Surface Mount P Channel MOSFET Slkor SL2P03F with Lead Free Certification and High Current Handling
Key Attributes
Model Number:
SL2P03F
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
180mΩ@4.5V,1.5A
Gate Threshold Voltage (Vgs(th)):
1.6V
Reverse Transfer Capacitance (Crss@Vds):
28pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
226pF@15V
Pd - Power Dissipation:
1W
Gate Charge(Qg):
8.5nC@10V
Mfr. Part #:
SL2P03F
Package:
SOT-23
Product Description
Product Overview
The SL2P03F is a P-Channel Enhancement Mode Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and is suitable for load switch and PWM applications. Key features include a VDS of -30V, ID of -2.0A, and RDS(ON) as low as 72m @ VGS=-10V. It boasts high power and current handling capability and is available in a lead-free, surface-mount package.
Product Attributes
- Brand: SLKORMicro
- Product Type: P-Channel Enhancement Mode Power MOSFET
- Package: SOT-23 (Surface Mount)
- Certifications: Lead-free product acquired
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| General Features | ||||||
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | -2.0 | A | |||
| Drain Current-Pulsed | IDM | (Note 1) | -10 | A | ||
| Maximum Power Dissipation | PD | 1.0 | W | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | To | 150 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | (Note 2) | 125 | /W | ||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250μA | -30 | -33 | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V,VGS=0V | - | - | -1 | μA |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| On Characteristics (Note 3) | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=-250μA | -1 | -1.6 | -2.5 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-10V, ID=-2.0A | - | 72 | 130 | mΩ |
| VGS=-4.5V, ID=-1.5A | - | 110 | 180 | mΩ | ||
| Forward Transconductance | gFS | VDS=-10V,ID=-2A | 2 | - | - | S |
| Dynamic Characteristics (Note4) | ||||||
| Input Capacitance | Clss | - | 226 | - | PF | |
| Output Capacitance | Coss | - | 47 | - | PF | |
| Reverse Transfer Capacitance | Crss | VDS=-15V,VGS=0V, F=1.0MHz | - | 28 | - | PF |
| Switching Characteristics (Note 4) | ||||||
| Turn-on Delay Time | td(on) | - | 9 | - | nS | |
| Turn-on Rise Time | tr | - | 9 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 18 | - | nS | |
| Turn-Off Fall Time | tf | VDD=-15V,RL=15Ω, VGS=-10V,RGEN=6Ω | - | 6 | - | nS |
| Total Gate Charge | ||||||
| Total Gate Charge | Qg | VDS=-15V,ID=-2.0A,VGS=-10V | - | 8.5 | - | nC |
| Gate-Source Charge | Qgs | - | 2.3 | - | nC | |
| Gate-Drain Charge | Qgd | - | 1.5 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=-2.0A (Note 3) | - | - | -1.2 | V |
2208041800_Slkor-SL2P03F_C5122629.pdf
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