SP2036CP8 20V Complimentary MOSFET Offering Low On Resistance and Low Input Capacitance for Circuits
Key Attributes
Model Number:
SP2036CP8
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
90mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
125pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
155pF
Input Capacitance(Ciss):
800pF
Gate Charge(Qg):
12nC@2.5V
Mfr. Part #:
SP2036CP8
Package:
SOP-8L
Product Description
Product Overview
The SP2036CP8 is a 20V complimentary MOSFET designed by Shanghai Siliup Semiconductor Technology Co. Ltd. This device offers low on-resistance, low input capacitance, and fast switching speeds, making it suitable for applications such as motor control, power management functions, and DC-DC converters. It also features low input/output leakage and is available in an SOP-8L package.
Product Attributes
- Brand: Shanghai Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP2036CP8
- Type: 20V Complimentary MOSFET
- Package: SOP-8L
- Marking: 2036C ** (** denotes Week code)
Technical Specifications
| SP2036CP8 20V Complimentary MOSFET | |||
|---|---|---|---|
| Parameter | N-Channel Q1 (Typ.) | P-Channel Q2 (Typ.) | Unit |
| Product Summary | |||
| V(BR)DSS | 20V | -20V | |
| RDS(on)@4.5V | 22m | 50m | |
| RDS(on)@2.5V | 30m | 70m | |
| ID@4.5V | 6A | -5A | |
| ID@2.5V | - | - | |
| Maximum Ratings - Total Device (Ta=25) | |||
| Storage Temperature (TSTG) | -55~ +150 | ||
| Maximum Ratings - N-Channel Q1 (Ta=25) | |||
| Drain-Source Voltage (VDS) | 20 | V | |
| Gate-Source Voltage (VGS) | 12 | V | |
| Continuous Drain Current (ID) | 6 | A | |
| Maximum Ratings - P-Channel Q1 (Ta=25) | |||
| Drain-Source Voltage (VDS) | -20 | V | |
| Gate-Source Voltage (VGS) | 12 | V | |
| Continuous Drain Current (ID) | -5 | A | |
| Thermal Characteristics | |||
| Thermal Resistance Junction to Ambient (RJA) | 277 | /W | |
| Electrical Characteristics - N-Channel Q1 (TA=25) | |||
| Drain-source breakdown voltage (V(BR)DSS) | 20 | V | |
| Zero gate voltage drain current (IDSS) | 1 | A | |
| Gate-body leakage current (IGSS) | 0.1 | A | |
| Gate threshold voltage (VGS(th)) | 0.5 - 1 | V | |
| Drain-source on-resistance (RDS(on)) VGS=4.5V, ID=4A | 22 - 30 | m | |
| Drain-source on-resistance (RDS(on)) VGS=2.5V, ID=3A | 30 - 40 | m | |
| Total gate charge (Qg) | 11 | nC | |
| Gate-source charge (Qgs) | 2.3 | ||
| Gate-drain charge (Qgd) | 2.5 | ||
| Input Capacitance (Ciss) | 800 | pF | |
| Output Capacitance (Coss) | 155 | pF | |
| Reverse Transfer Capacitance (Crss) | 125 | pF | |
| Turn-on delay time (td(on)) | 18 | ns | |
| Turn-on rise time (tr) | 5 | ns | |
| Turn-off delay time (td(off)) | 43 | ns | |
| Turn-off fall time (tf) | 20 | ns | |
| Source-Drain Diode Characteristics - N-Channel Q1 | |||
| Diode forward voltage (VSD) IS=1A,VGS=0V | 1.3 | V | |
| Electrical Characteristics - P-Channel Q2 (TA=25) | |||
| Drain-source breakdown voltage (V(BR)DSS) | -20 | V | |
| Zero gate voltage drain current (IDSS) | -1 | A | |
| Gate-body leakage current (IGSS) | 100 | nA | |
| Gate threshold voltage (VGS(th)) | -0.5 - -1 | V | |
| Drain-source on-resistance (RDS(on)) VGS=-4.5V, ID=-3A | 50 - 60 | m | |
| Drain-source on-resistance (RDS(on)) VGS=-2.5V, ID=-1A | 70 - 90 | m | |
| Input Capacitance (Ciss) | 405 | pF | |
| Output Capacitance (Coss) | 75 | pF | |
| Reverse Transfer Capacitance (Crss) | 55 | pF | |
| Gate resistance (Rg) | 6 | ||
| Total Gate Charge (Qg) | 3.3 - 12 | nC | |
| Gate-Source Charge (Qgs) | 0.7 | ||
| Gate-Drain Charge (Qgd) | 1.3 | ||
| Turn-on delay time (td(on)) | 11 | ns | |
| Turn-on rise time (tr) | 35 | ns | |
| Turn-off delay time (td(off)) | 30 | ns | |
| Turn-off fall time (tf) | 10 | ns | |
| Source-Drain Diode Characteristics - P-Channel Q2 | |||
| Diode Forward voltage (VSD) VGS=0V, IS=-1A | -1.3 | V | |
| SOP-8L Package Information | |||
| Symbol | Dimensions In Millimeters | ||
| A | 1.35 - 1.75 | ||
| A1 | 0.10 - 0.25 | ||
| A2 | 1.35 - 1.55 | ||
| b | 0.33 - 0.51 | ||
| c | 0.17 - 0.25 | ||
| D | 4.80 - 5.00 | ||
| e | 1.27 REF. | ||
| E | 5.80 - 6.20 | ||
| E1 | 3.80 - 4.00 | ||
| L | 0.40 - 1.27 | ||
| 0 - 8 | |||
2410121615_Siliup-SP2036CP8_C22385398.pdf
Related Products
Small signal Zener diode YANGJIE MMSZ5229BQ epoxy UL94 V0 flammability rating with tin leads
Product OverviewThe MMSZ5221BQ THRU MMSZ5261BQ series are small signal Zener diodes designed for general regulation functions. These diodes feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. They offer Zener voltages ranging from 2.4V to ...
Glass passivated bridge rectifier YONGYUTAI KBP310G offering 3 amp forward current and molded plastic construction
GLASS PASSIVATED BRIDGE RECTIFIERSIdeal for printed circuit board applications, these bridge rectifiers offer reliable, low-cost construction utilizing molded plastic techniques. The plastic material has a UL flammability classification of 94V-0. They are rated for reverse voltages from 50 to 1000V ...
Zener diode YANGJIE BZX584B15VQ with 15 volt Zener voltage and 2 percent tolerance in compact SOD523 package
Product OverviewThe BZX584B3V6Q thru BZX584B36VQ series are small signal Zener diodes designed for general regulation functions. They feature an epoxy case that meets UL-94 V-0 flammability rating and is halogen-free, with Moisture Sensitivity Level 1. These diodes offer Zener voltages ranging from ...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
