Control.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP40N08DNK
  • Package Type: PDFN5X6-8L
  • Compliance: ROHS Compliant & Halogen-Free
  • Testing: 100% Single Pulse avalanche energy Test

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
V(BR)DSS V(BR)DSS 40 V
RDS(on)TYP RDS(on) @10V 8.5 11 m
RDS(on)TYP RDS(on) @4.5V 11 15 m
ID ID 45 A
Absolute Maximum Ratings
Drain-Source Voltage VDSS 40 V
Gate-Source Voltage VGSS 20 V
Continuous Drain Current (Tc=25C) ID (Tc=25C) 45 A
Continuous Drain Current (Tc=100C) ID (Tc=100C) 30 A
Pulse Drain Current Tested IDM 180 A
Single pulsed avalanche energy EAS 51 mJ
Power Dissipation (Tc=25C) PD (Tc=25C) 35 W
Thermal Resistance Junction-to-Case RJC 3.6 C/W
Storage Temperature Range TSTG -55 150 C
Operating Junction Temperature Range TJ -55 150 C
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 40 - - V
Drain-Source Leakage Current IDSS VDS=32V , VGS=0V , TJ=25 - - 1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1.0 1.5 2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS =10V, ID =12A - 8.5 11 m
Static Drain-Source On-Resistance RDS(ON) VGS =4.5V, ID =6A - 11 15 m
Input Capacitance Ciss VDS=20V , VGS=0V , f=1MHz - 1785 - pF
Output Capacitance Coss - 210 - pF
Reverse Transfer Capacitance Crss - 158 - pF
Total Gate Charge Qg VDS=20V , VGS=10V , ID=10A - 31 - nC
Gate-Source Charge Qgs - 4 - nC
Gate-Drain Charge Qg d - 11 - nC
Turn-On Delay Time Td(on) VDD=20V ,VGS=10V , RG=3, ID=10A - 6 - nS
Rise Time Tr - 16 - nS
Turn-Off Delay Time Td(off) - 31 - nS
Fall Time Tf - 15 - nS
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 45 A
Reverse recover time Trr IS=10A, di/dt=100A/us, TJ=25 - 31 - nS
Reverse recovery charge Qrr - 23 - nC
PDFN5X6-8L Package Information
Symbol Dimensions In Millimeters Dimensions In Inches Note
Min. Max. Min. Max.
A 0.900 1.000 0.035 0.039
A3 0.254 0.010 REF. REF.
D 4.944 5.096 0.195 0.201
E 5.974 6.126 0.235 0.241
D1 1.470 1.870 0.058 0.074
D2 0.470 0.870 0.019 0.034
E1 3.375 3.575 0.133 0.141
D3 4.824 4.976 0.190 0.196
E2 5.674 5.826 0.223 0.229
k 1.190 1.390 0.047 0.055
b 0.350 0.450 0.014 0.018
e 1.270 TYP. 0.050 TYP. TYP.
L 0.559 0.711 0.022 0.028
L1 0.424 0.576 0.017 0.023
H 0.574 0.726 0.023 0.029
10 12 10 12

2504101957_Siliup-SP40N08DNK_C41355069.pdf

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