Surface Mount SOT 23 Package Siliup BSS84K 60V P Channel MOSFET with High Current Handling and ESD Protection
Key Attributes
Model Number:
BSS84K
Product Custom Attributes
Pd - Power Dissipation:
350mW
Drain To Source Voltage:
60V
Configuration:
-
Current - Continuous Drain(Id):
130mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.2Ω@10V;4.5Ω@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Number:
1 P-Channel
Output Capacitance(Coss):
10pF
Input Capacitance(Ciss):
30pF
Gate Charge(Qg):
1.8nC@10V
Mfr. Part #:
BSS84K
Package:
SOT-23
Product Description
Product Overview
The BSS84K is a 60V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface-mount device offers ESD protection up to 2KV. It is suitable for applications such as battery switches and DC/DC converters.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: BSS84K
- Package Type: SOT-23
- ESD Protection: 2KV
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -60 | V | |||
| Static Drain-Source On-Resistance | RDS(on) | @-10V | 4.2 | |||
| Static Drain-Source On-Resistance | RDS(on) | @-4.5V | 4.5 | |||
| Continuous Drain Current | ID | -130 | mA | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | -60 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current | ID | -130 | mA | |||
| Pulse Drain Current | IDM | Tested | -520 | mA | ||
| Power Dissipation | PD | 350 | mW | |||
| Thermal Resistance Junction-to-Ambient | RJA | 357 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250A | -60 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=-48V , VGS=0V | - | - | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 10 | uA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=-250A | -0.8 | -1.5 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =-10V, ID =-150mA | - | 4.2 | 6 | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =-4.5V, ID =-150mA | - | 4.5 | 7 | |
| Input Capacitance | Ciss | VDS=-5V , VGS=0V , f=1MHz | - | 30 | - | pF |
| Output Capacitance | Coss | - | 10 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 5 | - | pF | |
| Total Gate Charge | Qg | VDS=-30V , VGS=-10V , ID=-0.15A | - | 1.8 | - | nC |
| Gate-Source Charge | Qgs | - | 0.5 | - | ||
| Gate-Drain Charge | Qgd | - | 0.18 | - | ||
| Turn-On Delay Time | td(on) | VDD=-15V VGS=-10V , RG=50, ID=-0.15A | - | 8.6 | - | nS |
| Turn-On Rise Time | tr | - | 20 | - | ||
| Turn-Off Delay Time | td(off) | - | 14 | - | ||
| Turn-Off Fall Time | tf | - | 77 | - | ||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | - | - | -1.2 | V |
| Package Information (SOT-23) | ||||||
| Dimension A | 0.90 | 1.15 | mm | |||
| Dimension A1 | 0.00 | 0.10 | mm | |||
| Dimension A2 | 0.90 | 1.05 | mm | |||
| Dimension b | 0.30 | 0.50 | mm | |||
| Dimension c | 0.08 | 0.15 | mm | |||
| Dimension D | 2.80 | 3.00 | mm | |||
| Dimension E | 1.20 | 1.40 | mm | |||
| Dimension E1 | 2.25 | 2.55 | mm | |||
| Dimension e | REF. | 0.95 | ||||
| Dimension e1 | 1.80 | 2.00 | mm | |||
| Dimension L | REF. | 0.55 | ||||
| Dimension L1 | 0.30 | 0.50 | mm | |||
| Dimension | 0 | 8 | ||||
2504101957_Siliup-BSS84K_C41354934.pdf
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