30V P Channel MOSFET Siliup SP30P20TH with TO 252 Package and Single Pulse Avalanche Energy Tested
Key Attributes
Model Number:
SP30P20TH
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
25A
Operating Temperature -:
-55℃~+150℃
RDS(on):
20mΩ@10V;27mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
158pF
Number:
1 P-Channel
Output Capacitance(Coss):
170pF
Pd - Power Dissipation:
25W
Input Capacitance(Ciss):
1.223nF
Gate Charge(Qg):
24.2nC@10V
Mfr. Part #:
SP30P20TH
Package:
TO-252-2L
Product Description
Product Overview
The SP30P20TH is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for applications such as DC-DC converters and load switching. This device has undergone 100% single pulse avalanche energy testing and is available in a TO-252 package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: P-Channel MOSFET
- Device Code: SP30P20TH
- Package: TO-252
- Marking: 30P20
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -30 | V | |||
| RDS(on) Typ | -10V | 20 | m | |||
| RDS(on) Typ | -4.5V | 27 | m | |||
| Continuous Drain Current | ID | -25 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25,unless otherwise noted) | -30 | V | ||
| Gate-Source Voltage | VGS | 12 | V | |||
| Continuous Drain Current | ID | (TC=25) | -25 | A | ||
| Continuous Drain Current | ID | (TC=100) | -17 | A | ||
| Pulsed Drain Current | IDM | -100 | A | |||
| Single Pulse Avalanche Energy | EAS | 1 | 110 | mJ | ||
| Power Dissipation | PD | (TC=25) | 25 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 5 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -30 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-24V , VGS=0V , TJ=25 | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.0 | -1.5 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-20A | 20 | 25 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-15A | 27 | 36 | m | |
| Input Capacitance | Ciss | VDS=-15V , VGS=0V , f=1MHz | 1223 | pF | ||
| Output Capacitance | Coss | 170 | pF | |||
| Reverse Transfer Capacitance | Crss | 158 | pF | |||
| Total Gate Charge | Qg | VDS=-15V , VGS=-10V , ID=-6A | 24.2 | nC | ||
| Gate-Source Charge | Qgs | 2.2 | nC | |||
| Gate-Drain Charge | Qgd | 6.1 | nC | |||
| Turn-On Delay Time | Td(on) | VDD=-15V,VGS=-10V,RG=3, ID=-6A | 11 | nS | ||
| Rise Time | Tr | 4.8 | nS | |||
| Turn-Off Delay Time | Td(off) | 72 | nS | |||
| Fall Time | Tf | 51 | nS | |||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | 1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | -25 | A | |||
| Reverse Recovery Time | Trr | IS=-5A, di/dt=100A/us, TJ=25 | 11 | nS | ||
| Reverse Recovery Charge | Qrr | 23 | nC | |||
| Package Information (TO-252) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 2.200 | 2.400 | 0.087 | 0.094 | ||
| A1 | 0.000 | 0.127 | 0.000 | 0.005 | ||
| b | 0.660 | 0.860 | 0.026 | 0.034 | ||
| c | 0.460 | 0.580 | 0.018 | 0.023 | ||
| D | 6.500 | 6.700 | 0.256 | 0.264 | ||
| D1 | 5.100 | 5.460 | 0.201 | 0.215 | ||
| D2 | 4.830 REF. | 0.190 REF. | ||||
| E | 6.000 | 6.200 | 0.236 | 0.244 | ||
| e | 2.186 | 2.386 | 0.086 | 0.094 | ||
| L | 9.800 | 10.400 | 0.386 | 0.409 | ||
| L1 | 2.900 REF. | 0.114 REF. | ||||
| L2 | 1.400 | 1.700 | 0.055 | 0.067 | ||
| L3 | 1.600 REF. | 0.063 REF. | ||||
| L4 | 0.600 | 1.000 | 0.024 | 0.039 | ||
| 1.100 | 1.300 | 0.043 | 0.051 | |||
| 0 | 8 | 0 | 8 | |||
| h | 0.000 | 0.300 | 0.000 | 0.012 | ||
| V | 5.350 REF. | 0.211 REF. | ||||
2504101957_Siliup-SP30P20TH_C41355029.pdf
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