switching device Siliup SP025N18GHTF 250V N-Channel MOSFET designed for PWM and power management systems
Key Attributes
Model Number:
SP025N18GHTF
Product Custom Attributes
Drain To Source Voltage:
250V
Current - Continuous Drain(Id):
75A
RDS(on):
18mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
18pF
Number:
1 N-channel
Output Capacitance(Coss):
290pF
Input Capacitance(Ciss):
9.824nF
Pd - Power Dissipation:
310W
Gate Charge(Qg):
70nC@10V
Mfr. Part #:
SP025N18GHTF
Package:
TO-247
Product Description
Product Overview
The SP025N18GHTF is a 250V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), enabled by advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy, making it suitable for PWM applications, hard switched and high frequency circuits, and power management systems.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 025N18GH
- Package: TO-247
- Technology: Advanced Split Gate Trench Technology
- Channel Type: N-Channel
Technical Specifications
| Parameter | Symbol | Test Condition | Rating | Unit |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 250 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current (Tc=25) | ID | 75 | A | |
| Continuous Drain Current (Tc=100) | ID | 50 | A | |
| Pulsed Drain Current | IDM | 300 | A | |
| Single Pulse Avalanche Energy | EAS | 841 | mJ | |
| Power Dissipation (Tc=25) | PD | 310 | W | |
| Thermal Resistance Junction-to-Case | RθJC | 0.4 | /W | |
| Storage Temperature Range | TSTG | -55 to 150 | ||
| Operating Junction Temperature Range | TJ | -55 to 150 | ||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250µA | 250 | V |
| Drain Cut-Off Current | IDSS | VDS=200V , VGS=0V , TJ=25 | - | 1 µA |
| Gate Leakage Current | IGSS | VGS=±20V , VDS=0V | - | ±100 nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250µA | 2.5 - 4.5 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS=10V , ID=20A | - 18 - 23 | mΩ |
| Input Capacitance | Ciss | VDS=125V , VGS=0V , f=1MHz | - 9824 - | pF |
| Output Capacitance | Coss | - 290 - | pF | |
| Reverse Transfer Capacitance | Crss | - 18 - | pF | |
| Total Gate Charge | Qg | VDS=125V , VGS=10V , ID=20A | - 70 - | nC |
| Gate-Source Charge | Qgs | - 24 - | nC | |
| Gate-Drain Charge | Qgd | - 22 - | nC | |
| Turn-On Delay Time | td(on) | VDD=125V , VGS=10V , RG=10Ω ID=20A | - 33 - | nS |
| Rise Time | tr | - 15 - | nS | |
| Turn-Off Delay Time | td(off) | - 61 - | nS | |
| Fall Time | tf | - 8 - | nS | |
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - - 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - - 75 | A | |
| Reverse Recovery Time | trr | IS=20A, di/dt=200A/us, TJ=25 | - 168 - | nS |
| Reverse Recovery Charge | Qrr | - 795 - | nC |
Package Information (TO-247)
| Symbol | Dimensions In Millimeters | Dimensions In Inches |
|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 4.850 | 5.150 | 0.191 | 0.200 |
| A1 | 2.200 | 2.600 | 0.087 | 0.102 |
| b | 1.000 | 1.400 | 0.039 | 0.055 |
| b1 | 2.800 | 3.200 | 0.110 | 0.126 |
| b2 | 1.800 | 2.200 | 0.071 | 0.087 |
| c | 0.500 | 0.700 | 0.020 | 0.028 |
| c1 | 1.900 | 2.100 | 0.075 | 0.083 |
| D | 15.450 | 15.750 | 0.608 | 0.620 |
| E1 | 3.500 REF. | 0.138 REF. |
| E2 | 3.600 REF. | 0.142 REF. |
| L | 40.900 | 41.300 | 1.610 | 1.626 |
| L1 | 24.800 | 25.100 | 0.976 | 0.988 |
| L2 | 20.300 | 20.600 | 0.799 | 0.811 |
| Φ | 7.100 | 7.300 | 0.280 | 0.287 |
| e | 5.450 TYP. | 0.215 TYP. |
| H | 5.980 REF. | 0.235 REF. |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
2504101957_Siliup-SP025N18GHTF_C22466820.pdf
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